IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof

A detection device and detection method technology, applied in the direction of measuring devices, thermometers, measuring heat, etc., can solve the problem of inaccurate measurement of IGBT junction temperature, etc., and achieve the effect of accurate junction temperature

Active Publication Date: 2012-08-15
SANY ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no good way to directly measure the junction temperature of the IGBT. Most of them estimate the junction temperature of the IGBT indirectly by measuring the substrate temp

Method used

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  • IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof
  • IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof
  • IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof

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Embodiment Construction

[0054] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0055] see figure 1 , which is a structural diagram of Embodiment 1 of the IGBT junction temperature detection device provided by the present invention.

[0056] The IGBT junction temperature detection device provided in this embodiment includes: a radiator temperature detection unit 101, a current detection unit 102, a frequency detection unit 103, an IGBT junction temperature rise acquisition unit 104, and an addition unit 105;

[0057] The radiator temperature detection unit 101 is used to detect the temperature of the IGBT radiator;

[0058] It should be noted that the radiator temperature detection unit 101 can be implemented by a temperature sensor, preferably, a thermistor can be used as the temperature sensor. The thermistor ...

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PUM

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Abstract

The invention provides an IGBT (insulated gate bipolar transistor) conjunction temperature detection device and a method thereof, wherein the method comprises the following steps of: detecting the switch frequency of an IGBT and the current the IGBT in a conduction state; then calculating the conjunction temperature rise of the IGBT according to a preset model; and then adding the conjunction temperature rise of the IGBT and the temperature of an IGBT heat radiator, and taking the sum of the conjunction temperature rise of the IGBT and the temperature of the IGBT heat radiator as the conjunction temperature of the IGBT, and thus the conjunction temperature of the IGBT can be reflected well. Therefore, the conjunction temperature (obtained by the device and the method) of the IGBT is more accurate than the conjunction temperature (estimated indirectly through detecting the pole plate temperature or the temperature of the heat radiator) of the IGBT in the prior art.

Description

technical field [0001] The invention relates to the technical field of temperature detection, in particular to an IGBT junction temperature detection device and a method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT, Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power transistor composed of a bipolar transistor (BJT, Bipolar Junction Transistor) and an insulated gate field effect transistor (MOS, MetalOxid Semiconductor). Semiconductor devices have both the advantages of high input impedance of MOS and low turn-on voltage drop of giant transistors (GTR, Giant Transistor). [0003] IGBT has the characteristics of easy driving, large peak current capacity, self-shutoff, and high switching frequency (10-40kHz). It is the most rapidly developing new generation of power electronic devices. IGBT is widely used in frequency conversion power supply, speed control motor, uninterruptible power supply and inverter we...

Claims

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Application Information

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IPC IPC(8): G01K13/00G01R31/26
Inventor 刘洋洋陈小佳任晓峰曾赣生
Owner SANY ELECTRIC CO LTD
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