P type doping ZnO based rare magnetic semiconductor material and method of producing the same

A dilute magnetic semiconductor, p-type technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, magnetic objects, etc., can solve the problems of p-type doping difficulties, and achieve high carrier concentration, simple technology, and low cost. Effect

Active Publication Date: 2008-05-21
ZHEJIANG UNIV +1
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But for ZnO, there has always been a defect that p-type doping is difficult, how to explore an effective way to introduce vacancies has become the difficulty of this research

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • P type doping ZnO based rare magnetic semiconductor material and method of producing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1: preparation Zn 0.95 co 0.05 O dilute magnetic semiconductor powder

[0028] 1) Add zinc acetate (5.21g) and cobalt acetate (0.31g) with a molar percentage of 95:5 to 50ml of ethylene glycol methyl ether, and then add 0.5ml of ethanolamine to form a solution with a concentration of 0.5mol / L; Stir at room temperature until completely dissolved, continue to stir for 12 hours, and then stand and age for 24 hours to obtain a transparent and uniform sol;

[0029] 2) Put the sol in an oven at 100°C for 24 hours to obtain a gel;

[0030] 3) heat-treat the gel at 300°C for 3 hours, and cool with the furnace to obtain the desired Zn 0.95 co 0.05 O dilute magnetic semiconductor powder.

Embodiment 2

[0031] Embodiment 2: preparation Zn 0.94 co 0.05 Na 0.01 O dilute magnetic semiconductor powder

[0032] 1) Add zinc acetate (5.16g), cobalt acetate (0.31g) and sodium acetate (0.02g) with a molar percentage of 94:5:1 to 50ml of ethylene glycol methyl ether, and then add 0.5ml of ethanolamine to form A solution with a concentration of 0.5mol / L; after stirring at room temperature until completely dissolved, continue to stir for 15 hours, and then stand and age for 36 hours to obtain a transparent and uniform sol;

[0033] 2) Place the sol in an oven at 120°C for 24 hours to obtain a gel;

[0034] 3) The gel was heat-treated at 350°C for 5 hours, and cooled with the furnace to obtain the desired Zn 0.94 co 0.05 Na 0.01 O dilute magnetic semiconductor powder.

Embodiment 3

[0035] Embodiment 3: preparation Zn 0.8 co 0.15 Na 0.5 O dilute magnetic semiconductor film

[0036] 1) Add zinc acetate (4.39g), cobalt acetate (0.93g) and sodium acetate (0.1g) with a molar percentage of 80:15:5 to 50ml of ethylene glycol methyl ether, and then add 0.5ml of ethanolamine to form A solution with a concentration of 0.5mol / L; after stirring at room temperature until completely dissolved, continue to stir for 12 hours, and then stand and age for 24 hours to obtain a transparent and uniform sol;

[0037] 2) Add the colloid solution dropwise on the pre-cleaned quartz glass substrate, coat the colloid evenly by rotating the substrate on a spin coater, and preheat at 100°C for 3 minutes;

[0038] 3) Repeat the coating and preheating process 20 times to complete the pre-coating;

[0039] 4) heat-treat the pre-coated quartz glass substrate at 300°C for 3 hours, and cool with the furnace to obtain the required Zn 0.8 co 0.15 Na 0.5 O dilute magnetic semiconductor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a p-type doped ZnO-based diluted magnetic semiconductor material and the preparation method. The material molecular structure formula is ZnTMyxO, in which Tm represents transition metal element, Co, Ni, Mn and other elements, x=0-10%, y=0-20%. Method is that zinc acetate, sodium acetate and transition metal salt are dissolved in ethylene glycol monomethyl ether as precursor; then ethanol is added as stabilizer; after stirring, the stable sol is formed. After the sol being dried and heat treated, the power sample is obtained; or by spin coating, the sol is coated uniformly on the Si wafer cleaned in advance or other substrates (quartz glass, sapphire, SiC and other materials), after being dried and heat treated, the thin film sample is obtained. The sol-gel method of preparing material has the advantage of simple technology, low cost, and obtaining easily large area thin films; based on the preparation of the room-temperature ferromagnetic ZnO-based diluted magnetic semiconductor, the Na ion is introduced successfully to obtain the p-type doping; therefore the magnetic property is improved, and by regulating concentration of the Na ion, the magnetic property is controlled.

Description

technical field [0001] The invention relates to a p-type doped ZnO-based dilute magnetic semiconductor material and a preparation method. ZnO-based dilute magnetic semiconductor powders and thin films with room temperature ferromagnetism are mainly prepared by sol-gel method combined with co-doping approaches (such as transition metal elements and Na co-doping). Background technique [0002] The modern information industry mainly uses the degree of freedom of electrons in semiconductor devices to process and transmit information, and storage devices such as magnetic tapes, hard disks, and magneto-optical disks use the degree of freedom of electrons to store information. How to combine these two properties to explore new functional materials and further enhance the performance of semiconductor and magnetic devices will be the goal of the next development. The main reason why the spin of carriers in traditional semiconductor materials is not fully utilized is that most of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/193H01F1/40H01F41/14C01G9/02C23C18/00H01L29/22H01L21/368H01L43/10H01L43/12
Inventor 严密顾浩马天宇罗伟
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap