Semiconductor photosensitizer AgBiS2 quantum dot and preparation method thereof

A photosensitizer and semiconductor technology, applied in the nanometer field, can solve the problems of uncontrollable quantum dot size, narrow photoresponse range, and many surface defects, and achieve the effect of excellent photoresponse ability, good crystallinity, and few surface defects

Active Publication Date: 2020-04-03
WUHAN UNIV OF SCI & TECH
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these studies have achieved certain results, quantum dots still have shortcomings such as uncontrollable size, many surface defects, and narrow photoresponse range, which are not conducive to the application in quantum dot-sensitized solar cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor photosensitizer AgBiS2 quantum dot and preparation method thereof
  • Semiconductor photosensitizer AgBiS2 quantum dot and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A semiconductor photosensitizer AgBiS 2 Quantum dots and methods for their preparation. The specific steps of the preparation method described in this embodiment are:

[0023] Step 1, containing Ag + and Bi 3+ Preparation of the Mixed Precursor Solution

[0024] According to silver salt: the ratio of the amount of substance of bismuth salt is 1: (1~2), described silver salt and described bismuth salt are mixed, obtain mixture; Then be 0.19~0.21mol / L according to concentration, the obtained The mixture is mixed with oleylamine, and stirred for 2-3 hours under the conditions of nitrogen atmosphere, 100-120°C and 500-800r / min to obtain Ag-containing + and Bi 3+ mixed precursor solution.

[0025] Step 2, the preparation of the precursor solution of sulfur

[0026] According to the concentration of 0.39~0.41mol / L, mix the sublimated sulfur and 1-octadecene, and then stir for 2~3h under the conditions of nitrogen atmosphere, 100~120℃ and 500~800r / min to prepare the pre...

Embodiment 2

[0032] A semiconductor photosensitizer AgBiS 2 Quantum dots and methods for their preparation. The specific steps of the preparation method described in this embodiment are:

[0033] Step 1, containing Ag + and Bi 3+ Preparation of the Mixed Precursor Solution

[0034] According to silver salt: the ratio of the amount of substance of bismuth salt is 1: (2~3), described silver salt and described bismuth salt are mixed, obtain mixed material; Then be 0.19~0.21mol / L according to concentration, the obtained The mixture is mixed with oleylamine, and stirred for 2-3 hours under the conditions of nitrogen atmosphere, 100-120°C and 500-800r / min to obtain Ag-containing + and Bi 3+ mixed precursor solution.

[0035] Step 2, the preparation of the precursor solution of sulfur

[0036]According to the concentration of 0.39~0.41mol / L, mix the sublimated sulfur and 1-octadecene, and then stir for 2~3h under the conditions of nitrogen atmosphere, 100~120℃ and 500~800r / min to prepare t...

Embodiment 3

[0042] A semiconductor photosensitizer AgBiS 2 Quantum dots and methods for their preparation. The specific steps of the preparation method described in this embodiment are:

[0043] Step 1, containing Ag + and Bi 3+ Preparation of the Mixed Precursor Solution

[0044] According to silver salt: the ratio of the amount of substance of bismuth salt is 1: (3~4), described silver salt and described bismuth salt are mixed, obtain mixture; Then be 0.19~0.21mol / L according to concentration, the obtained The mixture is mixed with oleylamine, and stirred for 2-3 hours under the conditions of nitrogen atmosphere, 100-120°C and 500-800r / min to obtain Ag-containing + and Bi 3+ mixed precursor solution.

[0045] Step 2, the preparation of the precursor solution of sulfur

[0046] According to the concentration of 0.39~0.41mol / L, mix the sublimated sulfur and 1-octadecene, and then stir for 2~3h under the conditions of nitrogen atmosphere, 100~120℃ and 500~800r / min to prepare the pre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
absorption coefficientaaaaaaaaaa
Login to view more

Abstract

The invention relates to a semiconductor photosensitizer AgBiS2 quantum dot and a preparation method thereof. According to the technical scheme, the method comprises the steps: mixing a silver salt and a bismuth salt at a molar ratio of 1: (1-4) to obtain a mixture; mixing the mixture with oleylamine according to the concentration of 0.19-0.21 mol / L, and stirring under the conditions of nitrogen atmosphere, 100-120 DEG C and 500-800r / min to obtain a mixed precursor solution containing Ag < + > and Bi < 3 + >; mixing sublimed sulfur and 1-octadecene according to the concentration of 0.39-0.41 mol / L and stirred under the same conditions to prepare a precursor solution of sulfur; mixing the mixed precursor solution containing Ag < + > and Bi < 3 + > and the precursor solution of sulfur according to a volume ratio of 1: (0.9-1.1) at 190-210 DEG C in a nitrogen atmosphere, and stirring for 8-10min at 500-800r / min to obtain the semiconductor photosensitizer AgBiS2 quantum dot. The product prepared by the method is controllable in size, few in surface defects and excellent in photoresponse capability, and is beneficial to application in quantum dot sensitized solar cells.

Description

technical field [0001] The invention belongs to the field of nanotechnology. Specifically relate to a kind of semiconductor photosensitizer AgBiS 2 Quantum dots and methods for their preparation. Background technique [0002] Quantum dots are an important low-dimensional semiconductor material, whose size in three dimensions is not larger than twice the exciton Bohr radius of the corresponding semiconductor material. Quantum dots are generally spherical or quasi-spherical, and their diameters are usually between 2 and 20 nm. Due to their small size, quantum dots have many different properties from bulk materials. For example, the energy band of quantum dots can be adjusted, and there are quantum size effects, quantum confinement effects, and multi-exciton effects. These characteristics make quantum dots widely used in light-emitting and light-absorbing materials for solar cells. Among them, CdSe, PbS, CuInS 2 Isoquantum dots have been extensively studied. [0003] ikB...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G29/00C09K11/74B82Y40/00
CPCC01G29/006C09K11/7407B82Y40/00C01P2004/04
Inventor 李薇馨葛静赵雷陈辉方伟何漩
Owner WUHAN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap