The invention relates to an optoelectronic device, in particular a µ-LED and / or a µ-
detector, comprising a first
semiconductor layer stack comprising a first layer, a second layer, and a first active region between the first and second
layers, wherein the first and second
layers have different
conductivity types; a second
semiconductor layer stack arranged on top of the first
semiconductor layer stack comprising a third layer, a fourth layer, and a second active region between the third and fourth
layers, wherein the third and fourth layers have different
conductivity types; an
optical layer between the first semiconductor layer stack and the second semiconductor layer stack; a lower
contact element in electrical contact with the first layer; and a middle
contact element in electrical contact with the second and third layers.and an essentially transparent upper
contact element that is in electrical contact with the fourth layer. The first active region has a smaller
band gap than the second active region, and the
optical layer has a higher transparency for light with an energy smaller than the second
band gap and, in particular, greater than or equal to the first
band gap, than for light with an energy equal to or greater than the second band gap.