1477 results about "Die (integrated circuit)" patented technology

Embodiments of an integrated circuit (IC) package including a package substrate, a first microelectronic assembly including a plurality of first IC die, each first IC die having memory circuitry and a first surface, an opposing second surface, and a third surface orthogonal to the first and second surfaces; and a second IC die having a first surface and an opposite second surface, wherein the third surfaces of the first IC die are coupled to the second surface of the second IC die, and the first surface of the second IC die is coupled to the package substrate; a third IC die having a first surface and an opposing second surface, wherein the first surface third IC die is coupled to the package substrate; and a plurality of fourth IC die, each fourth IC die including compute circuitry and electrically coupled to the second surface of the third IC die.

A semiconductor package includes a redistribution structure, first and second integrated circuit dies that are connected to a first side of the redistribution structure, and third and fourth integrated circuit dies that are connected on a second side, opposite to the first side, of the redistribution structure. An optical bridge die is connected between the third and fourth integrated circuit dies, to the second side of the redistribution structure, which is configured such that the first and second integrated circuit dies optically communicate through the optical bridge die.

An apparatus includes an optical interposer including a first surface, a first mating protrusion extending outwardly from the first surface, and two or more alignment protrusions extending outwardly from the first surface. The first mating protrusion is to be partially disposed within a first recess formed in a second surface of a photonic integrated circuit (PIC) die when the first surface of the optical interposer opposes the second surface of the PIC die and respective distal surfaces of the two or more alignment protrusions contact the second surface of the PIC die. A first portion of an outer surface of the first mating protrusion is to contact a first side wall of the first recess and a second portion of the outer surface of the first mating protrusion is to oppose a second side wall of the first recess such that a second space is to be defined therebetween.

Semiconductor devices and systems with optical and electrical interposers, and methods of forming the same, are disclosed herein. In one example, a semiconductor device includes a glass substrate and a bridge die embedded in the glass substrate, where the glass substrate includes one or more optical waveguides and the bridge die includes an interconnect to electrically couple multiple integrated circuit dies.

Embodiments of a microelectronic assembly comprise: a first set comprising one or more of first integrated circuit (IC) dies; a second set comprising another one or more of the first IC dies; a plate between, and in direct contact with, the first set and the second set; and a second IC die coupled to the first set, the second set, and the plate. Each IC die comprises a substrate of semiconductor material and an interconnect region including metallization in interlayer dielectric (ILD), the substrate and the interconnect region share a planar interface, and the first IC dies and the second IC die are arranged with the planar interfaces of the first IC dies parallel to each other and orthogonal to the planar interface of the second IC die.

An electronic hardware wallet for conducting cryptocurrency transactions, blockchain transactions, or other secure communications is embodied on a monolithic integrated circuit (IC) die supported on a single substrate. The monolithic semiconductor device can include a non-volatile data store for storing application software executable by the multi-core processor, and the secure element can include a secure data store for storing secret data (e.g., a private key) for use in a secure electronic transaction. In some embodiments, the secure element can include hardware logic embodying a cryptocurrency algorithm associated with executing the secure electronic transaction and can have a limited and selective communication bus between the secure element and the multi-core processor. The electronic hardware wallet can communicatively couple with one or more other devices to facilitate a multi-party computation (MPC) algorithm for authenticating the cryptocurrency algorithm and validating the secure electronic transaction.

An electronic device can be validated at a circuit-level or device-level to provide supply chain verification of an integrated circuit (IC) product. A modern integrated circuit package can comprise multiple dies, systems and circuitry built from a variety of device-level structures. Device-level verification disclosed herein can confirm that a device-level (sub-) component of an integrated circuit product is sourced by a known or otherwise valid manufacturer. This serves to mitigate or avoid a hacking attempt involving illicit replacement of a component of an IC product by an intermediate handler of the IC product within a supply chain.

Die or chip interconnect clock skew compensation can be performed for a multi -IC (Integrated Circuit) module. A timing margin or eye-width parameter (for example, a setup or hold time) for each of one or more interconnect lanes may be measured at a first die or chip of the multi - IC module that is receiving data and clock signals from a second die or chip of the multi -IC module. Compensation information can be determined based on the measured timing margin or eye-width parameter for each of one or more interconnect lanes. Compensation for clock skew can then be based on the determined compensation information.

