Neodymium-doped lanthanum strontium aluminate tantalate laser crystal and process for preparing the same
A laser crystal, tantalic acid technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., to achieve the effects of good optical quality, large absorption and emission cross sections, and wide absorption bandwidth
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Embodiment 1
[0022] The preparation method of the Nd-doped lanthanum strontium aluminum tantalate laser crystal of the present invention comprises the following steps:
[0023] ① Select the value of x, according to the molecular formula (Nd x La (0.3-x) Sr 0.7 )(Al 0.65 Ta 0.35 )O 3 Weigh the raw materials according to the stoichiometric ratio, the initial raw materials are: La 2 o 3 , SrCO 3 , Al 2 o 3 , Ta 2 o 5 and Nd 2 o 3 , the chemical reaction equation of the preparation process is as follows:
[0024] ;
[0025] ②Mix the weighed raw materials evenly, press into tablets, put them in an alumina crucible, put them in a muffle furnace, and sinter at a constant temperature of 1200°C for more than ten hours;
[0026] ③The sintered Nd:(La,Sr)(Al,Ta)O 3 Put it into an iridium crucible, under the protection of inert gas, use (La,Sr)(Al,Ta)O in the direction 3 Single crystal is used as seed crystal, which is grown by medium frequency induction pulling method;
[0027...
Embodiment 2
[0030] Get x=0.1at.% in the raw material proportioning of present embodiment. La 2 o 3 (4N), SrCO 3 (4N), Al 2 o 3 (5N), Ta 2 o 5 (5N) and Nd 2 o 3 (5N) The high-purity raw material oxide powder is properly pre-dried in the air, then weighed strictly according to the stoichiometric ratio, mixed well, and pressurized into a block with a diameter slightly smaller than the inner diameter of the crucible. After pre-firing at high temperature for 15 hours, put it into an iridium crucible and start growing crystals. The crystal growth direction is , the crystal growth rate and crystal rotation rate are 2mm / h and 10rpm respectively, and the growth atmosphere is N 2 Protective atmosphere. The initial solid-liquid interface growth line is convex to the melt, so the faults and impurities are reduced, and the growth boundary line becomes flat later. In order to prevent crystal cracking, the temperature was lowered to room temperature at a rate of 100 °C / h after the growth. A ...
Embodiment 3
[0032] Get x=10at.% in the raw material proportioning of the present embodiment. La 2 o 3 (4N), SrCO 3 (4N), Al 2 o 3 (5N), Ta 2 o 5 (5N) and Nd 2 o 3 (5N) The high-purity raw material oxide powder is properly pre-dried in the air, then weighed strictly according to the stoichiometric ratio, mixed well, and pressurized into a block with a diameter slightly smaller than the inner diameter of the crucible. After pre-firing at high temperature for 20 hours, put it into an iridium crucible and start growing crystals. The crystal growth direction is , the crystal growth rate and crystal rotation rate are 1mm / h and 10rpm, respectively, and the growth atmosphere is Ar protective atmosphere. The initial solid-liquid interface growth line is convex to the melt, so the faults and impurities are reduced, and the growth boundary line becomes flat later. In order to prevent crystal cracking, the temperature was lowered to room temperature at a rate of 30 °C / h after the growth. A...
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