Chromium-iron ion double-doped compound selenium zinc sulfide laser material and preparation method thereof

A laser material, zinc selenium sulfide technology, applied in the direction of luminescent materials, chemical instruments and methods, can solve the problem of complex pump source system, and achieve the effect of simplifying the system structure, wide laser spectrum, and wide light emission spectrum

Active Publication Date: 2015-09-16
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there is no suitable 2.7μm LD pump direct pump source, and the pump source system obtained by nonlinear optics is relatively complicated

Method used

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  • Chromium-iron ion double-doped compound selenium zinc sulfide laser material and preparation method thereof
  • Chromium-iron ion double-doped compound selenium zinc sulfide laser material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0027] Raw material ratio is carried out according to molecular formula, and Cr, Fe:ZnSe ceramics are prepared by hot pressing method, and x=0 is taken in raw material ratio. First, weigh the high-purity ZnSe powder according to the above ratio, mix it evenly, put it into a hot-press furnace for vacuum hot-press sintering, sinter at 900 degrees Celsius and 400MPa for 2-5 hours, and then slowly drop to room temperature. The ZnSe ceramics were taken out, the surface of the prepared ZnSe ceramics was polished, a mixed film of metal Cr and Fe was plated, and high-temperature diffusion annealing was performed at 850 degrees Celsius for 2 weeks under vacuum conditions to obtain high-quality Cr, Fe:ZnSe ceramics. Using the prepared Cr,Fe:ZnSe ceramics, process the coating, design the laser cavity, and use 1.7 micron LD pumps to obtain 70fs ultrafast laser output.

Embodiment 2

[0029] Preparation of Cr,Fe:ZnS by Chemical Vapor Deposition χ Se 1-χ For ceramics, take x=0.7% in the ratio of raw materials. First, the high-purity ZnS and ZnSe targets are made according to the above ratio, and at the same time, 0.1at% Fe ions and 0.2at% Cr ions are mixed into the targets, and Cr,Fe:ZnS is prepared by CVD method 0.7 Se 0.3 For polycrystalline ceramics, the prepared Cr,Fe:ZnSSe ceramics were subjected to hot isostatic pressing, and then subjected to high-temperature diffusion annealing at 1000 degrees Celsius for 1 week under vacuum conditions to obtain high-quality Cr,Fe:ZnSSe ceramics. The prepared Cr,Fe:ZnSSe ceramics are processed according to the Brewster angle, and the laser cavity is designed, and the 1.7 micron LD pump is used to obtain a 3-5 micron mid-infrared laser output. figure 2 is Cr 2+ and Fe 2+ Absorption spectra in ZnS, ZnSe and Cr, Fe ion double doped ZnSSe composite laser materials.

Embodiment 3

[0031] Cr,Fe:ZnS ceramics were prepared by chemical vapor deposition, and x=1 was taken in the ratio of raw materials. The experiment was carried out in a horizontal quartz tube reactor. The reaction furnace is divided into a zinc evaporation zone and a deposition zone, and is heated by resistance heating in three temperature zones. The raw material used is H 2 S gas and analytically pure Zn, and graphite as the substrate. h 2The flow of S gas is controlled by a rotameter, and the flow of Zn is controlled by adjusting the evaporation temperature of Zn. The prepared ZnS material was subjected to hot isostatic pressing treatment, the surface was polished and then coated with Fe and Cr metal films, and then the sample was annealed at a high temperature of 950 degrees Celsius for 2 weeks under vacuum conditions to obtain high-quality Cr, Fe:ZnS ceramics.

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Abstract

The invention discloses a chrome iron ion double-doped complex selenium zinc sulfide laser material and a preparation method thereof. The molecular formula of the chrome iron ion double-doped complex selenium zinc sulfide laser material is Cr, Fe:ZnSxSe1-x, wherein x is not less than 0 and not more than 1. For the Cr and Fe transition metal ion energy band, the bandwidth is in a middle infrared wavelength range, the absorption and emission bandwidths are wide, the absorption and emission section areas are large, and ultrashort and ultrafast laser output with high peak power can be obtained. The Cr, Fe: ZnSSe laser material with excellent laser optical property can be subjected to LD (Laser Diode) direct pumping to manufacture an ultrafast laser device with low threshold, thus, the laser device is promoted to be more succinct and more miniature.

Description

technical field [0001] The invention relates to a laser material, in particular to a chromium-iron ion double-doped composite selenium zinc sulfide laser material and a preparation method thereof. The chromium-iron ion double-doped composite selenium zinc sulfide laser material has a molecular formula of Cr,Fe:ZnS χ Se 1-χ , where the value range of x is: 0≤x≤1. Background technique [0002] Because the mid-infrared band (2-5μm) is located in the "molecular fingerprint area" and the "atmospheric window area" at the same time, the laser in this band is used in basic research, chemical remote sensing, infrared countermeasures (IRCM), lidar, infrared target simulation, and security. There are important applications in space communication and satellite communication (long wavelength is good for penetrating clouds and fog), environment and medical treatment. At present, the main ways to realize 2-5μm mid-to-far infrared solid-state laser are: difference frequency (DFG), optical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88B22F3/10B22F3/24
Inventor 姜本学张龙姜雄伟毛小建范金太
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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