AlGaN/GaN heterojunction HEMT device compatible with Si-CMOS technology and manufacturing method thereof

Abstract

The invention discloses an AlGaN / GaN heterojunction HEMT device compatible with the Si-CMOS technology and a manufacturing method thereof. The device comprises an AlGaN / GaN heterojunction epitaxial layer, a passivation layer, a gate dielectric layer, a no-gold gate electrode and a no-gold source and drain electrode. The AlGaN / GaN heterojunction epitaxial layer comprises a substrate, a nitride nucleating layer, a nitride buffer layer, a GaN channel layer, an AlGaN intrinsic barrier layer and an AlGaN heavily doped layer which are arranged from the bottom to the top in turn. The AlGaN heavily doped layer generates charges through the ionized donor to compensate the surface acceptor level of the semiconductor to suppress current collapse and forms ohmic contact with the electrodes through lowtemperature annealing. The no-gold electrodes avoid pollution of Au to the Si-CMOS process line. Current collapse of the HEMT device can be effectively suppressed, the device performance can be enhanced, the process temperature can be reduced and the process flow can be simplified by using double AlGaN layers in the AlGaN / GaN heterojunction through combination of the no-gold electrode process andthe low temperature ohm process so that the technical bottleneck of compatibility of the AlGaN / GaN heterojunction HEMT and the Si-CMOS process can be solved and the manufacturing cost of the AlGaN / GaN heterojunction HEMT can be reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a method for manufacturing an AlGaN / GaN heterojunction HEMT device compatible with a Si-CMOS process, which can be used in the fields of power electronics, microwave communication, and the like. Background technique [0002] With the development of modern weaponry and aerospace, nuclear energy, communication technology, automotive electronics, and switching power supplies, higher requirements are placed on the performance of semiconductor devices. As a typical representative of wide bandgap semiconductor materials, GaN-based materials have the characteristics of large bandgap width, high electron saturation drift velocity, high critical breakdown field strength, high thermal conductivity, good stability, corrosion resistance, and radiation resistance. Used in the production of high temperature, high frequency and high power electronic devices. In additi...

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Problems solved by technology

Then, several factors limit the processing of HEMT devices in CMOS process lines: 1. The gold contact metal used in the ohmic and Schottky contact processes of conventional HEMT devices causes Au to pollute the CMOS process line; 2. Conventional HEMT devices The ohmic process temperature is high, which causes Ga to pollute the CMOS process line, and at the same time, the high temperature cracks the AlGaN / GaN epitaxial layer on the large-size silicon substrate, reducing the product yield

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