Yttrium-doped aluminum nitride diluted magnetic semiconductor quasi-array microtube and fabrication method of microtube

A technology of dilute magnetic semiconductors and micron tubes, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of consuming a lot of time and financial resources, and achieve the effects of less energy consumption, high purity, and good crystallinity

Inactive Publication Date: 2013-02-06
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this report, the alloy block of Al and Y was used to prepare AlN:Y nano-hexagonal prism morphology in the improved DC arc discharge equipment. However, the sample preparation of this method requires a fixed substrate, and the customization of the reaction raw material alloy block also requires Spend a lot of time and money

Method used

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  • Yttrium-doped aluminum nitride diluted magnetic semiconductor quasi-array microtube and fabrication method of microtube
  • Yttrium-doped aluminum nitride diluted magnetic semiconductor quasi-array microtube and fabrication method of microtube
  • Yttrium-doped aluminum nitride diluted magnetic semiconductor quasi-array microtube and fabrication method of microtube

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027]Example 1 The best overall process for preparing Y-doped AlN dilute magnetic semiconductor quasi-array microtube structure

[0028] With high-purity Al and Y powder (purity 99.99%), put the pre-pressed block in the graphite crucible, put it into the copper pot anode in the reaction chamber of the DC arc discharge device, and the cathode tungsten rod is opposite to the copper pot anode Placement; first vacuumize the reaction chamber until the air pressure is lower than 1Pa, fill it with high-purity nitrogen (volume fraction greater than 99.99%), repeat vacuuming to lower than 1Pa to wash away the residual air in the vacuum system, and then fill it with high-purity nitrogen Discharge after reaching the preset pressure of 10kPa. When starting the arc, set the arc current to 150A, keep the arc stable at 15V, and the length of the positive arc column area is 0.5cm (keeping the length of the arc column area stable is beneficial to the stability of the arc characteristic curve)...

Embodiment 2

[0030] Example 2 The whole process of preparing Y-doped AlN dilute magnetic semiconductor quasi-array microtubes.

[0031] With high-purity Al and Y powder (purity 99.99%), put the pre-pressed block in the graphite crucible, put it into the copper pot anode in the reaction chamber of the DC arc discharge device, and the cathode tungsten rod is opposite to the copper pot anode Placement; first vacuumize the reaction chamber until the air pressure is lower than 1Pa, fill it with high-purity nitrogen (volume fraction greater than 99.99%), repeat vacuuming to lower than 1Pa to wash away the residual air in the vacuum system, and then fill it with high-purity nitrogen Discharge after reaching the preset pressure of 20kPa. When starting the arc, set the arc current to 100A, keep the arc stable at 20V, the length of the positive arc column area is 1cm, and cut off the power supply after about 3 minutes of discharge. After the reaction, keep the circulating water flowing continuously...

Embodiment 3

[0032] Example 3 The whole process of preparing Y-doped AlN dilute magnetic semiconductor quasi-array microtubes.

[0033] With high-purity Al and Y powder (purity 99.99%), put the pre-pressed block in the graphite crucible, put it into the copper pot anode in the reaction chamber of the DC arc discharge device, and the cathode tungsten rod is opposite to the copper pot anode Placement; first vacuumize the reaction chamber until the air pressure is lower than 1Pa, fill it with high-purity nitrogen (volume fraction greater than 99.99%), repeat vacuuming to lower than 1Pa to wash away the residual air in the vacuum system, and then fill it with high-purity nitrogen Discharge after reaching the preset pressure of 15kPa. When starting the arc, set the arc current to 120A, keep the arc stable at 25V, and the length of the positive arc column area is 1.5cm, cut off the power supply after about 5 minutes of discharge. After the reaction, keep the circulating water flowing continuous...

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Abstract

The invention discloses an yttrium-doped aluminum nitride diluted magnetic semiconductor quasi-array microtube and a fabrication method of the microtube, which belong to the technical field of semiconductor spinning electron device materials. The yttrium-doped aluminum nitride diluted magnetic semiconductor quasi-array microtube is in a hexagon column structure, the outside surface of the microtube is smooth, and uneven folds are formed in the microtube, so that a multi-hole structure is formed. The fabrication method comprises the steps that Al powder and Y powder are taken as raw materials, nitrogen is taken as reaction gas, the fabrication is conducted in a direct-current arc plasma discharging device, a reaction chamber is vacuumed, the reaction gas is filled into the reaction chamber for discharging, the power is cut off after 3-5 minutes of the discharging reaction, and plush blocks are collected in a cathode sediment zone of a tungsten rod after standing and argon passivation. Fabricated samples are large in output, high in purity, complete in crystal form and uniform in size; the fabrication time is short; and the energy consumption and cost are low. No substrates, templates or catalyzers are needed in the fabrication process, and the fabrication method is environment-friendly and high in repeatability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor spintronic device materials, and in particular relates to a simple and efficient method for preparing non-magnetic rare earth metal element yttrium-doped aluminum nitride dilute magnetic semiconductor quasi-array microtubes. Background technique [0002] Diluted Magnetic Semiconductor (DMS) is a semiconductor device that can integrate magnetism and electricity by using the two degrees of freedom of the carrier's spin and charge at the same time. In particular, the emergence of ferromagnetic semiconductor materials has led to the development of semiconductor spintronics. The preparation of room temperature ferromagnetic semiconductor materials, efficient electron spin injection in semiconductor materials, and electron spin transport and operation in semiconductor structures have become hot topics in the field of semiconductor spintronics. DMS exhibits strong spin-dependent optical and transp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/072H01F1/40
Inventor 崔啟良丛日东祝洪洋武晓鑫贾岩谢晓君尹广超张健石蕊
Owner JILIN UNIV
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