The invention relates to an integrated circuit core particle time sequence optimization method and device, equipment and a medium. Analyzing the time sequence of the core particle according to the total negative time sequence margin of all paths generated by the OpenSTA tool on the establishment time, the total negative time sequence margin of all paths on the retention time, the negative time sequence margin of all paths under the worst establishment time and the negative time sequence margin of all paths under the worst retention time; when a violation occurs, the preliminary core particle division scheme is readjusted to determine an iterative division scheme until the time sequence of the core particles meets the requirement; and when the iteration division scheme meets the time sequence optimization requirement, recording and storing the current iteration division scheme, and continuing to perform regular division on the integrated circuit modules at the same level until all the preliminary core particle division schemes at the level are completely traversed. The design period can be greatly shortened, and automation and flexibility can be remarkably improved.

Technologies for cooling conformal power delivery structures are disclosed. In one embodiment, an integrated circuit component has a die with a backside power plane mated to it. A lid of the integrated circuit component is mated with the backside power plane, forming a sealed cavity. The lid has an inlet and an outlet, and a channel is defined in the lid for liquid coolant to flow from the inlet, across the backside power plane, and to the outlet. The liquid coolant directly contacts the backside power plane, efficiently removing heat from the backside power plane.

A 3D integrated circuit package is provided. The 3D integrated circuit package includes a substrate structure having a first surface and a second surface opposite to the first surface, a high-power die over the substrate structure, a lower-power die over the high-power die, a first interposer between the first surface of the substrate structure and the high-power die, and a second interposer between the high-power die and the lower-power die. The substrate structure includes a thermal enhancement portion located under the high-power die, and at least one of a thermal conductivity or a geometry of the thermal enhancement portion is different from other portions of the substrate structure. A substrate structure of the 3D integrated circuit package is also provided.

Multi-die bridge assemblies and methods for three-dimensional packaging. The architectures assemble a bridge component with two or more integrated circuit die to thereby create a multi-die (MD) bridge assembly. The means for attaching the bridge component to the dies can be hybrid bonding, solder bumps, thermal compression bonding, or a combination thereof. The created MD bridge assembly can be subjected to performance testing prior to attachment to a substrate. Attaching the MD bridge assembly to the substrate can include fitting the bridge component portion into a cavity in the substrate and attaching the bridge component to a cavity floor with another plurality of attachment options.

Embodiments are directed to an integrated circuit with multiple dies connected in a die-to-die (D2D) configuration. The integrated circuit can include a first die and a second die connected to the first die via a D2D interface circuit in the D2D configuration forming a D2D structure with the first die. The D2D interface can connect a first plurality of superlanes of the first die with a second plurality of superlanes of the second die for streaming data between the first die and the second die along a first direction or a second direction orthogonal to the first direction.

Disclosed herein is an integrated circuit die stack and an integrated circuit die package assembly having the integrated circuit die stack. The integrated circuit die stack includes first plurality of integrated circuit dice disposed in a first tier of the die stack, and the first plurality of integrated circuit dice include a first integrated circuit die and a bridge die. The integrated circuit die stack further includes a second plurality of integrated circuit dice disposed in a second tier of the die stack, and the second plurality of integrated circuit dice are stacked vertically above the first plurality of the integrated circuit dice of the first tier and include a second integrated circuit die and a third integrated circuit die. The bridge die couples with both the second integrated circuit die and the third integrated circuit die.

Various aspects of the present disclosure set forth IC dies, microelectronic assemblies, as well as related devices and packages. One aspect relates to disaggregating 3D monolithic memory and compute functions to enable tight coupling for fast memory access at high bandwidth. Another aspect relates to microelectronic assemblies relate to nano-TSVs with 3D monolithic memory. Further aspects relate to die stitching and the use of glass carrier structures in microelectronic assemblies. Various aspects disclosed herein advantageously provide a robust set of implementations that may enable significant improvements in terms of optimizing performance of individual IC dies, microelectronic assemblies including one or more of such dies, and IC packages and devices including one or more of such microelectronic assemblies.

Embodiments of the disclosure provide a semiconductor package including a first integrated circuit die having a first side and a second side opposite the first side, a first source / drain, a first interconnect structure disposed on the first side, a second interconnect structure disposed on the second side, and a first power rail extending between the first source / drain and the second interconnect structure. The package includes a second integrated circuit die disposed adjacent the first integrated circuit die, the second integrated circuit die having a first side and a second side, a second source / drain, a third interconnect structure disposed on the first side of the second integrated circuit die, a fourth interconnect structure disposed on the second side of the second integrated circuit die, and a second power rail extending between the second source / drain and the fourth interconnect structure, and an edge interconnect feature having a first end contacting the first interconnect structure and a second end contacting the third interconnect structure.

Various embodiments of the present disclosure are directed towards an image sensor comprising a pixel with a dual-PD layout for enhanced scaling down. The pixel spans a first integrated circuit (IC) die and a second IC die stacked with the first IC die. The pixel comprises a plurality of photodetectors in the first IC die, and further comprises a plurality of pixel transistors split amongst the first IC die and the second IC die. The plurality of photodetectors are grouped into one or more pairs, each having the dual-PD layout. A DTI structure completely and individually surrounds the plurality of photodetectors, and further extends completely through a substrate within which the plurality of photodetectors are arranged. As such, the DTI structure completely separates the plurality of photodetectors from each other.

Apparatus and method for detachably connecting at least one optical fiber of a detachable photonic plug to a photonic integrated circuit (PIC). The detachable photonic plug comprises: a detachable plug die; an optically transparent spacer coupled to the detachable plug die; and at least one optical fiber held between the detachable plug die and the spacer. On the PIC side, apparatus includes a receptacle adapted to receive a detachable photonic plug adapted to couple at least one optical fiber to a photonic integrated circuit (PIC); and a photonic bump of the PIC, the photonic bump having a least one fine alignment feature. The method comprises permanently mounting a receptacle over at least a portion of the PIC; after completion of mounting, inserting the detachable photonic plug into the receptacle; and after the detachable photonic plug is inserted in the receptacle, securing the detachable photonic plug in the receptacle.

A semiconductor device has a package substrate, a system-on-chip (SoC) die, and a power management integrated circuit (PMIC) die, arranged in a vertical stack. The SoC die is disposed on a first surface of the package substrate, and the PMIC die is mechanically coupled to a second surface of the package substrate. The PMIC die is electrically coupled to the SOC die via first via connectors of the package substrate and configured to provide DC power to the SOC die via DC connectors electrically coupled to the via connectors of the package substrate. The PMIC die includes thin film inductors, corresponding to the DC connectors, on a surface of the PMIC die and located adjacent to the second surface of the package substrate.

A leadframe includes first leads and second leads, wherein each lead of the first and second leads has an upper surface. First and second silver spots are provided on the upper surface of each lead of the first and second leads. An integrated circuit die has a front surface including first and second interconnection pads. A first pillar is mounted to each first interconnection pad, and second pillar is mounted to each second interconnection pad. The integrated circuit die is mounted in flip chip orientation to the leadframe with the first pillars soldered to the first silver spots and the second pillars soldered to the second silver spots. A resin body encapsulates the integrated circuit die mounted to the leadframe.

A packaged integrated circuit device includes a die that includes integrated radio frequency (RF) circuitry. The packaged integrated circuit device also includes a package substrate including metal layers electrically connected to the RF circuitry. The packaged integrated circuit device further includes an impedance adapter electrically connected to the RF circuitry and disposed between the die and the package substrate. The impedance adapter includes a passive component disposed on or in a body of the impedance adapter.

A method for fabricating a photonic integrated circuit (PIC), where the method includes providing a first PIC die including a first optical component covered by a first dielectric layer; performing a location specific ion beam planarizing of the first dielectric layer to form a first planarized surface; providing a second PIC die including a second optical component covered by a second dielectric layer; performing a planarizing of the second dielectric layer to form a second planarized surface; and bonding the first planarized surface of the first PIC die to the second planarized surface of the second PIC die to form a three dimensional (3D) stacked PIC die.

The invention provides an OIO core particle and an AI computing cluster, which are applied to the technical field of photoelectric transmission, and the OIO core particle comprises an optical chip, an electric chip and a micro-control chip or a micro-control application-specific integrated circuit. An optical chip, an electric chip and a control unit are packaged into an OIO core particle, the core particle works independently as an OIO, and the bandwidth and linearity of a system are improved by adopting an analog light and electric equalization technology in the optical chip and the electric chip. And the core particles are applied to a Scale-up network in the node and are used for interconnection between GPUs (Graphics Processing Unit). Compared with a copper cable interconnection scheme, the method has the advantages that the interconnection distance can be greatly increased, and the scale of a Scale-up network for GPU interconnection is expanded; compared with the existing optical module interconnection scheme, the optical module interconnection method has the advantages of low time delay, low power consumption, high bandwidth density and high reliability; the chip particle interconnection can adapt to the diversity requirements of AI chips and systems, and can be integrated into their systems by clients according to their own requirements.

