The invention relates to a
simulation method for the influence of a
radiation environment on the
signal transmission characteristics of a
microsystem device, and the method comprises the following steps: S1, constructing a three-dimensional model of the
microsystem device, and splitting the three-dimensional model into independent grid files according to the types of materials; s2, setting a
particle type, energy and an incident region in Geant4, simulating particle bombardment, and outputting single-particle energy deposition data, energy deposition distribution and
linear energy transfer (LET) data; s3, establishing a material damage model in
MATLAB, and calculating the post-
radiation conductivity sigma (t) and relative
dielectric constant epsilon r based on particle and substance action
mechanism analysis; and S4, updating the material parameters calculated in the step S3 to a device model in the
HFSS, simulating a
signal transmission characteristic curve in a
radiation environment, and analyzing an influence mechanism of radiation on
signal transmission. The
electrical performance of the micro-
system device can be accurately evaluated in different radiation environments, a scientific basis is provided for design and optimization of the micro-
system device in a high-radiation environment, and the anti-radiation capability and reliability of the device are effectively improved.