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76 results about "Active resistance" patented technology

Nanometer coating used for preventing icing of high tension transmission line and application thereof

The invention relates to a nanometer coating used for preventing icing of a high tension transmission line and application thereof. The nanometer coating is prepared through the following steps: weighing, by weight, 10 to 15% of a high-molecular resin, 20 to 25% of titanium dioxide, 30 to 35% of silica, 3 to 5% of diamond-like carbon and 19 to 32% of a solvent; then compounding and uniformly mixing the high-molecular resin, titanium dioxide, silica and diamond-like carbon and carrying out grinding to obtain a particle with a particle size of 1 to 100 nm; and finally, adding the raw materials uniformly mixed and ground into the solvent and carrying out full stirring so as to obtain the nanometer coating used for preventing icing of the high tension transmission line. The coating provided by the invention allows the high tension transmission line to have the advantages of fouling resistance, icing resistance, high wear resistance and the like, provides a long-acting, high-efficiency, convenient, economic and feasible approach for active resistance to ice and snow disasters, realizes delaying and prevention of icing of super-cooled droplets on the high tension transmission line and enables no icing or little icing to be generated on the high tension transmission line in snowy weather.
Owner:STATE GRID CORP OF CHINA +2

Automatic frequency tuning circuit of active resistance-capacitance (RC) filter

The invention discloses an automatic frequency tuning circuit of an active RC filter. The automatic frequency tuning circuit comprises comparators, a constant current source, a reference voltage generating circuit, a switched capacitor circuit and a digital logic control circuit. The automatic frequency tuning circuit is characterized in that the reference voltage generating circuit generates first reference voltage, second reference voltage and third reference voltage which are input to the first comparator, an operational amplifier and the second comparator respectively, voltage generated by the constant current source on the switched capacitor circuit is input to the operational amplifier, and the digital logic control circuit receives signals output by the first comparator and the second comparator, conducts operation treatment, outputs control codes to the switched capacitor circuit and adjusts the equivalent capacitance of the switched capacitor circuit. The automatic frequency tuning circuit is simple in implementation method, low in cost, small in volume, low in power consumption, high in tuning precision, good in application prospect and capable of being widely used in fields such as electronics and communication.
Owner:CHONGQING SOUTHWEST INTEGRATED CIRCUIT DESIGN

Differential active inductor with tunable high Q value

The invention provides a differential active inductor with a tunable high Q value, and relates to the technical field of radio frequency integrated circuits. The problem that an existing differential active inductor is large in real part loss and not high in Q value is solved. The tunable differential active inductor comprises a power source, an input and output end, a biasing circuit and a differential Cascode basic structure, and further comprises an active resistance feedback network. The active resistance feedback network is formed by connecting a passive resistor Rf and a PMOS transistor Mp3 in parallel, and the two ends of the active resistance feedback network are connected with the drain electrodes of a transistor Mn1 and a transistor Mn2 in the differential Cascode basic structure. The differential Cascode basic structure is composed of the transistor Mn1, the transistor Mn2, a transistor Mn3 and a transistor Mn4, the transistor Mn1 and the transistor Mn2 are connected with the transistor Mn3 and the transistor Mn4 in a cross-coupled pair mode, and the drain electrodes of the transistor Mn3 and the transistor Mn4 are connected with the source electrodes of the transistor Mn1 and the transistor Mn2. According to the differential active inductor with the tunable high Q value, tunability of the inductance value and the Q value of the differential active inductor can be achieved by tuning of the active resistance feedback network and the biasing circuit.
Owner:BEIJING UNIV OF TECH

Hydraulic support linear displacement transducer detection device and detection method

The invention relates to a hydraulic bracket linear displacement sensor detection device and a detection method. The linear displacement sensor detection device comprises an excitation mechanism and a displacement sensor detection body. The excitation mechanism comprises an extrusion magnetic horizontal excitation unit and a horizontal magnet-leakage resistance vertical extrusion magnetic unit. The displacement sensor detection body comprises a constant current source circuit, a reed tube detection circuit and a signal filter circuit. In the detection method of the sensor of the invention, the displacement value is converted into the change of the resistance value which is realized by a principle that the reed tube is conductive under a certain magnetic field strength; the constant current source drives the current to generate the voltage reduction at a load resistor; that the displacement value and the detected voltage form a linear relation so as to carry out the detection is realized by detecting the voltages at two ends of the load resistor. The linear displacement sensor of the invention has high detection sensitiveness and high measurement precision, and improves the anti-vibration performance of the linear displacement sensor of the invention by an active resistance low pass network.
Owner:HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL

OLED display panel and preparation method thereof

The invention provides an OLED display panel. The OLED display panel comprises a display device plate and a cofferdam; the cofferdam is arranged around a display area on the display device plate and is located at a non-display area; the OLED display panel further comprises an organic buffer layer covering the display area and a first inorganic layer covering the organic buffer layer and the cofferdam; the organic buffer layer is located on the inner side of the cofferdam, and the edge of the organic buffer layer is in contact with the inner side of the cofferdam. Beneficial effects are as follows: the surface of the cofferdam is treated by using plasma; under the oxidation action of the plasma, a hardened layer between organic silicon and inorganic silicon is formed on the surface of the weir body; active resistance to water and oxygen invasion of the side surface of the OLED display panel is facilitated, meanwhile, the plasma treated hardened layer can effectively promote the adhesionstrength of the inorganic layer and the cofferdam, and the risk of debonding and cracking at the edge of the first inorganic layer and the edge of the organic buffer layer in the bending process of the OLED display panel is reduced.
Owner:WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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