Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

GdSrMnCo codoped bismuth ferrite multiferroic film and making method thereof

A multi-ferrous thin film, bismuth ferrite technology, applied in the coating and other directions, to achieve the effect of suppressing valence fluctuations, good dielectric and ferroelectric properties, and suppressing the volatilization of Bi

Active Publication Date: 2017-08-11
SHAANXI UNIV OF SCI & TECH
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently, there is no information about Bi 0.97-x Gd x Sr 0.03 Fe 0.94 mn 0.04 co 0.02 o 3 Related reports on multiferroic thin films and their preparation methods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GdSrMnCo codoped bismuth ferrite multiferroic film and making method thereof
  • GdSrMnCo codoped bismuth ferrite multiferroic film and making method thereof
  • GdSrMnCo codoped bismuth ferrite multiferroic film and making method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0031] Step 2: Taking bismuth nitrate, gadolinium nitrate, strontium nitrate, ferric nitrate, manganese acetate and cobalt nitrate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.99:0.03:0.03:0.94:0.04:0.02 (x=0.03 ) is dissolved in ethylene glycol methyl ether, stirs 30min, then adds acetic anhydride, stirs 90min, obtains the stable precursor solution that the total concentration of metal ions is 0.2mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3.2:1;

[0032] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with an ultraviolet light irradiation instrument for 40 minutes, so that the surface of the FTO / glass substrate reaches atomic cleanliness, and then spin-coat the precursor solution o...

Embodiment 2

[0035] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0036] Step 2: Taking bismuth nitrate, gadolinium nitrate, strontium nitrate, ferric nitrate, manganese acetate and cobalt nitrate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.96:0.06:0.03:0.94:0.04:0.02 (x=0.06 ) is dissolved in ethylene glycol methyl ether, stirs 30min, then adds acetic anhydride, stirs 90min, obtains the stable precursor solution that metal ion total concentration is 0.25mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3.5:1;

[0037] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with an ultraviolet light irradiation instrument for 40 minutes, so that the surface of the FTO / glass substrate reaches atomic cleanliness, and then spin-coat the precursor solution on the...

Embodiment 3

[0040] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0041] Step 2: Take bismuth nitrate, gadolinium nitrate, strontium nitrate, ferric nitrate, manganese acetate and cobalt nitrate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.93:0.09:0.03:0.94:0.04:0.02 (x=0.09 ) is dissolved in ethylene glycol methyl ether, stirs 30min, then adds acetic anhydride, stirs 90min, obtains the stable precursor solution that metal ion total concentration is 0.3mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0042] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with a UV irradiator for 40 minutes, so that the surface of the FTO / glass substrate reaches atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate, and the coa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a GdSrMnCo codoped bismuth ferrite multiferroic film and a making method thereof. The Bi0.97-xGdxSr0.03Fe0.94Mn0.04Co0.02O3 multiferroic film that is the GdSrMnCo codoped bismuth ferrite multiferroic film is made from bismuth nitrate, gadolinium nitrate, strontium nitrate, ferric nitrate, manganese acetate and cobalt nitrate (5% excessive bismuth nitrate) through a spin coating technology and a layer-by-layer annealing technology by using ethylene glycol monomethyl ether and acetic anhydride as a solvent. The method which adopts a sol-gel process and the spin coating and layer-by-layer annealing technologies has the advantages of simple device requirements, easiness in realization of experimental conditions, suitableness for making a film on a large surface and a surface with an irregular shape, accurate and controllable chemical components, and improvement of the multiferroic performance of a BiFeO3 film; and the produced GdSrMnCo codoped bismuth ferrite multiferroic film has good uniformity and has the ferroelectric stability changing with the applied voltage.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to the preparation of a GdSrMnCo co-doped bismuth ferrite multiferroic film on the surface of a functionalized FTO / glass substrate, specifically Bi 0.97-x Gd x Sr 0.03 Fe 0.94 mn 0.04 co 0.02 o 3 Multiferroic thin film, x=0.03~0.15. Background technique [0002] With the rapid development of science and technology, the requirements for miniaturization and diversification of devices are getting higher and higher, which urgently requires the development of new materials with multiple functions to replace single-function materials to meet the development of multi-functional new materials. The demand for devices has made multiferroic nanomaterials a hot spot in contemporary new material science research. Bismuth ferrite (BiFeO 3 ), referred to as BFO, is currently the only single-phase multiferroic material that exists both ferroelectricity and antiferromagnetism at room temper...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/25C04B35/26C04B35/622
CPCC03C17/25C03C2217/24C03C2218/116C04B35/2633C04B35/62218C04B2235/3213C04B2235/3224C04B2235/3262C04B2235/3272C04B2235/3275C04B2235/3298C04B2235/606C04B2235/656C04B2235/6567C04B2235/6583C04B2235/94
Inventor 谈国强柴正军乐忠威薛敏涛任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com