Digital X-ray flat panel detector based on lead iodide photoconductive layer

Abstract

The invention relates to a digital X-ray flat panel detector based on a lead iodide photoconductive layer. The detector comprises a matrix thin film transistor glass substrate, the photoconductive layer and a top electrode layer, wherein the photoconductive layer is disposed on the matrix thin film transistor glass substrate and the top electrode layer is disposed on the surface of the photoconductive layer. The digital X-ray flat panel detector has the advantages that a lead iodide material layer is used as the photoconductive layer, X-ray photons are directly converted into charge signals to achieve digital X-ray imaging, the lead iodide material layer is good in structure and performance and simple in preparation process, and low-cost, large-area, continuous and stable preparation with large-thickness requirements can be achieved easily; radiation medical imaging cost and non-destructive detection imaging cost can be lowered, and the detector can be popularized in the fields of radiation imaging.

Description

technical field [0001] The invention relates to a digital X-ray flat-panel imaging device, in particular to a lead iodide photoconductive layer-based digital X-ray flat-panel detector for radiological medical imaging and non-destructive detection imaging, belonging to the field of radiation detection and imaging. Background technique [0002] At present, digital X-ray imaging equipment mainly has two types of flat panel detectors. An indirect conversion amorphous silicon (a-Si) digital X-ray flat panel detector, using a scintillator (cesium iodide CsI) or a phosphor layer (gadolinium oxysulfide GdSO) plus an amorphous silicon photodiode plus electrons The structure of switching thin film transistors (Thin film Transtors, TFT). The other is a direct-conversion amorphous selenium (a-Se) digital X-ray flat panel detector. The amorphous selenium photoconductive layer is prepared on an arrayed thin film transistor glass substrate to form an amorphous selenium plus TFT detector s...

AI Technical Summary

Problems solved by technology

[0003] Amorphous selenium materials have a low absorption rate of X-rays, and the image quality under low-dose conditions cannot be well guaranteed. Increasing the X-ray dose will not only increase the patient's radiation absorption, but also have higher requirements for the X-ray system. , it is also easy to cause the aging failure of the material

More importantly, digital X-ray flat-panel detectors based on amorphous selenium have strict requirements on the use environment, and local crystallization of amorphous selenium materials will occur in a certain range above room temperature, thereby losing the photoelectric conversion function and causing device failure.

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