A fast and accurate method for measuring junction temperature of cascode structure gan power electronic devices

Abstract

The invention discloses a method for quickly and accurately measuring the junction temperature of a GaN power electronic device with a Cascode structure, belonging to the field of semiconductor device testing. Technical solution: Build a temperature curve calibration platform, calibrate the device temperature curve by means of external heating, measure temperature-sensitive parameters at unknown junction temperatures, and calculate the device junction temperature Tj. Beneficial effects: the Cascode structure GaN power electronic device junction temperature fast and accurate measurement method of the present invention is by applying two bias currents with different sizes at both ends of the source and drain of the device under the off-state condition of the Cascode structure GaN power electronic device, and measuring The bias voltage value, and then obtain the temperature-sensitive electrical parameter, which is only related to the two different test currents and the measured bias voltage, excluding the GaNHEMT on-resistance R in series with the SiMOSFET body diode in the test loop GaN The influence on the linearity of the temperature-sensitive relationship; the junction temperature of the device can be accurately characterized by the completely linear correspondence between the temperature-sensitive electrical parameters and the temperature.

Description

Technical field [0001] The present invention belongs to the field of semiconductor device testing, in particular relates to a Cascode structure GaN power electronic device junction temperature fast and accurate measurement method. Background [0002] Electronic technology mainly includes information electronics technology and power electronics technology, in which power electronic devices play an important role in the field of electronic technology, is the basic unit for the implementation of electrical energy transmission, processing, storage and control. With the continuous development of science and technology, the performance of traditional silicon materials in terms of temperature, electric field, frequency and so on has reached its limit. The third generation of semiconductor materials such as GaN has the advantages of large band gap width, high breakdown electric field, high electron mobility, etc., and is increasingly used in power conversion, microwave communication and ...

AI Technical Summary

Problems solved by technology

However, Si MOSFET body diode bias has a linear relationship with temperature, and GaN HEMT on-resistance has a nonlinear relationship with temperature. The series superposition of the two cannot be simply regarded as a linear relationship to directly characterize the temperature.

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