A novel method for measuring current carrier mobility of magnetic semiconductor

Abstract

The invention relates to a detecting method for the magnetic semiconductor carrier mobility, which is used to solve the abnormal Hall Effect of the magnetic semiconductor, the method of detecting movability with the common Hall Effect which is used to detect the non-magnetic semiconductor carrier density and the mobility is not suit for it. According to the literature document, there isn't a method to detect the magnetic semiconductor carrier mobility at present. The invention provides that the electrochemistry C-V method combines with the Van de Pol method (magnetic field is not needed), the magnetic semiconductor carrier mobility is measured by the electrochemistry C-V method, the electrical resistivity is measured by the Van de Pol method, and the magnetic semiconductor carrier mobility is determined according to the relationship of the carrier density, electrical resistivity and the carrier mobility. The invention doesn't relate to the Hall measurement and avoid the influence of Hall Effect. The characteristics of invention are that it needn't the specially-produced equipment, easy to operate and measure accuracy.

Description

Technical field: [0001] The invention belongs to a method for measuring parameters of semiconductor materials, and mainly relates to the measurement of carrier mobility of magnetic semiconductors. technical background: [0002] Since the mid-1990s when III-V compound-based dilute magnetic semiconductors GaMnAs and InMnAs were successfully prepared, since the semiconductors and non-diluted magnetic semiconductors can form a variety of heterojunctions with good quality, the preparation of various electron-based Electronic devices that work in turn are possible, so dilute magnetic semiconductors have received extensive attention in the fields of electronic information and material science. It has attractive application prospects in quantum computing, information storage, transmission and processing. The test of electrical characteristics is an important link in the research of semiconductor materials. Carrier mobility is one of the important electrical parameters to be conside...

AI Technical Summary

Problems solved by technology

However, a large body of evidence demonstrates that the effect of the relative effective conductivity of MnAs is insufficient to explain the 780cm 2 High apparent carrier mobility of / V.S

In fact, the MnAs metal compound is "buried" in the GaAs semiconductor containing the Mn substitution acceptor, and a Schottky barrier is formed at the interface between the two, and the MnAs phase is surrounded by a layer of near-insulating carrier depletion layer, showing the conductance Therefore, the high apparent carrier mobility of the GaAs system containing the MnAs phase cannot be explained by the effect of the high conductivity of the MnAs phase on the effective system.

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