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Yb and Er -codoped gadolinium silicate laser crystal and preparation method therefor

A laser and melt method technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve problems such as restricting the development of laser devices

Inactive Publication Date: 2006-11-22
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the low laser output power and efficiency of lasers in this band have always restricted Er 3+ Development of Laser Devices

Method used

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  • Yb and Er -codoped gadolinium silicate laser crystal and preparation method therefor

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preparation example Construction

[0019] Yb according to the present invention, Er:Gd 2 SiO 5 The preparation method of laser single crystal comprises the following steps:

[0020] ① Raw material formula

[0021] The initial raw material is Yb 2 o 3 , Er 2 o 3 , Gd 2 o 3 and SiO 2 , the raw materials are compounded according to the molar ratio x:y:1:1, where the value range of x is 0.01~0.5; the value range of y is 0.001~0.15;

[0022] ② After selecting the proportions x and y according to the above-mentioned formula, weigh each raw material, and after each raw material is fully mixed, press it into a block on a hydraulic press to form a block;

[0023] ③Then put the block into the crucible and grow Yb, Er:Gd by melt method 2 SiO 5 single crystal.

[0024] Examples of enumeration are as follows:

Embodiment 1

[0026] Will Yb 2 o 3 , Er 2 o 3 , Gd 2 o 3 and SiO 2 High-purity raw materials are weighed according to x=0.01, y=0.001. After mixing evenly, press it into a block on a hydraulic press, put it in an iridium crucible, and use the pulling method to grow the crystal, and the seed crystal is Gd 2 SiO 5 Single crystal rod, crystal growth is carried out in high-purity Ar atmosphere.

Embodiment 2

[0028] Will Yb 2 o 3 , Er 2 o 3 , Gd 2 o 3 and SiO 2 High-purity raw materials are weighed according to x=0.05, y=0.003. After mixing evenly, press it into a block on a hydraulic press, put it in an iridium crucible, and use the pulling method to grow the crystal, and the seed crystal is Gd 2 SiO 5 Single crystal rod, crystal growth is carried out in high-purity Ar atmosphere.

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Abstract

The invention discloses an ytterbium-erbium doping gadolinium silicate crystal and preparing method, which is characterized by the following: the laser single-crystal structure formula is Ybx, Ery:Gd2SiO5, wherein x is 0.01-0.5; y is 0.001-0.15; the crystal adopts flux method growth; the Yb,Er:Gd2SiO5 crystal possesses high-sound acoustic phonon energy (1000cm-1) with large crystal field splitting, 0.86*10-20cm-1 transmitting cross-section of 1.55 mum band and 7ms fluorescent lifetime, which improves Er3+ luminous efficiency.

Description

technical field [0001] The invention relates to a laser crystal, in particular to a ytterbium-erbium co-doped gadolinium silicate laser crystal with a light emission wavelength of 1.55 μm and a preparation method thereof. The structural formula of the laser crystal is Yb x , Ery:Gd 2 SiO 5 , which is suitable for InGaAs diode pumping. Background technique [0002] Er 3+ (Erbium ion) laser in the 1.55μm band has become one of the current academic hotspots. Currently Er 3+ Usually, an InGaAs diode with an emission wavelength around 980nm is used as the pump source, because Er 3+ The absorption coefficient in this band is small, and Yb is used 3+ (ytterbium ion) as Er 3+ sensitizer, Yb 3+ The absorption cross-section is large near 980nm, making the Yb 3+ to Er 3+ There is a higher energy transfer efficiency, so the introduction of Yb 3+ to sensitize Er 3+ will greatly improve Er 3+ Absorption of pump light. Er 3+ Lasers can be widely used in military, optical com...

Claims

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Application Information

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IPC IPC(8): C30B29/34
Inventor 徐军赵广军徐晓东严成锋宗艳花徐文伟
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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