GaN-based semiconductor light-emitting diode and manufacture method thereof

Abstract

The invention provides a manufacture method of a GaN-based semiconductor light-emitting diode. The manufacture method includes the steps of forming of a GaN substrate and deposition of a p-type contact layer, an active layer, an n-type electronic barrier layer, an n-type transition layer and an n-type contact layer on the GaN substrate, wherein forming of the GaN substrate includes the steps: placing a GaN wafer into a high-temperature and high-pressure device at the normal temperature and under the normal pressure; heating and pressurizing the GaN wafer simultaneously for 10-15 minutes, wherein the heating temperature is 820-880 DEG C, and the pressurizing pressure is 4.1-4.6GPa; stopping heating to enable the GaN wafer to be cooled to the normal temperature; slowly releasing pressure to enable the GaN wafer to be recovered to the normal pressure; and taking the GaN wafer out after annealing in the high-temperature and high-pressure device for 20-30minutes. By the manufacture method, crystal defect density in a light-emitting diode substrate can be obviously reduced, the performance of the light-emitting diode is improved, and the service life of the light-emitting diode is prolonged.

Description

technical field [0001] The invention relates to a method for manufacturing a light emitting diode. Background technique [0002] Semiconductor light-emitting diode (LED) is a diode made of compounds such as Ga, N, As, P, etc. It can emit visible light when electrons and holes recombine, and can be used to manufacture light-emitting devices. Due to its simple structure and small size, The working current is small, easy to use, and low cost, and has been widely used in various photoelectric systems. [0003] The semiconductor light emitting diode includes a substrate and a P / N epitaxial layer, an active layer and a P / N epitaxial layer deposited on the substrate in sequence. As the foundation of the LED building, the substrate plays an important role. Sapphire is a commonly used LED substrate, but due to the lattice and thermal stress mismatch between it and the heterogeneous epitaxial layer on it, it will crack due to different expansion degrees after heating, resulting in d...

AI Technical Summary

Problems solved by technology

The above-mentioned semiconductor materials used as substrates generally contain various defects, such as dislocations, gaps or vacancies, etc. The defects will cause crystal strain, and the strain will reduce the quality and performance of the epitaxial layer on the substrate, resulting in a shortened life of the light-emitting diode.

Images