Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High quality non-polar/semi-polar semiconductor element on tilt substrate and fabrication method thereof

A semiconductor, non-polar technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of insufficient crystal defects of optical devices, degradation of brightness and reliability of optical devices, etc., achieve low crystal defect density, improve reliability and performance effect

Inactive Publication Date: 2012-07-04
SEOUL VIOSYS CO LTD
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this is not enough to address crystal defects in optics
Therefore, there is a need to solve the problem of deteriorating brightness and reliability of optical devices due to crystal defects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High quality non-polar/semi-polar semiconductor element on tilt substrate and fabrication method thereof
  • High quality non-polar/semi-polar semiconductor element on tilt substrate and fabrication method thereof
  • High quality non-polar/semi-polar semiconductor element on tilt substrate and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Throughout the drawings and specification, the same reference numerals will be used to refer to the same elements.

[0023] figure 1 The sapphire crystal structure for illustrating the crystal planes of the sapphire substrate is shown.

[0024] Generally, if a nitride semiconductor such as polar GaN is grown on a sapphire substrate using a C plane (eg (0001) plane) as a sapphire crystal plane, as figure 1 As shown, the piezoelectric effect caused by the formation of the polarization field will reduce the internal quantum efficiency.

[0025] I...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a high quality non-polar / semi-polar semiconductor element and a fabrication method thereof, wherein a nitride semiconductor crystal is formed on a sapphire crystal plane that enables the growth of a non-polar / semi-polar nitride semiconductor layer to eliminate an piezoelectric effect; and a template layer is formed on a corresponding off-axis of the sapphire crystal plane tilted in a predetermined direction to reduce the defect density of the semiconductor element and improves the internal quantum efficiency and extraction efficiency. In the fabrication method of a semiconductor element by forming a template layer and a semiconductor element structure on the sapphire substrate having a crystal plane for the growth of a non-polar or semi-polar nitride semiconductor layer, the sapphire substrate is a substrate having the crystal plane tilted in a predetermined direction, and a nitride semiconductor layer and the template layer comprising a GaN layer are formed on the tilt substrate.

Description

technical field [0001] The present invention relates to a semiconductor optical device and its manufacturing method, more specifically, to a high-quality nonpolar / semipolar semiconductor device and its manufacturing method. In the high-quality nonpolar / semipolar semiconductor device, the nonpolar / semipolar nitride semiconductor crystal is formed on the sapphire crystal plane capable of growing the nonpolar / semipolar nitride semiconductor layer, thereby The piezoelectric effect generated in the polar nitride semiconductor layer does not occur in the nitride semiconductor layer. In addition, a template layer is formed on a corresponding off-axis of a sapphire crystal plane inclined in a predetermined direction to reduce a defect density of a semiconductor device and improve internal quantum efficiency and light extraction efficiency thereof. Background technique [0002] Since group III-V nitride semiconductors such as GaN (also simply referred to as "nitride semiconductors")...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02
CPCH01L33/007H01L33/32H01L33/16
Inventor 南玉铉张钟珍
Owner SEOUL VIOSYS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com