This invention belongs to the field of antibiotic detection technology. It relates to a photoelectric active material with a P-N
covalent bond-bridged
heterojunction, its preparation method, and its applications. The RP / g-C3N4 P-N type chemically bonded
heterojunction photochemical sensing material prepared by this method benefits from the unique band structure
electric field response properties of g-C3N4. Under adjusted bias
voltage conditions, this
heterojunction material excites a dual-channel
photocurrent response at both the
anode and
cathode, forming a self-detecting
signal mechanism. The construction of P-N interface chemical bonds not only provides an efficient directional transport channel for photogenerated electrons but also enhances the
structural stability of the
system through stress buffering. In summary, the synergistic design of the
engineering strategy based on P-N
interface bonding bridging and the single-
system bipolar signal detection mechanism overcomes the detection limitations of traditional single-channel PEC sensors, significantly improving
signal reliability and anti-interference capabilities, and endowing the sensor with wider application adaptability and higher detection confidence.