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Low temperature process of preparing RE magnetic semiconductor of Mg-doped nanometer zine oxide line

A technology of manganese-doped zinc oxide and dilute magnetic semiconductor, applied in the direction of zinc oxide/zinc hydroxide, etc., can solve problems such as relatively little research

Inactive Publication Date: 2006-08-02
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

Most of the research so far has focused on bulk materials or thin films, and there are relatively few studies on low-dimensional or one-dimensional scales.

Method used

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  • Low temperature process of preparing RE magnetic semiconductor of Mg-doped nanometer zine oxide line
  • Low temperature process of preparing RE magnetic semiconductor of Mg-doped nanometer zine oxide line
  • Low temperature process of preparing RE magnetic semiconductor of Mg-doped nanometer zine oxide line

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Embodiment Construction

[0021] 1. First cut the silicon wafer into small pieces with a size of 1.5*2cm with a diamond knife, and put them in a petri dish. Pour alcohol with a purity of 99.5% into the culture, subject to complete immersion of the silicon wafer. After soaking for 10 minutes, the silicon wafers were taken out and air-dried in the air for later use.

[0022] 2. Take pure zinc powder (purity: 99.9%) and manganese chloride powder (purity: 99.9%) and mix them in a weight ratio of 1:2. The mixed powder is ground in a mortar and ground for 20 minutes to achieve uniform mixing, and it is used as a raw material for later use.

[0023] 3. Turn on the tube furnace, raise the temperature of the tube furnace to 500°C and maintain this temperature throughout the operation. When the temperature of the tube furnace reaches 500° C., the sample chamber used for reaction in the tube furnace, that is, one end of the quartz tube is connected to argon protection. Open the valve of the argon cylinder, and...

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Abstract

The present invention provides one low temperature process of preparing RE magnetic semiconductor of Mg-doped nanometer zinc oxide line, and belongs to the field of nanometer material preparing technology. The technological process includes the following steps: cutting silicon wafer into chips with diamond cutter and setting in culture dish; mixing pure zinc powder and manganese chloride powder in the weight ratio of 1:3 to 1:1; reaction in a tubular furnace to obtain the yellow product deposited on the silicon chip; and observing the deposited nanometer line on the silicon chip with a scanning electronic microscope. The present invention is superior in that the prepared Mg-doped nanometer zinc oxide line has diameter of 50 nm, smooth surface, high yield and excellent magnetic performance.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular provides a method for preparing manganese-doped zinc oxide nanowire dilute magnetic semiconductor at low temperature, and provides a reliable low-temperature preparation technology for the preparation of one-dimensional nanometer dilute magnetic semiconductor. Under low temperature and non-catalytic conditions, the high-yield and controllable growth of one-dimensional manganese-doped zinc oxide nanowires is realized, and the prepared nanowires also exhibit abnormal magnetic behavior. Background technique [0002] Modern information technology realizes the storage and processing of information. The storage of information utilizes the magnetic moments of magnetic materials, while the processing of information relies on the charge movement of carriers in semiconductor chips. The emergence of dilute magnetic semiconductor is a semiconductor device that integrates ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02
Inventor 张跃张晓梅顾有松黄运华齐俊杰廖庆亮
Owner UNIV OF SCI & TECH BEIJING
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