Dysprosium doped lead fluoride crystal and preparation method thereof

A technology of lead fluoride and crystal, which is applied in the field of dysprosium-doped lead fluoride crystal and its preparation, to achieve the effects of long fluorescence lifetime, large absorption and emission cross section, and low phonon energy

Inactive Publication Date: 2011-05-11
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dysprosium-doped lead fluoride crystals and their growth methods have not been reported yet.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dysprosium doped lead fluoride crystal and preparation method thereof
  • Dysprosium doped lead fluoride crystal and preparation method thereof
  • Dysprosium doped lead fluoride crystal and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Example 1: Growth of Dy by temperature gradient method 0.01 PbF 2.03 the crystal

[0018] The high-purity raw material DyF 3 and PbF 2 According to molecular formula Dy 0.01 PbF 2.03 The molar ratio is for the ingredients to be fully mixed evenly, dehydrated at 130°C for 12 hours, and the charging container is polytetrafluoroethylene. Take it out and press it into a block, put it into a graphite crucible, the growth atmosphere is argon, cover the top of the crucible, the temperature rises from 40°C / hour to 940°C for 6 hours, then grows crystals at a temperature of 5°C / hour, and the growth is over Then cool to room temperature at a cooling rate of 30°C / hour.

Embodiment 2

[0019] Example 2: Growth of Dy by temperature gradient method 0.05 PbF 2.15 the crystal

[0020] In this embodiment, the high-purity raw material DyF 3 and PbF 2 According to molecular formula Dy 0.05 PbF 2.15 For proportioning, the raw materials were dehydrated at 120°C for 14 hours and then put into a graphite crucible, and PbF was placed at the bottom of the crucible 2 The crystal is used as the seed crystal, and the growth atmosphere is CF 4 Protective gas, cover the top of the crucible, increase the temperature at 50°C / hour to 960°C for 3 hours, then grow crystals at a rate of 4°C / hour, and cool to room temperature at a rate of 40°C / hour after growth.

Embodiment 3

[0021] Example 3: Growth of Dy by temperature gradient method 0.1 PbF 2.3 the crystal

[0022] In this embodiment, the high-purity raw material DyF 3 and PbF 2 According to molecular formula Dy 0.1 PbF 2.3 For proportioning, the raw materials were dehydrated at 150°C for 10 hours and then put into a graphite crucible, and PbF was placed at the bottom of the crucible 2 The crystal is used as a seed crystal, the growth atmosphere is argon, the top of the crucible is covered, the temperature is raised to 980°C at a rate of 45°C / hour for 3 hours, and the temperature is reduced at 6°C / hour to grow the crystal. The cooling rate is to cool to room temperature.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a dysprosium doped lead fluoride crystal which has a molecular formula of DyxPbF2+3x, wherein x is the doping concentration of Dy<3+> and is equal to 0.1-10 mol percent. The crystal grows by adopting a melt method. A preparation method of the dysprosium doped lead fluoride crystal comprises the following steps of: 1, selecting the value of x, weighting the initial raw materials of DyF3 and PbF2 in a crystal growing formula according to the molecular formula of the DyxPbF2+3x in accordance with the stoichiometric proportion, wherein x=0.1-10 mol percent; and 2, uniformly mixing the weighted raw materials in the proportion, drying in vacuum and pressing into blocks, placing a graphite or platinum crucible, with a PbF2 crystal as a seed crystal, growing gases of atmosphere of argon or CF4 and the like. The dysprosium doped lead fluoride crystal has lower phonon energy, longer fluorescence lifetime and larger absorbing and transmitting section, and is possible to apply to an all-solid laser of 2-5mum waveband.

Description

technical field [0001] The invention relates to a laser crystal, in particular to a dysprosium-doped lead fluoride crystal and a preparation method thereof. Background technique [0002] The mid-infrared band from 2 to 5 μm covers H 2 O.CO 2 , CO, CH 4 It has several important molecular absorption bands such as HF and HF, so it has important applications in medicine, remote sensing, lidar and optical communication. 2μm laser, in view of its easy transmission in the atmosphere and safety to human eyes, 2μm laser is considered to be an ideal light source for medical and human eye safety detection systems, including medical surgery, atmospheric environment monitoring, laser radar, Important applications in photoelectric countermeasures, etc. 3-5μm is a window of the atmosphere. Lasers in this band have strong penetrating power to fog, smoke, etc., and the absorption of gas molecules and the scattering of suspended matter are small when transmitted at sea level. Since the G...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B11/00
Inventor 尹继刚杭寅何晓明张连翰赵呈春陈光珠胡鹏超弓娟李振毅
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap