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Transition metal doped zinc sulfide or zinc selenide planar waveguide material and preparation method

A planar waveguide and transition metal ion technology, applied in chemical instruments and methods, ceramic layered products, layered products, etc., can solve problems affecting output laser energy and repetition frequency, bursting of laser dielectric materials, and beam quality damage. Achieve good economic benefits and value, improve slope efficiency, and solve thermal effects

Active Publication Date: 2016-05-11
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The development of solid-state lasers is to reduce the thermal effect of the laser medium material to improve the output power and output beam quality. The laser medium material of the solid-state laser has changed from a rod shape to a slab shape, and the pumping source has changed from a lamp to a laser diode. The laser diode spectrum matches the laser medium absorption spectrum, so that the thermal effect of the laser medium material in the solid laser pumped by the laser diode is greatly reduced, but in the pump energy absorbed by the laser medium material, a large part of the light energy is still converted into Heat energy is deposited inside the medium, and heat dissipation requires cooling its surface, which causes temperature gradients and thermal stresses inside the laser medium material, which causes changes in the refractive index of the medium material, resulting in the existence of thermal effects, especially in high-power solid-state lasers The thermal effect of the laser medium material is extremely significant. On the one hand, this leads to the destruction of the beam quality, such as thermal lens effect, thermally induced birefringence depolarization, thermally induced wavefront distortion, etc. On the other hand, excessive thermal stress will even make the laser medium The material bursts, and the pump power density increases, which in turn affects the output laser energy and repetition rate.

Method used

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  • Transition metal doped zinc sulfide or zinc selenide planar waveguide material and preparation method
  • Transition metal doped zinc sulfide or zinc selenide planar waveguide material and preparation method

Examples

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Embodiment 1

[0022] Firstly, high optical quality (mid-infrared transmittance up to 72% or more, transition metal ion doping concentration up to ~10 18 / cm 3 ) Cr 2+ : ZnS ceramics, the thickness is 2 mm, YAG is clamped on both sides, put into a vacuum hot-press furnace, keep the temperature at 850 ° C, and the pressure at 3 tons / cm 2 Under the conditions of hot pressing and compounding, heat preservation and pressure for 30 minutes, high-quality YAG+Cr 2+ : Planar waveguide laser materials with ZnS+YAG sandwich composite structure.

Embodiment 2

[0024] Firstly, high optical quality (mid-infrared transmittance up to 72% or more, transition metal ion doping concentration up to ~10 18 / cm 3 ) of Fe 2+ : ZnSe ceramics, thickness 5 mm, sandwiched Al on both sides 2 o 3 , put in N 2 In a hot press furnace under gas protection, at a high temperature of 900 ° C and 4 tons / cm 2 Hot-compression compounding under certain pressure conditions, heat preservation and pressure for 40 minutes, to obtain high-quality Al 2 o 3 +Fe 2+ :ZnSe+Al 2 o 3 Planar waveguide laser materials with sandwich composite structure.

Embodiment 3

[0026] Firstly, high optical quality (mid-infrared transmittance up to 72% or more, transition metal ion doping concentration up to ~10 18 / cm 3 ) Co 2+ : ZnS ceramic, thickness 3 mm, sandwiched Al on both sides 2 o 3 , put in H 2 In a hot press furnace under gas protection, at a temperature of 950°C and a pressure of 3.5 tons / cm 2 Under the conditions of high temperature hot pressing and compounding, heat preservation and pressure holding for 50 minutes, high quality Al 2 o 3 +Co 2+ :ZnS+Al 2 o 3 Planar waveguide laser materials with sandwich composite structure.

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Abstract

The invention relates to a transition-metal-doped zinc sulfide or zinc selenide planar waveguide material and a preparation method. The transition-metal-doped zinc sulfide or zinc selenide planar waveguide material is characterized in that a YAG (yttrium aluminum garnet) or Al2O3 lath is respectively combined to two sides of transition-metal-ion-doped zinc sulfide or zinc selenide ceramic to form a sandwich planar waveguide structure, so that a heat-mirror effect of laser can be effectively controlled, and the intermediate infrared waveguide laser output is realized. By adopting the transition-metal-doped zinc sulfide or zinc selenide planar waveguide material, not only can the heat management be effectively realized by virtue of the sandwich composite structure, but also the mass production can be realized, and important significance on the development of a high-power laser technology and integrated optics can be realized.

Description

technical field [0001] The invention relates to a laser gain material, in particular to a transition metal ion-doped zinc sulfide or zinc selenide planar waveguide material and a preparation method. Background technique [0002] The mid-infrared (2-5μm) band is just in the two transmission windows of the atmosphere (1-3μm, 3-5μm), and it is also located in the "molecular fingerprint area" and the "atmospheric window area", and covers the characteristics of many important atmospheric molecules Spectral lines can be widely used in remote sensing, ranging, guidance, communication, infrared photoelectric countermeasures and interference, gas detection, spectral analysis and laser medical treatment, etc., occupying an important position in the infrared band light source. At present, the main ways to realize 2-5 μm mid-to-far infrared solid-state lasers are: difference frequency (DFG), optical parametric oscillation (OPO) and optical parametric amplification (OPA). These methods ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B18/00C04B37/00
CPCB32B18/00B32B33/00B32B2307/302C04B37/00
Inventor 姜本学彭雅珮张龙范金太毛小建
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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