Organic photoelectric transistor and preparation method thereof

A phototransistor and organic technology, applied in the field of organic phototransistor and its preparation, can solve the problem of narrow spectral response range of the device, achieve excellent near-infrared spectral absorption characteristics, improve response performance, and improve stability

Active Publication Date: 2018-11-13
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although some progress has been made in this field at home and abroad, problems are still outstanding. One of the problems is that the spectral response range of the device is narrow, mainly in ultraviolet and visible light, and less in the infrared region.

Method used

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  • Organic photoelectric transistor and preparation method thereof
  • Organic photoelectric transistor and preparation method thereof
  • Organic photoelectric transistor and preparation method thereof

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preparation example Construction

[0044] The present invention also provides a method for preparing the above-mentioned organic phototransistor, comprising the following steps:

[0045] 1) Vacuum evaporation of gold electrodes on the insulating layer of the silicon base layer to obtain a silicon base plated with gold electrodes;

[0046] 2) ultrasonically treating the metallic zinc titanocyanine formic acid dispersion liquid onto one side of the silicon substrate coated with a gold electrode to obtain a silicon substrate carrying the dispersion liquid;

[0047] 3) annealing the silicon substrate loaded with the dispersion liquid to obtain an organic phototransistor.

[0048] In the invention, gold is used as a gold source, and a gold electrode is vacuum-evaporated on an insulating layer of a silicon base layer to obtain a silicon base plated with a gold electrode. In the present invention, the vacuum evaporation preferably includes sequentially cleaning and vacuum drying the silicon substrate.

[0049]In the...

Embodiment 1

[0069] 1) A silicon substrate (Si / SiO) with an area of ​​2cm×2cm 2 ) into deionized water containing a semiconductor cleaning agent, ultrasonically cleaned at room temperature for 10 minutes, taken out and dried; then placed in absolute ethanol, ultrasonically cleaned at room temperature for 10 minutes, taken out and dried; then placed in isopropanol , ultrasonic cleaning at room temperature for 10 min, take out to dry; then place in acetone, ultrasonic cleaning at room temperature for 10 min, take out with N 2 Blow dry; finally put it into a vacuum drying oven, vacuum dry at 120° C. overnight, and set aside.

[0070] 2) The cleaned silicon substrate (Si / SiO 2 ) placed on the substrate stage of the vacuum evaporation apparatus (Mbraun MB200), and the vacuum degree of the control chamber is not lower than 5×10 -6 mbar, with high-purity gold (99.999%) as the gold source, with A gold electrode was evaporated on the insulating layer of the silicon substrate, and the thickness ...

Embodiment 2

[0097] 1) A silicon substrate (Si / SiO) with an area of ​​2cm×2cm 2 ) into deionized water containing a semiconductor cleaning agent, ultrasonically cleaned at room temperature for 10 minutes, taken out and dried; then placed in absolute ethanol, ultrasonically cleaned at room temperature for 10 minutes, taken out and dried; then placed in isopropanol , ultrasonic cleaning at room temperature for 10 min, take out to dry; then place in acetone, ultrasonic cleaning at room temperature for 10 min, take out with N 2 Blow dry; finally put it into a vacuum drying oven, vacuum dry at 120° C. overnight, and set aside.

[0098] 2) The cleaned silicon substrate (Si / SiO 2 ) placed on the substrate stage of the vacuum evaporation apparatus (Mbraun MB200), and the vacuum degree of the control chamber is not lower than 5×10 -6 mbar, with high-purity gold (99.999%) as the gold source, with A gold electrode was evaporated on the insulating layer of the silicon substrate, and the thickness ...

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Abstract

The invention provides an organic photoelectric transistor, which belongs to the technical field of a semiconductor material. The organic photoelectric transistor successively comprises a silicon substrate layer, gold electrodes and a metal zinc phthalocyanine nano crystal active layer; wherein the metal zinc phthalocyanine nano crystal active layer covers the gold electrodes and an area between the gold electrodes. The metal zinc phthalocyanine nano crystal active layer in the transistor provided by the invention has excellent near-infrared spectral absorption characteristics, so that the response performance of the photosensitive transistor for near-infrared spectrum can be improved; the metal zinc phthalocyanine nano crystal is prepared by adopting an ultrasonic technology, and the crystal defect density is low, so that the adsorption of molecules such as O2, H2O and CO2 in the air in the photosensitive transistor active layer can be effectively reduced, and the stability of a device in an atmosphere environment can be improved; and meanwhile, the field effect carrier migration rate is excellent, so that the optical response of the photosensitive transistor can be effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to an organic phototransistor and a preparation method thereof. Background technique [0002] Photodetector is a device that can directly convert optical signals into electrical signals. It is an important electronic component in the fields of optical switches, optical trigger amplification, and optical detection circuits. The application fields mainly include: image sensing technology, night surveillance, night vision technology, environmental monitoring, remote control, chemical / biological sensing technology, spectroscopy and medical equipment, etc. At present, commercial photodetectors mainly use crystalline silicon and silicon-germanium heterojunction or III-V semiconductor alloy bulk materials, which can respectively realize visible light-near-infrared light band (λ<1100nm) and infrared light band (λ> 1100nm) light detection. However, these photodetector...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44
CPCH10K30/81H10K30/00Y02E10/549Y02P70/50
Inventor 许宗祥许家驹胡启锟
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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