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Non-volatile resistance memory element and preparation method thereof

A resistance storage, non-volatile technology, applied in the field of new micro-nano electronic functional devices, can solve the problem of switching parameters such as switching voltage divergence, achieve the effect of repeatable resistance switching characteristics, simple operation, and simple implementation

Inactive Publication Date: 2011-03-30
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, based on oxide materials (such as NiO, TiO 2 、Pr x Ca 1-x MnO 3 , SrZrO 3 etc.), the switching parameters such as the switching voltage have large divergence, and at the same time, it is also hoped that the current value used for device initialization can be further reduced in practical applications.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment 1 Non-volatile resistance memory element Pt / NiO / Mg 0.6 Zn 0.4 0 / Pt

[0033] The non-volatile resistance memory element of this embodiment is Pt / NiO / Mg 0.6 Zn 0.4 O / Pt, its preparation method comprises the steps:

[0034] (1) Preparation of NiO sol: Mix 0.2877g of diethanolamine with ethylene glycol methyl ether, add 1.5235g of nickel acetate, heat to 80°C, keep the temperature for 2h, cool to room temperature to obtain NiO solution, adjust the concentration to 0.3mol / L, The final solution volume is 20ml, and the required NiO sol is obtained;

[0035] (2) Preparation of Mg 0.6 Zn 0.4 O sol: fully mix 0.8412g diethanolamine with ethylene glycol methyl ether, add 0.8824g zinc acetate at room temperature, add 1.2932g magnesium acetate after dissolving, mix well, drop 1ml of glacial acetic acid, and stir at room temperature for 2h Sonicate for 10min, adjust the concentration to 0.5mol / L, and finally the solution volume is 20ml to obtain the required Mg 0.6 Z...

Embodiment 2

[0045] Embodiment 2 Non-volatile resistance memory element Pt / NiO / Mg 0.8 Zn 0.2 O / Pt

[0046] The non-volatile resistance memory element of this embodiment is Pt / NiO / Mg 0.8 Zn 0.2 O / Pt, its preparation method comprises the steps:

[0047] (1) prepare NiO sol, step is with the step (1) in the embodiment 1;

[0048] (2) Preparation of Mg 0.8 Zn 0.2 O sol: Mix 0.8412g diethanolamine and ethylene glycol methyl ether thoroughly, add 0.4412g zinc acetate at room temperature, add 1.7243g magnesium acetate after dissolving, mix well, drop 1ml of glacial acetic acid, and stir at room temperature for 2h Sonicate for 10min, adjust the concentration to 0.5mol / L, and finally the solution volume is 20ml to obtain the required Mg 0.8 Zn 0.2 O-sol;

[0049] (3) Preparation of NiO / Mg 0.6 Zn 0.4 O heterojunction film:

[0050] a. Preparation of Mg 0.8 Zn 0.2 O thin film: the obtained Mg prepared by step (2) 0.8 Zn 0.2 O sol was prepared on the substrate (clean Pt) by spin-coatin...

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Abstract

The invention discloses a non-volatile resistance memory element and a preparation method thereof. The memory element comprises a NiO / Mgx Zn (1-x) O (x=0.4-1) p-n heterojunction thin-film layer as well as Pt electrodes which are respectively arranged on the upper and the lower surface of the heterojunction thin-film layer. The resistance memory element has stable and repeatable resistance switch characteristic, can be switched between two states of high resistance and low resistance with the corresponding voltage values distributed within the range of 0.55-0.6V, and has smaller radiation degree which is lower than 1V, so as to meet the requirements of practical application. Furthermore, the ratio between the high resistance and the low resistance of the memory element is higher and reaches10<6>, so that higher signal-to-noise ratio of devices can be guaranteed. Meanwhile, the memory element has lower initial current which is 1muA. The preparation method adopts a sol-gel method and hassimple operation, low cost and manageable chemical composition; and the prepared film has no cracking, good compactness and even crystal grain distribution.

Description

technical field [0001] The invention belongs to the field of novel micro-nano electronic functional devices, and specifically relates to a storage element and a manufacturing method thereof, in particular to a non-volatile resistance storage element and a manufacturing method thereof. Background technique [0002] Since 1990, memory developed based on "semiconductor storage technology" has become an emerging technology for storage media today. At the same time, the demand for memory will increase with the storage or transmission of large amounts of data. Therefore, the development of new State memory elements have their considerable significance and value. [0003] At present, oxide materials such as NiO, TiO 2 , ZnO, Pr x Ca 1-x MnO 3 , SrZrO 3 The resistive switching characteristics, that is, the switching characteristics between two different resistive states, have attracted much attention, and the resistive memory devices made with this characteristic have low opera...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C20/06G11C11/56H01L45/00
Inventor 包定华陈心满
Owner SUN YAT SEN UNIV
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