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Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof

A room temperature ferromagnetic and dilute magnetic semiconductor technology, applied in the field of material science, can solve the problems of difficult regulation of ferromagnetism and low conductivity, and achieve the effects of stable product performance, high conductivity and strong repeatability

Inactive Publication Date: 2007-03-07
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] We first discovered that Fe-doped NiO nanopowders are ferromagnetic at room temperature in 2005. However, the electrical conductivity of this material is very low, and the ferromagnetism is difficult to control.

Method used

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  • Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof
  • Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof
  • Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0027]Embodiment 1: take by weighing appropriate amount of nickel nitrate, manganese nitrate, citric acid according to the formula in table 1, they are dissolved in ethylene glycol monomethyl ether together, add the concentration of 0.4mL after dissolving completely and be 0.1mol / L Lithium nitrate in ethylene glycol monomethyl ether solution, and finally sols of Li-Ni-Mn-O systems with different Mn contents were prepared. Use the above-mentioned sol, spin the film by spin coating, first dry the wet film, and then anneal in a rapid heat treatment furnace at 300 ° C, repeat this process until the required thickness, and finally anneal at 600 ° C, The desired film is obtained, and Fig. 1 shows the XRD curve of the film; Fig. 2 shows the M-H curve of the film.

[0028] Sample serial number

Embodiment 2

[0029] Embodiment 2: take by weighing an appropriate amount of nickel nitrate, manganese nitrate, citric acid according to the formula in table 2, they are dissolved in ethylene glycol monomethyl ether together, add the nitric acid that an amount of concentration is 0.1mol / L after dissolving completely Lithium ethylene glycol monomethyl ether solution, and finally the sols of Li-Ni-Mn-O systems with different Li contents were prepared. Use the above-mentioned sol, spin the film by spin coating, first dry the wet film, and then anneal in a rapid heat treatment furnace at 300 ° C, repeat this process until the required thickness, and finally anneal at 600 ° C, Get the desired film. Figure 3 shows the XRD curve of the film; Figure 4 shows the M-H curve of the film.

[0030] Sample serial number

Embodiment 3

[0031] Embodiment 3: take by weighing 0.564 gram of nickel nitrate, 0.016 gram of ferric nitrate, 0.546 gram of citric acid, they are dissolved in ethylene glycol monomethyl ether together, add 1ml concentration after dissolving completely and be the ethyl alcohol of the lithium nitrate of 0.1mol / L Glycol monomethyl ether solution, the final prepared proportioning is Li 0.01 Ni 0.97 Fe 0.02 Sol of O. Use the above-mentioned sol, spin the film by spin coating, first dry the wet film, and then anneal in a rapid heat treatment furnace at 300 ° C, repeat this process until the required thickness, and finally anneal at 600 ° C, Get the desired film. Figure 5 shows the XRD curve of the film; Figure 6 shows the M-H curve of the film.

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PUM

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Abstract

The invention discloses an oxide base rare magnetic conductive film and preparing method with indoor temperature magnet in the material scientific domain, which is characterized by the following: displaying the component as LixNi1-x-yMyO (o<=x<=0.1; o C23C 30 / 00 C23C 18 / 02 4 5 1 2006 / 9 / 1 1924095 2007 / 3 / 7 100451172 2009 / 1 / 14 2009 / 1 / 14 2009 / 1 / 14 Tsinghua University Beijing 100084 Lin Yuanhua Nan Cewen Zhao Rongjuan liguang song 11246

Description

technical field [0001] The invention belongs to the field of material science, in particular to an oxide-based dilute magnetic semiconductor thin film with room temperature ferromagnetism and a preparation method thereof. Background technique [0002] Diluted Magnetic Semiconductors (DMS) have excellent magnetic, magneto-optical, and magnetoelectric properties due to the use of the charge and spin properties of electrons at the same time, making them widely used in magnetic sensors, high-density memories, optical isolators, and semiconductors. Lasers and other fields have broad application prospects and become new research hotspots in the field of materials. Based on this, high-performance spintronic devices that work simultaneously based on the charge and spin characteristics of electrons can be developed. It has the advantages of fast speed, small size, and low energy consumption, so that information storage and information processing can be carried out simultaneously. Th...

Claims

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Application Information

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IPC IPC(8): C23C30/00C23C18/02
Inventor 林元华南策文赵荣娟
Owner TSINGHUA UNIV
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