A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, the 3D IC comprises a first IC die comprising a first substrate, a first interconnect structure disposed over the first substrate, and a first through substrate via (TSV) disposed through the first substrate. The 3D IC further comprises a second IC die comprising a second substrate, a second interconnect structure disposed over the second substrate, and a second TSV disposed through the second substrate. The 3D IC further comprises a bonding structure arranged between back sides of the first IC die and the second IC die opposite to corresponding interconnect structures and bonding the first IC die and the second IC die. The bonding structure comprises conductive features disposed between and electrically connecting the first TSV and the second TSV.

In one embodiment, a base die apparatus includes a conformal power delivery structure comprising a first electrically conductive layer defining one or more recesses, and a second electrically conductive layer at least partially within the recesses of the first electrically conductive layer and having a lower surface that generally conforms with the upper surface of the first electrically conductive layer. The conformal power delivery structure also includes a dielectric material between the surfaces of the first electrically conductive layer and the second electrically conductive layer that conform with one another. The conformal power delivery structure may be connected to connection pads of the base die apparatus, e.g., to provide power delivery to integrated circuit (IC) chips connected to the base die apparatus. The base die apparatus also includes bridge circuitry to connect IC chips with one another.

A method for assembling a photonic computing system includes attaching a photonic source to a support structure, and attaching a photonic integrated circuit to the support structure. The photonic source includes a first laser die on a substrate configured to provide a first optical beam, and a second laser die on the substrate configured to provide a second optical beam. The photonic integrated circuit includes a first waveguide and a first coupler coupled to the first waveguide, and a second waveguide and a second coupler coupled to the second waveguide. The method includes attaching a plurality of beam-shaping optical elements to the support structure, the substrate, or the photonic integrated circuit, in which the attaching includes aligning a first beam-shaping optical element during attachment so that the first optical beam is coupled to the first coupler, and aligning a second beam-shaping optical element during attachment so that the second optical beam is coupled to the second coupler.

Embodiments of the present disclosure provide a microelectronic assembly comprising: an integrated circuit (IC) die in a first layer and a plurality of IC dies in a second layer, at least two adjacent IC dies in the plurality being electrically coupled along their proximate edges by the IC die. The first layer and the second layer are electrically and mechanically coupled by interconnects having a pitch of less than 10 micrometers between adjacent interconnects, and the IC die comprises capacitors and voltage regulator circuitry.

A system includes a substrate comprising a first circuit. The system also includes an integrated circuit formed in a first die disposed on the substrate. The integrated circuit includes at least a processor, a controller, and a first memory interface. The first memory interface is located in a first edge of the first die and is configured to couple to the first circuit. The system also includes a first buffer circuit formed in a second die disposed on the interposer substrate adjacent to the first edge of the first die. The first buffer circuit includes a second memory interface configured to couple to the first connection circuit. The system further includes multiple memory modules disposed on the second die. Each of the multiple memory modules at least partially share the second memory interface to communicate with the integrated circuit.

In a stacked integrated circuit device, there are two components, one in a first of the die and another in a second of the die. Each of the components is provided with two output connections, one leading above and one leading below the die, and two input connections, one leading above and one leading below the die, either of the two die. As a result of the redundancy, both die may be used in either position in the stacked structure. If either of the die is used as the top die, it sends data on its second output path and receives data on its second input path. On the other hand, when one of the die is used as the bottom die, it sends data on its first output path and receives data on its first input path. In this way, the same design may be used for the connections between each of the die.

A packaged integrated circuit (IC) (300) including a package substrate (110). The package substrate includes pins (321); a first metal layer (323) on the pins; a second metal layer (325) on the first metal layer; vias (322, 324, 326) on the second metal layer; an insulation material (308a, 308b) covering the pins, the first metal layer, the second metal layer, and the vias, and exposing surfaces of the pins and the vias. The packaged IC further includes a semiconductor die (101) on the package substrate, the semiconductor die having a surface (301) opposing the second metal layer; metal posts (305a, 305b) coupled between the semiconductor die and the exposed surfaces of the vias (326); and a mold compound (304, 304a) covering the semiconductor die and the metal posts, in which the surface is separated from the second metal layer (325) by the insulation material (308a) and the mold compound (304a).