Oxide lanthanon magnetic semiconductor/ferroelectric heterogeneous structure and its making method

A technology of dilute magnetic semiconductor and heterostructure, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as non-volatile characteristics, improve integration and data storage capabilities, and have good application prospects Effect

Inactive Publication Date: 2008-09-10
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the traditional metal / insulator / diluted magnetic semiconductor field-effect transistor structure, when the applied voltage is withdrawn, the oxide dilute magnetic semiconductor returns to the state before being modulated. To maintain the modulated state, the external voltage must be applied all the time. , so that the true sense of non-volatile characteristics cannot be achieved

Method used

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  • Oxide lanthanon magnetic semiconductor/ferroelectric heterogeneous structure and its making method
  • Oxide lanthanon magnetic semiconductor/ferroelectric heterogeneous structure and its making method
  • Oxide lanthanon magnetic semiconductor/ferroelectric heterogeneous structure and its making method

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Effect test

Embodiment 1

[0040] Example 1: Zn prepared by pulsed laser deposition 0.99 mn 0.01 O / Pb(Zr 0.53 Ti 0.47 )O 3 heterostructure, comprising the following steps:

[0041] (1) Target and substrate installation

[0042] In a vacuum chamber, the ZnO target material doped with manganese 1% and Pb(Zr 0.53 Ti 0.47 )O 3 The target is installed on a multi-target rack, and the Si substrate is cleaned and installed on the substrate rack, so that the direction of the laser beam is aligned with the manganese-doped ZnO target, and the distance between the substrate and the target is adjusted to 58mm.

[0043] (2) vacuuming

[0044] Turn on the mechanical pump and the molecular pump in turn to pump the pressure in the vacuum chamber to 1.5*10 -5 Pa.

[0045] (3)Laser coating

[0046] Turn on the YAG solid-state laser (the laser wavelength is 532nm), adjust the energy of the single pulse of the laser to 230mJ, so that the energy density of the laser single pulse is 7J / cm 2 , the laser repetition ...

Embodiment 2

[0047] Embodiment 2: Sol-gel method prepares Sn 0.99 mn 0.01 o 2 / Pb(Zr 0.53 Ti 0.47 )O 3 Heterogeneous structure, the steps are as follows:

[0048] (1) Preparation of Sn 0.99 mn 0.01 o 2 sol

[0049] To analyze pure Sn(CHCOO) 4 2H 2 O and Mn(CHCOO) 2 4H 2 O is a precursor, it is dissolved in the mixture (solvent) of ethylene glycol methyl ether and diethanolamine and is made into the solution that 50ml concentration is 0.4mol / l, wherein the molar ratio of diethanolamine and tin is 1: 1, and then use The system was stirred at 90° C. for 5 hours with a magnetic stirrer to obtain a transparent sol. The sol was filtered, and then placed in a thermostat at a temperature of 50° C. for 1 day and set aside.

[0050] (2) Preparation of Pb(Zr 0.53 Ti 0.47 )O 3 sol

[0051] The raw materials used are analytically pure lead acetate, zirconium nitrate and tetrabutyl titanate. According to the molar ratio of zirconium and titanium of 53:47, the raw materials are dissolved...

Embodiment 3

[0058] Embodiment 3: Preparation of Sn by pulsed laser deposition method 0.99 mn 0.01 o 2 / Pb(Zr 0.53 Ti 0.47 )O 3 Heterogeneous structure, the steps are as follows:

[0059] (1) Target and substrate installation

[0060] In a vacuum chamber, the manganese-doped 1% SnO 2 Target and Pb(Zr 0.53 Ti 0.47 )O 3 The target is installed on the multi-target rack, and the Si silicon substrate is cleaned and installed on the substrate rack, so that the direction of the laser beam is aligned with the manganese-doped SnO 2 For the target, adjust the distance between the substrate and the target to 55mm.

[0061] (2) vacuuming

[0062] Turn on the mechanical pump and the molecular pump in turn to pump the pressure in the vacuum chamber to 1.5*10 -5 Pa.

[0063] (3)Laser coating

[0064] Then turn on the YAG solid-state laser, adjust the energy of the single pulse of the laser to 280mJ, so that the energy density of the laser single pulse is 10J / cm 2 , the laser repetition fre...

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PUM

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Abstract

The invention discloses an oxide diluted magnetic semiconductor/ferroelectric heterojunction structure which consists of the following three layers: a base layer is a substrate; a middle layer is an oxide diluted magnetic semiconductor film and an upper layer is a ferroelectric film. The substrate is Si, sapphire, SrRuO3 or other perovskite oxide substrates; the oxide diluted magnetic semiconductor film is large energy gap oxide films of ZnO, TiO2 or SnO2 doping with transition metal elements of Mn, Fe, Co, Ni or Cr; the ferroelectric film is films of lead zirconate titanate, Nd-Bi titanate or barium strontium titanate. The invention also discloses two preparation methods of the oxide diluted magnetic semiconductor/ferroelectric heterojunction structure, namely, a pulsed laser deposition method and a sol-gel method. The oxide diluted magnetic semiconductor/ferroelectric heterojunction structure can carry out non-volatile modulation of ferromagnetism under the effect of an applied electric field and can be widely applied to the fields of electronic computers, spin electronics and non-volatile memorizers.

Description

technical field [0001] The invention belongs to the fields of spintronics, semiconductor physics, ferroelectric physics and material physics, and particularly relates to an oxide that can be non-volatilely modulated by an external electric field on the ferromagnetism of oxide dilute magnetic semiconductors Diluted magnetic semiconductor / ferroelectric heterostructures and methods for their preparation. Background technique [0002] Based on the digital circuit that can maintain its logic state (that is, non-volatile) under the frequent switching state of the power supply, it will be possible to develop electronic devices such as a new generation of electronic computers. Although the operation of such electronic computers looks the same as ordinary computers, it is Its power is actually off most of the time, a feature that will revolutionize the way we use digital circuits. Electronic devices based on non-volatile digital circuits will have the characteristics of good stabili...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/00H01L29/66H01L21/00
Inventor 王金斌何春钟向丽周益春郑学军
Owner XIANGTAN UNIV
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