Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

ZnO-based diluted magnetic semiconductor thin film and preparation method thereof

A technology of dilute magnetic semiconductor and thin film, applied in the field of material science

Inactive Publication Date: 2013-05-01
TSINGHUA UNIV
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there has been no report so far on the regulation of the physical properties of ZnO-based dilute magnetic semiconductors by adjusting the bandgap.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ZnO-based diluted magnetic semiconductor thin film and preparation method thereof
  • ZnO-based diluted magnetic semiconductor thin film and preparation method thereof
  • ZnO-based diluted magnetic semiconductor thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] 1) Adjust the pH value of 600mL of 1mol / L ammonium bicarbonate solution to 8.7 with ammonia water with a concentration of 28% by mass to obtain a precipitant, which is heated to 50°C in a water bath;

[0062] 2) Add 475mL of 0.5mol / L Zn(NO 3 ) 2 ·6H 2 Aqueous solution of O and 25 mL of 0.5 mol / L Co(NO 3 ) 2 Mix evenly, add the mixed solution to the precipitant obtained in step 1) with a dropper, and carry out co-precipitation reaction at 50°C for 1 hour to produce a pale pink precipitate, collect the obtained precipitate, filter the precipitate, and dry it to obtain Precursor powder II;

[0063] 3) Calcining the precursor powder II obtained in step 2) at 400°C for 1 hour to obtain ceramic powder, granulating and pressing the ceramic powder with PVA, controlling the heating rate at 3°C / min, and sintering at 1300°C 4h firing ceramic target II;

[0064] 4) Using the ceramic target II obtained in step 3) as the target, deposit a thin film (laser pulse energy 335mJ) on...

Embodiment 2

[0069] 1) With analytically pure zinc nitrate hexahydrate (Zn(NO 3 ) 2 ·6H 2 O) and cobalt nitrate hexahydrate (Co(NO 3 ) 2 ·6H 2 (2) is raw material, and citric acid is complexing agent, is dissolved in 30mL solvent ethylene glycol monomethyl ether, makes its concentration all be 0.2mol / L, stirs at normal temperature for 4 hours to obtain Sol II.

[0070] 2) Use the sol II obtained in step 1) to spin coat a film on a Si(100) / Pt(111) substrate with a rotation speed of 3000rpm and a radius of rotation of 5mm. After heat treatment at 350°C for 5min, repeat the above process until the film reaches the desired thickness , and finally annealed at 600°C for 15 minutes in a rapid heat treatment furnace to obtain a composition of Zn 0.95 co 0.05 O ZnO-based dilute magnetic semiconductor thin films.

[0071] According to the same method as above, only replace the corresponding reactant according to the composition of the product, and before the step 1) dissolving step, add magne...

Embodiment 3

[0074] 1) With analytically pure zinc nitrate hexahydrate (Zn(NO 3 ) 2 ·6H 2 O) and the manganese nitrate aqueous solution that mass percent concentration is 50% is raw material, and citric acid is complexing agent, is dissolved in the 30mL solvent ethylene glycol monomethyl ether, Zn 2+ The concentration of the solution was 0.2mol / L, and it was stirred at room temperature for 4 hours to obtain Sol III.

[0075] 2) Use the sol III obtained in step 1) to spin-coat a film on a Si(100) / Pt(111) substrate with a rotation speed of 3000rpm and a radius of rotation of 5mm. After heat treatment at 350°C for 5min, repeat the above process until the film reaches the desired thickness , and finally annealed at 600°C for 15 minutes in a rapid heat treatment furnace to obtain a composition of Zn 0.95 mn 0.05 O ZnO-based dilute magnetic semiconductor thin films.

[0076] According to the same method as above, only replace the corresponding reactant according to the composition of the pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a ZnO-based diluted magnetic semiconductor thin film and a preparation method of the ZnO-based diluted magnetic semiconductor thin film. The analyzed pure metal nitrate is taken as a raw material, and a method 1 comprises the following steps of: obtaining a doped ZnO powder body by a water solution coprecipitation method, sintering by a solid-phase method to obtain a ceramic target material, and preparing into a doped diluted magnetic semiconductor ZnO thin film by a pulsed laser deposition (PLD) method. Or the analyzed pure metal nitrate is taken as a raw material, and a method comprises the step of preparing a doped ZnO-based diluted magnetic semiconductor ZnO thin film through the technological process of preparing sol, spinning and thermally treating by a sol-gel method. The energy gap of the prepared ZnO-based thin film can be adjusted and controlled due to the doping of Mg and Cd, so that the ferromagnetism of the ZnO-base thin film can be adjusted and controlled. The Co-doped or Mn-doped ZnO-based diluted magnetic semiconductor thin film can be co-doped into the Cd, so that band gap can be reduced, and the room-temperature saturation magnetization of the thin film can be enhanced; and the band gap can be enlarged due to the codoping of Mg, so that the room-temperature saturation magnetization of the thin film can be reduced.

Description

technical field [0001] The invention belongs to the field of material science, in particular to a ZnO-based dilute magnetic semiconductor thin film and a preparation method thereof. Background technique [0002] In the modern information industry, semiconductor materials usually use the charge degree of freedom of electrons to work, and electrons have another degree of freedom which is spin. Electrons move directional in semiconductors, and their spins also carry a lot of information. If a current with high spin polarization can be obtained in semiconductor materials, the electrical properties of semiconductors can be regulated by magnetic fields. Based on this, many new multifunctional spintronics devices can be designed, and new electronic signal processing methods can be developed to greatly improve the processing efficiency of electronic information. Semiconductor spintronics is the science of how to use the degree of freedom of electron spin in semiconductors, and its...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/08C23C14/28
Inventor 林元华张玉骏罗屹东南策文
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com