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BiFe0.96-yMn0.04CryO3 ferroelectric film with high remanent polarization and high dielectric constant and preparation method thereof

A high dielectric constant and polarization technology, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve the problems of limited practical application, large leakage current density, inability to obtain saturation and large residual polarization. hysteresis loop and other problems, to achieve the effects of precise and controllable chemical composition, uniform doping, and reduction of surface defects

Active Publication Date: 2014-02-26
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, pure phase BiFeO 3 Due to the large leakage current density of the thin film, it cannot obtain the hysteresis loop with saturation and large remanent polarization, which limits its practical application.
In addition, the lower dielectric constant also limits the BiFeO 3 Application of thin films in dielectric properties such as capacitors

Method used

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  • BiFe0.96-yMn0.04CryO3 ferroelectric film with high remanent polarization and high dielectric constant and preparation method thereof
  • BiFe0.96-yMn0.04CryO3 ferroelectric film with high remanent polarization and high dielectric constant and preparation method thereof
  • BiFe0.96-yMn0.04CryO3 ferroelectric film with high remanent polarization and high dielectric constant and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1) The Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·5H 2 O, C 4 H 6 MnO 4 ·4H 2 O and Cr (NO 3 ) 3 ·9H 2 O was mixed in a molar ratio of 1.05:0.96:0.04:0.00 and dissolved in ethylene glycol methyl ether, and then acetic anhydride was added to it to fully dissolve bismuth nitrate, ferric nitrate, manganese acetate and chromium nitrate, and magnetically stirred for 3 hours. Stable BiFe 0.96 Mn 0.04 O 3 Precursor; Among them, the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1, BiFe 0.96 Mn 0.04 O 3 The concentration of metal ions in the precursor solution is 0.003~0.3mol / L;

[0024] 2) The BiFe 0.96 Mn 0.04 O 3 Precursor liquid homogenization is used to prepare a thin film on the FTO / glass substrate whose surface has reached atomic cleanliness. The homogenization speed is 3500r / min, and the homogenization is 15 seconds. After the homogenization is completed, bake at 260℃ for 5 minutes to obtain a dry film, and then adopt layers Annealing to obtain high residual ...

Embodiment 2

[0027] 1) The Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·5H 2 O, C 4 H 6 MnO 4 ·4H 2 O and Cr (NO 3 ) 3 ·9H 2 O was mixed at a molar ratio of 1.05:0.95:0.04:0.01 and dissolved in ethylene glycol methyl ether, and then acetic anhydride was added to it to fully dissolve bismuth nitrate, ferric nitrate, manganese acetate and chromium nitrate, and the result was obtained after magnetic stirring for 3 hours Stable BiFe 0.95 Mn 0.04 Cr 0.01 O 3 Precursor; Among them, the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1, BiFe 0.95 Mn 0.04 Cr 0.01 O 3 The concentration of metal ions in the precursor solution is 0.003~0.3mol / L;

[0028] 2) Using spin coating method to apply BiFe 0.95 Mn 0.04 Cr 0.01 O 3 Precursor liquid homogenization film is prepared on the FTO / glass substrate with atomic cleanliness on the surface. The homogenization speed is 4000r / min and the homogenization is 15s. After the homogenization is completed, bake at 260℃ for 5min to obtain a dry film, and then ...

Embodiment 3

[0031] 1) The Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·5H 2 O, C 4 H 6 MnO 4 ·4H 2 O and Cr (NO 3 ) 3 ·9H 2 O was mixed in a molar ratio of 1.05:0.94:0.04:0.02 and dissolved in ethylene glycol methyl ether, and then acetic anhydride was added to it to fully dissolve bismuth nitrate, ferric nitrate, manganese acetate and chromium nitrate, and magnetically stirred for 3 hours. Stable BiFe 0.94 Mn 0.04 Cr 0.02 O 3 Precursor, in which the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1, BiFe 0.94 Mn 0.04 Cr 0.02 O 3 The concentration of metal ions in the precursor solution is 0.003~0.3mol / L;

[0032] 2) The BiFe 0.94 Mn 0.04 Cr 0.02 O 3 The precursor liquid homogenization is used to prepare a thin film on the FTO / glass substrate whose surface has reached atomic cleanliness. The homogenization speed is 3600r / min, and the homogenization is 15s. After the homogenization is completed, bake at 260℃ for 5 minutes to obtain a dry film, and then adopt layers Annealing to obt...

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Abstract

The invention relates to a BiFe0.96-yMn0.04CryO3 ferroelectric film with high remanent polarization and high dielectric constant and a preparation method thereof. The method comprises the steps of mixing bismuth nitrate, ferric nitrate, manganese acetate and chromic nitrate according to the mole ratio of 1.05: (0.96-y): 0.04: y, then, dissolving a mixture into mixed ethylene glycol monomethyl ether, and then, adding acetic anhydride, so as to obtain a BiFe0.96-yMn0.04CryO3 precursor solution with the metal ion concentration of 0.003-0.3mol / L; uniformly dispensing the BiFe0.96-yMn0.04CryO3 precursor solution on a FTO / glass substrate, of which the surface reaches atomic cleanliness, by adopting a spin-coating method, so as to prepare a film, then, drying to obtain a dry film, and then, adopting a layer-by-layer annealing process, thereby obtaining the crystalline BiFe0.96-yMn0.04CryO3 film. The method has the advantages that the requirements for equipment are simple, the experimental conditions are easily met, the prepared film is relatively good in uniformity and easy in doped amount control, and the ferroelectric properties and dielectric properties of the film can be improved greatly.

Description

Technical field [0001] The invention belongs to the field of functional materials, and specifically relates to a BiFe with high residual polarization strength and high dielectric constant 0.96-y Mn 0.04 Cr y O 3 Ferroelectric thin film and its preparation method. Background technique [0002] BiFeO 3 As one of the few new single-phase multiferroic materials that have ferroelectricity, ferromagnetism, antiferroelectricity and antiferromagnetism at the same time at room temperature. BiFeO 3 It has a simple perovskite structure with a trigonal twist. Its ferroelectric Curie temperature is at room temperature Tc=810℃, and its ferromagnetic Nier temperature is TN=380℃. BiFeO 3 Thin films have wide application potential in information storage, spintronic devices, information storage, image display, pyroelectric effect, miniaturized integrated electronic devices, etc., which have aroused great interest. However, the pure phase BiFeO 3 Due to the large leakage current density of the fil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G49/00
Inventor 谈国强刘文龙
Owner SHAANXI UNIV OF SCI & TECH
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