A ZNO-based dilute magnetic semiconductor thin film with intrinsic ferromagnetism and its preparation method

A dilute magnetic semiconductor and ferromagnetic technology, which is applied in the manufacture of semiconductor/solid-state devices, the manufacture/processing of electromagnetic devices, and vacuum evaporation coating, etc. The effect of large area and large-scale production, reducing environmental pollution and reducing growth temperature

Active Publication Date: 2011-12-07
江苏先进无机材料研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the ferromagnetism of the transition metal itself or the compound formed with ZnO introduced by doping, it

Method used

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  • A ZNO-based dilute magnetic semiconductor thin film with intrinsic ferromagnetism and its preparation method
  • A ZNO-based dilute magnetic semiconductor thin film with intrinsic ferromagnetism and its preparation method
  • A ZNO-based dilute magnetic semiconductor thin film with intrinsic ferromagnetism and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] ZnO films were doped with 3 mol% Er and 2% mol Al (Zn 0.95 Er 0.03 al 0.02 O) as an example:

[0029] (1) Zn was prepared by a standard isostatic solid-state reaction synthesis process 0.95 Er 0.03 al 0.02 O target. Press Zn with electronic balance 0.95 Er 0.03 al 0.02 The stoichiometric ratio of the corresponding elements of O Weigh high-purity (≥99.99%) ZnO (38.6603g), Er 2 o 3 (2.8699g)Al 2 o 3 (0.5098g), after being fully mixed, pre-pressed (50MPa), then cold isostatic pressed (200MPa), and finally placed in a tubular electric furnace and gradually heated to 1000 ° C, and kept for 48 hours.

[0030] (2) The quartz glass substrate is cleaned with N 2 Blow dry and place in the reaction chamber of an inductively coupled plasma-enhanced physical vapor deposition device.

[0031] (3) Pump the background vacuum of the inductively coupled plasma enhanced physical vapor deposition device system to ≤5×10 -5 Pa, heat the substrate to 300°C, then pump the vacuum...

Embodiment 2

[0041] ZnO films were doped with 2% mol Er and 1% mol Al (Zn 0.97 Er 0.02 al 0.01 O) as an example:

[0042] (1) Zn was prepared by a standard isostatic solid-state reaction synthesis process 0.97 Er 0.02 al 0.01 O target. Press Zn with electronic balance 0.97 Er 0.02 al 0.01 The stoichiometric ratio of the corresponding elements of O weighs high-purity (≥99.99%) ZnO (39.4742g), Er 2 o 3 (1.9126g), Al 2 o 3 (0.2549g), after being fully mixed, pre-pressed (50MPa), then cold isostatic pressed (200MPa), and finally placed in a tubular electric furnace and gradually heated to 1100 ° C, and kept for 48 hours.

[0043] (2) Clean the Si substrate with N 2 Blow dry and place in the reaction chamber of an inductively coupled plasma-enhanced physical vapor deposition device. The inductively coupled plasma enhanced physical vapor deposition device system, i.e. ICP-PVD system, such as figure 1 shown.

[0044] (3) Pump the background vacuum of the inductively coupled plasma...

Embodiment 3

[0050] ZnO films were doped with 1% mol Er and 1% mol Al (Zn 0.98 Er 0.01 al 0.01 O) as an example:

[0051] (1) Zn was prepared by a standard isostatic solid-state reaction synthesis process 0.98 Er 0.01 al 0.01 O target. Press Zn with electronic balance 0.98 Er 0.01 al 0.01 The stoichiometric ratio of the corresponding elements of O weighs high-purity (≥99.99%) ZnO (39.8811g), Er 2 o 3 (0.9563g), Al 2 o 3 (0.2549g), after being fully mixed, pre-pressed (50MPa), then cold isostatic pressed (200MPa), and finally placed in a tubular electric furnace and gradually heated to 1200 ° C, and kept for 48 hours.

[0052] (2) Clean the SiC substrate, dry it with N2 and put it into the reaction chamber of the inductively coupled plasma enhanced physical vapor deposition device. The inductively coupled plasma enhanced physical vapor deposition device system, i.e. ICP-PVD system, such as figure 1 shown.

[0053] (3) Inductively coupled plasma enhanced physical vapor deposit...

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Abstract

The invention belongs to the technical field of semiconductor film materials and relates to a rare-earth metal ion doped ZnO diluted magnetic semiconductor film with high quality, low resistivity and intrinsic ferromagnetism and a preparation method thereof. The chemical composition of the film provided by the invention is in accordance with the general chemical formula, namely, Zn1-x-yErxAlyO, wherein x is greater than 0 and less than or equal to 0.03, and y is greater than 0 and less than or equal to 0.02. In the method provided by the invention, a way of rare-earth metal ion Er and Al donor doping is adopted, a ceramic target is utilized as a base and the ZnO-based diluted magnetic semiconductor film with intrinsic ferromagnetism is prepared by adopting an ICP-PVD (inductively coupled plasma-physical vapor deposition) technique. By adopting the ICP-PVD technique in the invention, the metal ion Er can be evenly doped into the ZnO crystal lattice; and meanwhile, the carrier concentration of the ZnO film doped with Al can be obviously improved, thus the ferromagnetic transformation among Er<2+> ions can be effectively adjusted and all films have intrinsic ferromagnetism and anomalous Hall effect above room temperature. Therefore, the semiconductor film provided by the invention can be widely applied to spinning electron devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin film materials, and relates to a rare earth metal ion-doped ZnO dilute magnetic semiconductor thin film with high quality, low resistivity and intrinsic ferromagnetism and a preparation method thereof. Background technique [0002] With the development of science and technology, human beings have entered into a highly electronic and information society. The processing, storage and transmission of information will require unprecedented scale and speed. In the semiconductor industry, semiconductor devices dominated by Si materials have been developed for more than half a century. With the continuous shrinking of the feature size of semiconductor devices, the processing technology of a single transistor has gradually reached the dual limits of physics and technology. How to realize the above-mentioned leap in electronic information technology has become one of the major scientific problem...

Claims

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Application Information

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IPC IPC(8): H01L43/10H01L43/12H01L21/203C23C14/08C23C14/34
Inventor 刘学超陈之战杨建华施尔畏
Owner 江苏先进无机材料研究院
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