Non-volatile memory element and preparation method thereof

A non-volatile storage and component technology, applied in the field of new micro-nano electronic functional devices, can solve the problem of insufficient resistance ratio, achieve the effects of good compactness, easy control of chemical composition, and improved signal-to-noise ratio

Inactive Publication Date: 2009-06-10
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the resistance switching characteristics in existing materials, that is, the shortcoming that the resistance ratio between two different resistance states is not high enough, and the purpose is to provide a Mg-based x Zn 1-x O thin film resistive switching characteristics, Mg with high resistance ratio x Zn 1-x O thin film storage element

Method used

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  • Non-volatile memory element and preparation method thereof
  • Non-volatile memory element and preparation method thereof
  • Non-volatile memory element and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Embodiment 1 prepares Mg 0.2 Zn 0.8 O storage device

[0027] (1) Preparation of Mg 0.2 Zn 0.8 O precursor solution: Mix 0.8419g diethanolamine with ethylene glycol methyl ether, then add the required zinc acetate dihydrate and magnesium acetate tetrahydrate, heat to 120°C for 10min, cool to 80°C, keep the temperature for 2h, and cool to room temperature get Mg 0.2 Zn 0.8 O solution, the concentration was adjusted to 0.5mol / L, and the final solution volume was 20ml to obtain the precursor solution.

[0028] (2) Preparation of Mg 0.2 Zn 0.8 O thin film: the Mg 0.2 Zn 0.8 O precursor in clean Pt / TiO 2 / SiO 2 / Si substrate with spin-coating method to prepare thin film, the number of layers is six. The film flinging parameter is 2500 rpm, the time is 20 seconds, and the pretreatment temperature of each layer is 350° C., and the time is 5 minutes. Repeat the process of throwing film-pretreatment-removing film to obtain Mg 0.2 Zn 0.8 O film.

[0029] (3) the a...

Embodiment 2

[0033] (1) Preparation of Mg 0.6 Zn 0.4 O solution: fully mix diethanolamine with the solvent, then add zinc acetate at room temperature, add magnesium acetate and mix evenly after dissolving, drop in 1ml of glacial acetic acid, stir at room temperature for 2 hours, then sonicate for 10 minutes, adjust the concentration, and obtain Mg 0.6 Zn 0.4 O precursor;

[0034] Mg 0.6 Zn 0.4 The preparation of O thin film and device is the same as (2), (3) and (4) of Example 1.

[0035] For device memory characteristics see image 3 , initialized with a 5mA current pulse for 50ms before the cyclic I-V curve test. The device can repeatedly switch between high and low resistance states, and the resistance ratio of high and low resistance states is greater than 10 7 .

Embodiment 3

[0037] (1)Mg 0.8 Zn0.2 O solution configuration: fully mix diethanolamine with the solvent, then add zinc acetate at room temperature, add magnesium acetate and mix evenly after dissolving (see Table 1), drop in 1ml of glacial acetic acid, stir at room temperature for 2h, then ultrasonicate for 10min, adjust Concentration, to obtain Mg for film preparation 0.8 Zn 0.2 O precursor;

[0038] Mg 0.8 Zn 0.2 The preparation of O thin film and device is the same as (2), (3) and (4) of Example 1.

[0039] The device memory characteristics are similar to (5) of Embodiment 1.

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Abstract

The invention discloses a nonvolatile storage element. A sandwich-structure MgxZn1-xO thin-film nonvolatile storage element consists of an MgxZn1-xO thin film and Pt electrodes on the upper and lower surfaces of the MgxZn1-xO thin film, wherein x is equal to 0.6, 0.8 or 1. The invention also discloses a method for preparing the nonvolatile storage element. The method comprises the steps of preparing an MgxZn1-xO precursor solution, preparing the MgxZn1-xO thin film on a Pt bottom electrode, annealing the MgxZn1-xO thin film at 650 DEG C, cooling the MgxZn1-xO thin film to room temperature, plating the upper surface of the MgxZn1-xO thin film with the Pt electrodes after heat treatment, and forming a sandwich-structure MgxZn1-xO nonvolatile storage device. The MgxZn1-xO nonvolatile storage device provided by the invention has large high-low resistance ratio which reaches 10<7> to 10<9>, is favorable for raising the signal-to-noise ratio of the device, improving the properties of the device and simplifying a storage-state readout process, and is broad in application prospects.

Description

technical field [0001] The invention relates to a non-volatile storage element and a preparation method thereof, in particular to a non-volatile storage element based on MgZnO film resistance switching characteristics and a preparation method thereof, belonging to the field of novel micro-nano electronic functional devices. Background technique [0002] At present, oxide materials such as NiO, TiO 2 、Pr x Ca 1-x MnO 3 , SrZrO 3 The resistive switching characteristics such as, that is, the conversion characteristics between two different resistance states have attracted much attention, and the memory devices made by using this characteristic have low operating current, low driving voltage, high stability, fast storage speed, and large storage capacity. Technical advantages, is expected to become a new generation of non-volatile memory, but existing oxide materials such as NiO, TiO 2 、Pr x Ca 1-x MnO 3 , SrZrO 3 In the resistive switching characteristics of ect., ther...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C16/02G11C11/56
Inventor 包定华陈心满
Owner SUN YAT SEN UNIV
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