GaN microwave power device junction temperature measurement method
A microwave power and measurement method technology, applied in the direction of single semiconductor device testing, instrumentation, measuring electricity, etc., can solve the problem of inability to obtain the peak junction temperature and temperature distribution of the channel temperature, and avoid measurement errors and true junction temperature extrapolation errors. , the effect of accurate junction temperature
Active Publication Date: 2021-08-31
SHANGHAI PRECISION METROLOGY & TEST RES INST
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[0008] The purpose of the present invention is to provide a method for measuring the junction temperature of gallium nitride microwave power devices to solve the problem that the peak junction temperature and temperature distribution of the channel temperature under the T-shaped metal gate of gallium nitride microwave high-power devices cannot be obtained
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Embodiment 1
[0042] Embodiment 1: A method for determining the junction temperature of a gallium nitride microwave power device, comprising the following steps:
[0043] Step 1, calculate the die heat distribution of the GaN microwave power tube. The structural parameters and material parameters of the device are set in the TCAD software, and the heat distribution in the device is calculated under the specified bias conditions. The calculation process introduces the following physical effects: self-heating effect, electrothermal coupling effect, and inverse piezoelectric effect, and finally obtains the peak junction temperature distribution data of the microwave power tube under specified conditions;
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The invention provides a method for measuring the junction temperature of a gallium nitride microwave power device, comprising the following steps: S1, calculating the heat distribution of the tube core of the gallium nitride microwave power tube; S2, calibrating the temperature of the device substrate and the tube shell; S3, using a micro Raman method is used to measure the temperature of the gallium nitride layer; S4, the thermal reflection imaging method is used to measure the temperature of the gate metal; S5, the finite element analysis method is used to calculate the maximum junction temperature and three-dimensional temperature distribution of the gallium nitride layer. The invention can obtain the highest junction temperature point, channel temperature distribution and three-dimensional temperature distribution of the gallium nitride microwave power device in the working state. The validity of the test data can be verified through the combination of simulation and experimental measurement data, and the measurement error and real junction temperature extrapolation error caused by accidental factors can be avoided as much as possible. The upper and lower boundary conditions are used to calculate and fit the junction of GaN devices. temperature, with the benefit of a more accurate junction temperature.
Description
technical field [0001] The invention relates to the technical field of semiconductor device testing, in particular to a method for measuring the junction temperature of gallium nitride microwave power devices. Background technique [0002] Gallium nitride microwave power device is a new type of wide bandgap device, which has large bandgap width, strong radiation resistance, high output power, high DC-microwave energy conversion efficiency, and is suitable for working in harsh environments such as high temperature and radiation , has a broad application base in aerospace, military and new generation communication fields. In order to better apply gallium nitride microwave power devices, it is necessary to carry out assessment, screening and life evaluation. Among them, the peak junction temperature of the channel is the key parameter, and the maximum junction temperature and temperature distribution of the test channel are used to calculate thermal resistance, set electrical a...
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IPC IPC(8): G01R31/26G06F30/23
CPCG01R31/2603G01R31/2648
Inventor 杜林孔泽斌楼建设冯琦李晓彤狄陆祺
Owner SHANGHAI PRECISION METROLOGY & TEST RES INST
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