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Method for manufacturing p-type GaAs-based laser diode

A technology of laser diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as crystal strain, shortened life of laser diodes, and reduced quality and performance of epitaxial layers on substrates

Inactive Publication Date: 2014-04-23
JIANGSU YOURUN MICROELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above-mentioned semiconductor materials used as substrates generally contain various defects, such as dislocations, gaps or vacancies, etc. The defects will cause crystal strain, and the strain will reduce the quality and performance of the epitaxial layer on the substrate, resulting in a shortened life of the laser diode.

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  • Method for manufacturing p-type GaAs-based laser diode

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Embodiment Construction

[0016] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0017] figure 1 A schematic diagram of the structure of the laser diode of the present invention is shown. It includes a p-GaAs substrate 1, on which a p-type cladding layer 2, a p-type optical guide layer 3 and an active layer 4 are deposited in sequence.

[0018] P-type cladding layer 2 is p-Al a In b Ga 1-a-b N, p-type optical guide layer 3 is p-Al c In d Ga 1-c-d N, where 0≤a, b, c, d, a+b, c+d≤1.

[0019] Cladding layer 2 can also be p-Al a In b Ga 1-a-b N super character.

[0020] Active layer 4 is p-Al with superlattice structure e In f Ga 1-e-f N / p-AI g In h Ga 1-g-h N multiple quantum well layers, where 0≤e, f, g, h, e+f, g+h≤1.

[0021] An n-type barrier layer 5 is also deposited on the active layer 4, and the n-type barrier layer 5 is n-Al i In j Ga 1-i-j N, on ...

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Abstract

The invention discloses a method for manufacturing a p-type GaAs-based laser diode. The method comprises the following steps: forming a GaAs substrate, and depositing a p-type coating layer, a p-type photoconductive layer, an active layer, an n-type barrier layer, an n-type photoconductive layer and an n-type coating layer in sequence. A method for forming the GaAs substrate comprises the following steps: putting a GaAs wafer in a high-temperature and high-pressure device; pressurizing while heating the GaAs wafer for 10-15 minutes at the heating temperature of 860-890 DEG C and the pressurizing pressure of 5.0-5.5GPa; ending heating and pressurizing so as to recover the GaAs wafer to the normal temperature and normal pressure; annealing for 20-30 minutes in the high-temperature and high-pressure device, and then, taking out the GaAs wafer. According to the method, the crystal defect density in the substrate of the light emitting diode can be obviously reduced, the performance of the laser diode is improved, and the service life of the laser diode is prolonged.

Description

technical field [0001] The invention relates to a manufacturing method of a laser diode. Background technique [0002] A laser diode is a diode formed of semiconductor materials, and its basic structure includes a substrate and a P / N cladding layer deposited on the substrate in sequence, an active layer and a P / N cladding layer, and an N-type and a P cladding layer. Ohmic contact on the type cladding layer, where the substrate plays an important role in the performance of the laser diode. Sapphire is a commonly used substrate, but due to the mismatch of quality and thermal stress with the heterogeneous epitaxial layer on it, it will crack due to different expansion degrees after heating, resulting in device damage. Another type of substrate includes GaN, GaAs, InP and other semiconductor materials. The above-mentioned semiconductor materials used as substrates generally contain various defects, such as dislocations, gaps or vacancies, etc. The defects will cause crystal st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/0062H01L33/0095
Inventor 周明申云顾理建张兴杰
Owner JIANGSU YOURUN MICROELECTRONICS CO LTD
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