Method for preparing Tb-doped BiFeO3 ferroelectric film on surface of conductive glass substrate

A technology for conducting glass and substrate surface, applied in the field of functional materials, can solve the problems of low dielectric constant of bismuth ferrite material, large leakage conductance of bismuth ferrite material, difficult to observe large remanent polarization value, etc., so as to improve the residual polarization value. Polarization value, the effect of suppressing volatilization

Inactive Publication Date: 2012-08-15
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The problem that has always limited the application of bismuth ferrite materials is: the dielectric constant of bismuth ferrite materials is low, and it is difficult to observe a large r

Method used

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  • Method for preparing Tb-doped BiFeO3 ferroelectric film on surface of conductive glass substrate
  • Method for preparing Tb-doped BiFeO3 ferroelectric film on surface of conductive glass substrate

Examples

Experimental program
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Embodiment 1

[0026] Step 1: Select the FTO conductive glass substrate as the substrate, place the cut FTO conductive glass substrate in detergent, acetone, and ethanol for ultrasonic cleaning for 10 minutes to remove impurities such as grease on the surface of the FTO conductive glass substrate; After cleaning, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen;

[0027] Step 2: Place the clean FTO conductive glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness", form hydroxyl groups with better hydrophilicity, and improve the hydrophilicity of the substrate;

[0028] Step 3: Fe(NO 3 ) 3 9H 2 O, Bi(NO 3 ) 3 ·5H 2 O and Tb(NO 3 ) 3 ·5H 2 O was dissolved in a mixture of ethylene glycol methyl ether and glacial acetic acid at a molar ratio of 1:0.95:0.05 to obtain a precursor solution with a metal ion concentration of 0.3-0.9 mol / L, and magnetically stirred for 0.5 h to obtain stable ...

Embodiment 2

[0032] Step 1: Select the FTO conductive glass substrate as the substrate, place the cut FTO conductive glass substrate in detergent, acetone, and ethanol for ultrasonic cleaning for 10 minutes to remove impurities such as grease on the surface of the FTO conductive glass substrate; After cleaning, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen;

[0033] Step 2: Place the clean FTO conductive glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness", form hydroxyl groups with better hydrophilicity, and improve the hydrophilicity of the substrate;

[0034] Step 3: Fe(NO 3 ) 3 9H 2 O, Bi(NO 3 ) 3 ·5H 2 O and Tb(NO 3 ) 3 ·5H 2 O was dissolved in a mixture of ethylene glycol methyl ether and glacial acetic acid at a molar ratio of 1:0.90:0.10 to obtain a precursor solution with a metal ion concentration of 0.3-0.9 mol / L, and magnetically stirred for 0.5 h to obtain stable ...

Embodiment 3

[0038] Step 1: Select the FTO conductive glass substrate as the substrate, and place the cut FTO conductive glass substrate in detergent, acetone, and ethanol for ultrasonic cleaning for 10 minutes to remove grease and other impurities on the surface of the FTO conductive glass substrate. Rinse the substrate with a large amount of distilled water after each ultrasonic cleaning, and finally dry it with nitrogen;

[0039] Step 2: Place the clean FTO conductive glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness", form hydroxyl groups with better hydrophilicity, and improve the hydrophilicity of the substrate;

[0040] Step 3: Fe(NO 3 ) 3 9H 2 O, Bi(NO 3 ) 3 ·5H 2 O and Tb(NO 3 ) 3 ·5H 2 O was dissolved in a mixture of ethylene glycol methyl ether and glacial acetic acid at a molar ratio of 1:0.85:0.15 to obtain a precursor solution with a metal ion concentration of 0.3-0.9 mol / L, and magnetically stirred for 0....

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Abstract

The invention discloses a method for preparing a Tb-doped BiFeO3 ferroelectric film on the surface of a conductive glass substrate. The method comprises the following steps of: 1, cleaning the substrate; 2, irradiating the substrate by using ultraviolet so that the surface of the substrate reaches atomic cleanliness; 3, dissolving Fe(NO3)3.9H2O, Bi(NO3)3.5H2O and Tb(NO3)3.5H2O in a molar ratio of 1: (1-x): x (x=0-0.15) into a mixed solution of ethylene glycol monomethyl ether and glacial acetic acid; and 4, preparing the film by adopting a spin coating method, then pre-annealing, annealing, crystallizing, and thus obtaining the crystalline Tb-doped BiFeO3 ferroelectric film. By the method, the residual polarization value of the film can be greatly improved; and after Tb is doped, the residual polarization value can be improved to 55mu C/cm<2>.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to the preparation of Tb-doped BiFeO on the surface of a functionalized conductive glass substrate 3 thin film method. Background technique [0002] In recent years, BiFeO 3 As a new type of ferromagnetic electric material, it has aroused great interest. BiFeO 3 Simple perovskite structure with trigonal twist and simultaneous ferroelectric order at room temperature (T C =810℃) and G-type antiferromagnetic order (T N =380℃), is one of the few single-phase multiferroic materials. BiFeO 3 Magnetoelectric couplings have extremely important application prospects in information storage, spintronic devices, magnetic sensors, and capacitive-inductive integrated devices. [0003] The problem that has always limited the application of bismuth ferrite materials is: the dielectric constant of bismuth ferrite materials is low, and it is difficult to observe a large remanent polarization v...

Claims

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Application Information

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IPC IPC(8): C03C17/34
Inventor 谈国强薛旭
Owner SHAANXI UNIV OF SCI & TECH
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