Yb and Er -codoped gadolinium silicate laser crystal and preparation method therefor
A laser and melt method technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve problems such as restricting the development of laser devices
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2006-11-22
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1
Abstract
Description
technical field
[0001] The invention relates to a laser crystal, in particular to a ytterbium-erbium co-doped gadolinium silicate laser crystal with a light emission wavelength of 1.55 μm and a preparation method thereof. The structural formula of the laser crystal is Yb x , Ery:Gd 2 SiO 5 , which is suitable for InGaAs diode pumping. Background technique
[0002] Er 3+ (Erbium ion) laser in the 1.55μm band has become one of the current academic hotspots. Currently Er 3+ Usually, an InGaAs diode with an emission wavelength around 980nm is used as the pump source, because Er 3+ The absorption coefficient in this band is small, and Yb is used 3+ (ytterbium ion) as Er 3+ sensitizer, Yb 3+ The absorption cross-section is large near 980nm, making the Yb 3+ to Er 3+ There is a higher energy transfer efficiency, so the introduction of Yb 3+ to sensitize Er 3+ will greatly improve Er 3+ Absorption of pump light. Er 3+ Lasers can be widely used in military, optical com...
Examples
preparation example Construction
[0019] Yb according to the present invention, Er:Gd 2 SiO 5 The preparation method of laser single crystal comprises the following steps:
[0020] ① Raw material formula
[0021] The initial raw material is Yb 2 o 3 , Er 2 o 3 , Gd 2 o 3 and SiO 2 , the raw materials are compounded according to the molar ratio x:y:1:1, where the value range of x is 0.01~0.5; the value range of y is 0.001~0.15;
[0022] ② After selecting the proportions x and y according to the above-mentioned formula, weigh each raw material, and after each raw material is fully mixed, press it into a block on a hydraulic press to form a block;
[0023] ③Then put the block into the crucible and grow Yb, Er:Gd by melt method 2 SiO 5 single crystal.
[0024] Examples of enumeration are as follows:
Embodiment 1
[0026] Will Yb 2 o 3 , Er 2 o 3 , Gd 2 o 3 and SiO 2 High-purity raw materials are weighed according to x=0.01, y=0.001. After mixing evenly, press it into a block on a hydraulic press, put it in an iridium crucible, and use the pulling method to grow the crystal, and the seed crystal is Gd 2 SiO 5 Single crystal rod, crystal growth is carried out in high-purity Ar atmosphere.
Embodiment 2
[0028] Will Yb 2 o 3 , Er 2 o 3 , Gd 2 o 3 and SiO 2 High-purity raw materials are weighed according to x=0.05, y=0.003. After mixing evenly, press it into a block on a hydraulic press, put it in an iridium crucible, and use the pulling method to grow the crystal, and the seed crystal is Gd 2 SiO 5 Single crystal rod, crystal growth is carried out in high-purity Ar atmosphere.