31results about How to "Large emission cross section" patented technology

The Raman laser with simple compact structure includes pump system of diode laser end face, laser cavity composed of coated laser input / output cavity mirrors, independent laser gain crystal placed in laser cavity, Raman frequency shift crystal and turning Q unit for laser. Output Raman laser is obtained from laser in quasi continuous operation. Laser gain crystal is Nd:YVO4 crystal, doping Nd3+ laser crystal or doping Yb3+:YAG etc. laser crystals, which generate laser oscillations with wavelengths near to 1.34 micro or 1.06 micro. Raman frequency shift crystal is prepared from one piece of single crystal as Raman active medium. Here, the Raman frequency shift crystal is undoped YVO4 crystal etc. in the invention, laser gain crystal and Raman frequency shift crystal are independent from each other so as to raise output power and beam quality of laser since heat effect does not occur.

The invention discloses a transparent vanadate glass and method for making same, wherein the glass is based on the conventional vanadate glass V2O5-SiO2, adding alkali metal oxide N2O+K2O+Cs2O and alkali metal hydrate CaO+BaO+SrO. The glass is prepared in environment where oxygen purity is above 99%.

The invention relates to a transparent oxyfluoride tellurite glass, which comprises the following components by mole ratio: 55-75mol% of TeO2, 5-25mol% of Al2O3, 0-18mol% of CaF2, 0-15mol% of LaF3. The oxyfluoride tellurite glass uses a traditional glass melting process for melting and molding. The oxyfluoride tellurite glass possesses excellent thermal stability, and is an ideal rare earth doped up-conversion luminescence matrix material which is capable of enhancing the permeability of the matrix, improving the treatment load of a land infiltration system and improving the denitrification efficiency, the oxyfluoride tellurite glass does not contain toxic heavy metals Pb and Cd elements which are harmful to human body and environment.

The invention discloses a dysprosium-doped strontium calcium molybdate green laser crystal. The molecular formula for the crystal is Dy<3+>:Sr2CaMoO6, which belongs to an orthorhombic system and a Pmm2 space group, crystal cell parameters are alpha=beta=gamma=90 DEG, a=8.1513 angstrom, b=5.7416 angstrom, c=5.8385 angstrom and Z=2. The invention also provides a method of preparing the above dysprosium-doped strontium calcium molybdate green laser crystal. A molten salt top-seeded solution growth method is adopted; K2Mo2O7-MoO3 serves as a fluxing agent; the growth parameters are: a cooling rate of 0.5 to 3 DEG C per day, growth temperature of 750 to 790 DEG C, and a rotation speed of 5 to 30 revolutions per minute; the Dy<3+>:Sr2CaMoO6 crystal grows; and the doping concentration of Dy<3+> is 1at.% to 15at.%. The crystal of the invention can be used as a laser working material in a solid-state laser, a flash or a laser diode is used as a pumping source, and green laser is excited and generated and outputted.

The invention relates to a lead fluoride crystal co-doped with ytterbium and alkaline and a preparation method thereof. The structural formula of the crystal is Ybx: My: PbF2, and the growth method of the crystal includes the following steps: (1) the values of x and y are determined; (2) the raw material is weighed in proportion, is fully and evenly mixed and is pressed into blocks, the blocks are put into an iraurite, platinum or plumbago crucible, PbF2 crystal is adopted as a seed crystal, growth atmosphere is high purity argon or CF4 gas, and melt growth method is adopted. Experiments show that the crystal of the invention has large absorption and emission section, long fluorescence life time and high thermal conduction.

The invention discloses a chrome iron ion double-doped complex selenium zinc sulfide laser material and a preparation method thereof. The molecular formula of the chrome iron ion double-doped complex selenium zinc sulfide laser material is Cr, Fe:ZnSxSe1-x, wherein x is not less than 0 and not more than 1. For the Cr and Fe transition metal ion energy band, the bandwidth is in a middle infrared wavelength range, the absorption and emission bandwidths are wide, the absorption and emission section areas are large, and ultrashort and ultrafast laser output with high peak power can be obtained. The Cr, Fe: ZnSSe laser material with excellent laser optical property can be subjected to LD (Laser Diode) direct pumping to manufacture an ultrafast laser device with low threshold, thus, the laser device is promoted to be more succinct and more miniature.