Dual-acceptor-contained three-element solar cell

A technology of solar cells and double acceptors, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of ineffective formation of donor-acceptor phase separation, limitation of short-circuit current density of devices, and limitation of carrier transmission efficiency , to achieve the effect of increasing the light absorption range, increasing the short-circuit current density, and increasing the carrier transport speed

Inactive Publication Date: 2015-12-23
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the traditional bulk heterojunction solar cells have the following two major problems: 1, the single acceptor bulk heterojunction light absorption range is limited, which, thereby limiting the short-circuit current density of the device; 2, based on fullerene deriv

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1 (control group):

[0022] Clean the substrate composed of transparent substrate and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (5000rpm, 40s, 15nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and bake the formed film (200°C, 60min); prepare P3HT:PC on the cathode buffer layer by spin coating 61 BM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and baked (140°C, 5min); spin-coated PEDOT:PSS solution on the surface of the photoactive layer to prepare an anode buffer layer (3000rpm, 60s , 30nm); the substrate was annealed by heating and annealing on a constant temperature hot stage (150°C, 5min); metal anode Ag (100nm) was vapor-deposited on the anode buffer layer. Under standard test conditions: AM1.5, 100mW / cm 2 , the open circuit voltage of the device was measured (V OC )=0.56V, short-circuit current (J SC )=8.2mA / cm 2 , ...

Embodiment 2

[0023] Embodiment 2: (control group)

[0024] Clean the substrate composed of transparent substrate and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (5000rpm, 40s, 15nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and bake the formed film (200°C, 60min); prepare PTB7:PC on the cathode buffer layer by spin coating 61 BM (40%:60%) photoactive layer (1200rpm, 60s, 100nm); spin-coat PEDOT:PSS solution on the surface of the photoactive layer to prepare an anode buffer layer (3000rpm, 60s, 30nm); heat the substrate with a constant temperature hot stage Annealing is performed by annealing (150° C., 5 min); metal anode Ag (100 nm) is vapor-deposited on the anode buffer layer. Under standard test conditions: AM1.5, 100mW / cm 2 , the open circuit voltage of the device was measured (V OC )=0.70V, short-circuit current (J SC )=13mA / cm 2 , fill factor (FF)=0.63...

Embodiment 3

[0026] Clean the substrate composed of transparent substrate and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (5000rpm, 40s, 15nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and bake the formed film (200°C, 60min); prepare P3HT:PC on the cathode buffer layer by spin coating 61 BM:PC 71 BM (40%:10%:50%) photoactive layer (1000rpm, 25s, 220nm), and baked (140°C, 5min); spin-coated PEDOT:PSS solution on the surface of the photoactive layer to prepare the anode buffer layer ( 3000rpm, 60s, 30nm); the substrate is annealed by heating and annealing on a constant temperature hot stage (150°C, 5min); metal anode Ag (100nm) is vapor-deposited on the anode buffer layer. Under standard test conditions: AM1.5, 100mW / cm 2 , the open circuit voltage of the device was measured (V OC )=0.56V, short-circuit current (J SC )=9.2mA / cm 2 , fill factor (FF)=0.55, phot...

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Abstract

The invention, which belongs to the field of the organic polymer photovoltaic device or organic semiconductor film solar energy cell, discloses a dual-acceptor-contained three-element solar cell based on an inverse structure comprises a substrate, a transparent conductive cathode ITO, a cathode buffer layer, an optical active layer, an anode buffer layer, and a metal anode from bottom to top. The optical active layer includes the following components, by weight: 40% of electron donor, 10 to 50% of electron acceptor I, and 10% to 50% of electron acceptor II. According to the invention, with the dual electron acceptors, the light absorption waveband can be covered effectively; and on the basis of the stacking effect of acceptors, the crystallization of the thin film surface is optimized, the carrier transport is improved, the short-circuit current density of the device is enhanced, and the photoelectric conversion performance of the device is improved.

Description

technical field [0001] The invention belongs to the field of organic polymer photovoltaic devices or organic semiconductor thin-film solar cells, and in particular relates to an organic thin-film solar cell. Background technique [0002] With the explosive growth of the global energy demand, the energy problem has become the primary problem faced by the economic development of all countries. Because solar energy is clean, widely distributed, and inexhaustible, research on photovoltaic power generation to solve energy problems has become the focus and focus of research in the field of renewable energy. Currently, active layer materials can be classified into inorganic semiconductor materials and organic semiconductor materials according to the different properties of materials that make up the photoactive layer of a solar cell. Compared with inorganic semiconductor materials, organic semiconductor materials not only have relatively mild synthesis conditions and device proces...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46
CPCH10K85/215H10K30/152H10K30/211H10K30/151H10K2102/00Y02E10/549
Inventor 于军胜施薇张磊范谱
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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