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P type doping CuCrO2 based diluted magnetic semiconductor material and preparation thereof

A technology of dilute magnetic semiconductors and bulk materials, applied in the direction of inorganic material magnetism, inductance/transformer/magnet manufacturing, electrical components, etc., to achieve the effect of simple technology and low energy consumption

Inactive Publication Date: 2009-07-22
ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, besides ZnO, TiO is the most researched oxide DMS. 2 , Co-doped TiO 2 Some progress has been made in the research of T c above room temperature, but the origin of its ferromagnetism has been debated

Method used

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  • P type doping CuCrO2 based diluted magnetic semiconductor material and preparation thereof
  • P type doping CuCrO2 based diluted magnetic semiconductor material and preparation thereof
  • P type doping CuCrO2 based diluted magnetic semiconductor material and preparation thereof

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Experimental program
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Effect test

Embodiment 1

[0029] Embodiment 1: complete the preparation according to the following steps:

[0030] (a) According to the molar ratio of copper, chromium and manganese as 1:0.90:0.10, weigh copper acetate, chromium nitrate and manganese acetate, add powder into distilled water and add appropriate amount of citric acid, stir at room temperature until completely dissolved , to obtain a uniformly mixed solution;

[0031] (b) drying the stirred solution in an oven at 100° C. to obtain a precursor powder;

[0032] (c) Grinding the precursor powder and putting it into a furnace for pre-sintering at 300-500° C. for 3 hours to remove organic matter in the powder.

[0033] (d) The powder obtained by pre-calcination was sintered at 1100°C for 10 hours to prepare CuCr 0.90 mn 0.10 o 2 powder.

[0034] (e) Press the obtained powder into a circular sheet-like block with a tablet machine, and sinter at 1100°C for 10 hours to obtain CuCr 0.90 mn 0.10 o 2 bulk material.

Embodiment 2

[0035] Embodiment 2: complete the preparation according to the following steps:

[0036] (a) According to the molar ratio of copper, chromium and manganese as 1:0.80:0.20, weigh copper acetate, chromium nitrate and manganese acetate, add powder into distilled water and add appropriate amount of citric acid, stir at room temperature until completely dissolved , to obtain a uniformly mixed solution;

[0037] (b) drying the stirred solution in an oven at 100° C. to obtain a precursor powder;

[0038] (c) Grinding the precursor powder and putting it into a furnace for pre-sintering at 300-500° C. for 3 hours to remove organic matter in the powder.

[0039] (d) The powder obtained by pre-calcination was sintered at 1100°C for 10 hours to prepare CuCr 0.80 mn 0.20 o 2 powder.

[0040] (e) Press the obtained powder into a circular sheet-like block with a tablet machine, and sinter at 1100°C for 10 hours to obtain CuCr 0.80 mn 0.20 o 2 bulk material.

Embodiment 3

[0041] Embodiment 3: complete the preparation according to the following steps:

[0042] (a) According to the molar ratio of copper, chromium and nickel is 1:0.95:0.05, weigh copper acetate, chromium nitrate and nickel acetate, add powder into distilled water and add appropriate amount of citric acid, stir at room temperature until completely dissolved , to obtain a uniformly mixed solution;

[0043] (b) drying the stirred solution in an oven at 100° C. to obtain a precursor powder;

[0044] (c) Grinding the precursor powder and putting it into a furnace for pre-sintering at 300-500° C. for 3 hours to remove organic matter in the powder.

[0045] (d) The powder obtained by pre-calcination was sintered at 1100°C for 10 hours to prepare CuCr 0.95 Ni 0.05 o 2 powder.

[0046] (e) Press the obtained powder into a circular sheet-like block with a tablet machine, and sinter at 1100°C for 10 hours to obtain CuCr 0.95 Ni 0.05 o 2 bulk material.

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Abstract

The invention discloses a p type doped CuCro2-based dilute magnetic semiconductor material and a manufacturing method thereof. The CuCro2-based dilute magnetic semiconductor polycrystal block is manufactured, and has a molecular structural formula of CuCr(1-x)TMxO2, wherein, TM is transition metal elements which are Fe, Co, Ni, Mn, and the concentration thereof x is more than or equal to 0 and is less than or equal to 0.2. Cupric acetate, chromic nitrate and transition metal salt are measured according to a mole ratio of cupric, chromic to transition metal of 1: (0.80-1): (0-0.20), the powder is added into distilled water and added with adequate amount of citric acid, and then stirred at room temperature till fully dissolved, thereby obtaining a well mixed solution; then, after processes of parching, grinding, tablet compressing and heat treatment, dilute magnetic semiconductor block material of CuCr(1-x)TMxO2 is manufactured. The invention adopts a sol-gal method and has the advantages of low energy consumption, simple technique and the like. In the invention, all of the components in the solution are well mixed, and the uniformity degree can reach molecular level, so that multi-component homogenous dopant can be manufactured was well as products that are hard to be obtained by traditional solid phase methods. And experiment results have repeatability.

Description

Technical field: [0001] The invention relates to a p-type delafossite structure CuCrO 2 Based dilute magnetic semiconductor material and preparation method thereof, especially CuCrO with ferromagnetic transition prepared by sol-gel method combined with doping 2 Preparation method of base dilute magnetic semiconductor. Background technique: [0002] In the past century, people's daily life has been inseparable from semiconductors, but people's use of semiconductors is only to manipulate their electron charge degrees of freedom, while its electron spin degrees of freedom have been neglected by people. Semiconductor spintronics attempts to change this mode of modern information processing technology, that is, to manipulate the degree of freedom of electron spin in semiconductors or simultaneously manipulate the two degrees of freedom of electron spin and electron charge in semiconductors to process and store information. Through the study of semiconductor spintronics, it is e...

Claims

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Application Information

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IPC IPC(8): H01F1/40H01F41/00C04B35/12C04B35/45C04B35/622
Inventor 李达方晓东邓赞红董伟伟陶汝华
Owner ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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