Manufacturing method of GaN substrate laser diode

Abstract

The invention discloses a manufacturing method of a GaN substrate laser diode. The manufacturing method comprises the following steps of: forming a GaN substrate, and sequentially depositing an n type coating layer, an n type light guide layer, an active layer, a p type barrier layer, a p type light guide layer and a p type coating layer, wherein the method for forming the GaN substrate comprises the steps of putting a GaN wafer into a high-temperature and high-pressure device, and pressurizing the GaN wafer when heating the GaN wafer, wherein the heating temperature is 820-880 DEG C, the pressurizing pressure is 4.1-4.6 GPa, and the pressurizing is kept for 10-15min; stopping heating and pressurizing to enable the GaN wafer to restore to constant temperature and constant pressure; and after annealing in the high-temperature and high-pressure device for 20-30min, taking out the GaN wafer. With the adoption of the method, the crystal defect density in the laser diode substrate can be obviously reduced, the performance of the laser diode is improved, and the service life of the laser diode is prolonged.

Description

technical field [0001] The invention relates to a manufacturing method of a laser diode. Background technique [0002] A laser diode (LD) is a diode formed of semiconductor materials, and its basic structure includes a substrate and a P / N cladding layer deposited on the substrate in sequence, an active layer and a P / N cladding layer, and an N Ohmic contacts on the P-type and P-type cladding layers. As the foundation of the building of LD, the substrate plays an important role. Sapphire is a commonly used LD substrate, but due to the lattice and thermal stress mismatch between it and the heterogeneous epitaxial layer on it, it will crack due to different expansion degrees after heating, resulting in device damage. Another type of LD substrate includes GaN, GaAs, InP and other semiconductor materials. The above-mentioned semiconductor materials used as substrates generally contain various defects, such as dislocations, gaps or vacancies, etc. The defects will cause crystal ...

AI Technical Summary

Problems solved by technology

The above-mentioned semiconductor materials used as substrates generally contain various defects, such as dislocations, gaps or vacancies, etc. The defects will cause crystal strain, and the strain will reduce the quality and performance of the epitaxial layer on the substrate, resulting in a shortened life of the laser diode.

Images