A kind of organic phototransistor and preparation method thereof

A phototransistor and organic technology, which is applied in the field of organic phototransistor and its preparation, can solve the problem of narrow spectral response range of the device, achieve excellent near-infrared spectrum absorption characteristics, improve stability, and reduce crystal defect density.

Active Publication Date: 2021-12-24
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although some progress has been made in this field at home and abroad, problems are still outstanding. One of the problems is that the spectral response range of the device is narrow, mainly in ultraviolet and visible light, and less in the infrared region.

Method used

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  • A kind of organic phototransistor and preparation method thereof
  • A kind of organic phototransistor and preparation method thereof
  • A kind of organic phototransistor and preparation method thereof

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preparation example Construction

[0044] The present invention also provides a method for preparing the above-mentioned organic phototransistor, comprising the following steps:

[0045] 1) Vacuum evaporation of gold electrodes on the insulating layer of the silicon base layer to obtain a silicon base plated with gold electrodes;

[0046] 2) Ultrasonic treatment of the metal zinc phthalocyanine formic acid dispersion was applied drop-coated on one side of the silicon substrate coated with gold electrodes to obtain a silicon substrate loaded with the dispersion;

[0047] 3) Annealing the silicon substrate loaded with the dispersion liquid to obtain an organic phototransistor.

[0048] In the invention, gold is used as a gold source, and a gold electrode is vacuum-evaporated on an insulating layer of a silicon base layer to obtain a silicon base plated with a gold electrode. In the present invention, the vacuum evaporation preferably includes sequentially cleaning and vacuum drying the silicon substrate.

[004...

Embodiment 1

[0069] 1) A silicon substrate (Si / SiO 2 ) into deionized water containing semiconductor cleaning agent, ultrasonically cleaned at room temperature for 10 min, taken out to dry; then placed in absolute ethanol, ultrasonically cleaned at room temperature for 10 min, taken out to dry; then placed in iso In propanol, ultrasonic cleaning at room temperature for 10 min, take out to dry; then place in acetone, ultrasonic cleaning at room temperature for 10 min, take out with N 2 Blow dry; finally put it into a vacuum drying oven, vacuum dry at 120° C. overnight, and set aside.

[0070] 2) The cleaned silicon substrate (Si / SiO 2 ) placed on the substrate stage of a vacuum evaporation apparatus (Mbraun MB200), and the vacuum degree of the control chamber is not lower than 5×10 -6 mbar, with high-purity gold (99.999%) as the gold source, gold electrodes were evaporated on the insulating layer of the silicon substrate at a rate of 0.3 Å / s, and the electrode thickness was controlled at...

Embodiment 2

[0097] 1) A silicon substrate (Si / SiO 2 ) into deionized water containing semiconductor cleaning agent, ultrasonically cleaned at room temperature for 10 min, taken out to dry; then placed in absolute ethanol, ultrasonically cleaned at room temperature for 10 min, taken out to dry; then placed in iso In propanol, ultrasonic cleaning at room temperature for 10 min, take out to dry; then place in acetone, ultrasonic cleaning at room temperature for 10 min, take out with N 2 Blow dry; finally put it into a vacuum drying oven, vacuum dry at 120° C. overnight, and set aside.

[0098] 2) The cleaned silicon substrate (Si / SiO 2 ) placed on the substrate stage of a vacuum evaporation apparatus (Mbraun MB200), and the vacuum degree of the control chamber is not lower than 5×10 -6 mbar, with high-purity gold (99.999%) as the gold source, gold electrodes were evaporated on the insulating layer of the silicon substrate at a rate of 0.3 Å / s, and the electrode thickness was controlled at...

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Abstract

The invention provides an organic phototransistor, belonging to the technical field of semiconductor materials, comprising a silicon base layer, a gold electrode, and a metal zinc tilocyanine nanocrystal active layer; the metal zinc tilocyanine nanocrystal active layer covers the gold electrode and above the area between the gold electrodes. The metal zinc phthalocyanine nanocrystal active layer in the transistor provided by the invention has excellent near-infrared spectrum absorption characteristics, thereby improving the response performance of the phototransistor to the near-infrared spectrum; the invention adopts ultrasonic technology to prepare metal phthalocyanine nanocrystals, Its crystal defect density is low, effectively reducing the O in the air 2 、H 2 O.CO 2 The adsorption of such molecules in the active layer of the phototransistor is conducive to improving the stability of the device in the atmospheric environment; at the same time, it has excellent field-effect carrier mobility, thereby effectively improving the photoresponsivity of the phototransistor.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to an organic phototransistor and a preparation method thereof. Background technique [0002] Photodetector is a device that can directly convert optical signals into electrical signals. It is an important electronic component in the fields of optical switches, optical trigger amplification, and optical detection circuits. The application fields mainly include: image sensing technology, night surveillance, night vision technology, environmental monitoring, remote control, chemical / biological sensing technology, spectroscopy and medical equipment, etc. At present, commercial photodetectors mainly use crystalline silicon and silicon-germanium heterojunction or III-V semiconductor alloy bulk materials, which can realize visible light-near-infrared light band (λ<1100 nm) and infrared light band (λ<1100 nm) respectively. > 1100 nm) for light detection. However,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44
CPCH10K30/81H10K30/00Y02E10/549Y02P70/50
Inventor 许宗祥许家驹胡启锟
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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