Column readout circuit for CMOS image sensor

An image sensor and column readout technology, which is applied in image communication, television, electrical components, etc., can solve the problem of limited frame rate, difficulty in realizing wide dynamic range and high frame rate characteristics, and limited single-ended structure column readout circuit, etc. problem, to achieve the effect of increasing speed, increasing the maximum output voltage range, and improving the dynamic range

Active Publication Date: 2018-06-22
ZHEJIANG UNIV
View PDF2 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

(3) The analog-to-digital converter converts the analog output voltage of the programmable gain amplifier into a digital quantity twice successively, and finds the difference between the two to provide to the imaging device. Each pixel signal sampling requires two analog-to-digital conversions Converter transition time, limiting the overall frame rate
To sum up, the single-ended structure column readout circuit is limited by the structure itself, and it is difficult to achieve wide dynamic range and high frame rate characteristics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Column readout circuit for CMOS image sensor
  • Column readout circuit for CMOS image sensor
  • Column readout circuit for CMOS image sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to describe the present invention more specifically, the technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0026] The column readout circuit of the present invention constitutes as image 3 shown by the programmable gain amplifier sampling capacitor C 1 、C 2 、C 3 、C 4 with variable amplification capacitor C 5 、C 6 , fully differential amplifier U 1 with a successive approximation ADC U 2 composition. The key timing waveforms of the readout circuit are as Figure 4 As shown in FIG. 1 , within the conversion time of one line, the single-ended signal output by the pixel point circuit is sampled time-divisionally and block-by-block by the sampling capacitor of the programmable gain amplifier. During the exposure phase, V sig signal and V REFBOT The reference signal is sampled to the side sampling capacitor C 1 、C 2 ; while in the reset phase, V rst s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a column readout circuit for a CMOS image sensor. The circuit comprises a programmable gain amplifier for converting a single-end unipolar signal into a double-end bipolar signal, and a differential input two-step successive approximation analog-to-digital converter (SAR ADC), wherein a pixel point output voltage can be converted into the double-end bipolar signal through the programmable gain amplifier adopting the time-division and block-division sampling technology and the switch capacitor level transition technology, so that a dynamic signal range can be enlarged; and the double-end bipolar analog signal output by the programmable gain amplifier can be converted into a digital signal through the small-area differential input two-step SAR ADC, and the digital signal can be supplied to an imaging device. Therefore, the column readout circuit for the CMOS image sensor has the characteristics that a large dynamic range and a high frame frequency can be achieved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit design, and in particular relates to a column readout circuit applied to a CMOS image sensor. Background technique [0002] With the continuous development of CMOS technology, the application range of CMOS image sensors is becoming more and more extensive because of its low power consumption, simple power supply, high integration, and low cost. With the continuous improvement of imaging quality requirements, the number of pixels and frame frequency of image sensors continue to increase, and higher requirements are placed on the accuracy and speed of the matching readout circuit. Therefore, it is important to improve the dynamic range and conversion frequency of the readout circuit. Technical problems that image sensor technology must solve. Under the existing technical conditions, the readout circuit is divided into a global readout circuit, a column readout circuit and a pixel point r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H04N5/378H04N5/355
CPCH04N25/57H04N25/76H04N25/75
Inventor 李浙鲁何乐年奚剑雄
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products