26 results about "Phonon energy" patented technology

The application provides a semiconductor laser element with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer. The application is characterized in that a topological phonon state layer with a multilayer structure is arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturation electron drift velocity distribution characteristics, the electron affinity energy distribution characteristics and the polarized optical phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes shift loss of the difference between the photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature quenching problem of the laser can be inhibited.

According to the gallium nitride-based semiconductor laser with the gradually-changed polarized optical phonon energy waveguide layer, a fitting curve of In ion strength distribution or In atom concentration distribution of an upper waveguide layer and a lower waveguide layer is tested through SIMS, and a fitting curve of polarized optical phonon energy distribution meets any function distribution of Log3P1, Lop2P2 and Biphase. The spatial continuous regulation and control of the phonon energy of the optical field are realized, so that the LO phonon energy is continuously and gradually changed along the propagation direction, the phonon energy gradient is formed, the LO phonon scattering is improved, the inelastic scattering and energy relaxation of carriers and LO phonons are inhibited, the carrier transportation and phonon scattering are optimized, the service life of the carriers and the gain retention time are prolonged, and the optical field performance is improved. According to the invention, the threshold current density is reduced, the thermal stability of the laser is improved, the use power and the use temperature of the laser are improved, meanwhile, the phonon energy valley value is matched with the quantum well gain peak, the scattering loss is inhibited, additional scattering caused by phonon energy mutation is avoided, the light field limitation is enhanced, and the slope efficiency is improved.

The application discloses a high-density Tb 3+ The application discloses a doped full-oxide germanate scintillation glass and a preparation method thereof. The scintillation glass comprises a matrix glass and a luminescent center. The matrix glass is composed of oxides, and specific components are GeO2-Al2O3-BaO-La2O3-Lu2O3-Gd2O3; and the luminescent center is a Tb 3+ The application does not involve Pb, Cd and other high-pollution heavy metals, is environment-friendly, does not contain B2O3, P2O5 and other substances with high phonon energy, and is beneficial to improving the luminescent efficiency of Tb 3+ The full-oxide scintillation glass is prepared by a melting quenching method, and has the characteristics of environment-friendliness and high density.

The application relates to the technical field of special optical material preparation, in particular to a full-solid-state three-clad zinc fluoride-based glass optical fiber and a preparation method thereof. The optical fiber comprises, from inside to outside, an optical fiber core layer, an optical fiber inner clad layer, an optical fiber middle clad layer and an outer clad layer; the optical fiber core layer, the optical fiber inner clad layer and the optical fiber middle clad layer are all zinc fluoride-based glass and have the same component types; the refractive index of the optical fiber core layer is greater than that of the optical fiber inner clad layer; the materials of the optical fiber core layer, the optical fiber inner clad layer and the optical fiber middle clad layer all comprise the following components: ZnF2, BaF2, GaF3, SrF2, LiF, YF3, LaF3, PbF2, NaF and 0-12 mol% of rare earth fluoride; and the material of the outer clad layer is polytetrafluoroethylene. The prepared optical fiber has the advantages of high transmittance, low phonon energy, small loss, stable structure, high mechanical strength, simple preparation process, good repeatability, suitability for mass production and application in the fields of communication and the like.

The invention provides a simulation method and system for sputtering a monocrystalline silicon target material based on a focused ion beam, and relates to the technical field of semiconductor material micro-nano machining, the method comprises the following steps: defining sputtering parameters including incident ion parameters, target material parameters and target material depth, and selecting an SRIM / TRIM calculation method; on the basis of the sputtering parameters, calculating an ion beam sputtering target material to generate distribution data; based on the distribution data, through integrated analysis of an integrated parameter optimization module and a damage evaluation model, the processing efficiency and the damage depth when the focused ion beam is used for processing the monocrystalline silicon target material are dynamically balanced; wherein the damage evaluation model selects sputtering parameters with the minimum defect influence and the etching efficiency higher than a preset threshold value by comparing defect density distribution, energy loss distribution and phonon energy loss distribution. Through a simulation framework based on the Monte Carlo method, collaborative optimization of parameters such as ion energy and target material thickness is realized, and the dynamic relationship between the sputtering yield and the damage depth is quantitatively analyzed.

The invention discloses a wide-spectrum low-coherence single-mode optical fiber light source based on synchronous emission of different upper energy levels and application. The wide-spectrum low-coherence single-mode optical fiber light source comprises a 1.55-micron nanosecond pulse optical fiber pumping source, a 1.5 / 2-micron optical fiber wavelength division multiplexer, a single-mode thulium-doped silica optical fiber, a cooling device and a single-mode output tail fiber. At the low temperature of liquid nitrogen, the quantum efficiency of emission of thulium ions 3H4-3H5 in the high-phonon-energy quartz glass is improved to nearly 100% from less than 10% at room temperature; under the pumping condition of a gain switch with a high pumping rate, synchronous emission with a nanosecond-level time difference is formed between 3H4-3H5 emission (2.3-micron wave band) and 3F4-3H6 emission (1.9-micron wave band) in the high-concentration single-mode thulium-doped silica fiber, and the two different upper energy level emission forms single transverse mode flat wide-spectrum low-coherence output with the bandwidth larger than 700 nanometers on the spectrum. The all-fiber light source is compact in structure and convenient to operate, and realizes gapless coverage in a wave band from 1.7 microns to 2.5 microns; the method can be applied to speckle-free imaging illumination, optical coherence tomography and the like.

The invention relates to tellurate glass for a temperature sensor and a preparation method of the tellurate glass, and belongs to the technical field of optical luminescent materials. TeO2, ZnO, ZnF2 and Gd2O3 are used as matrixes of the tellurate glass, Er2O3 and YbF3 are doped, and the preparation method comprises the following steps: grinding and heating the raw materials, annealing and polishing. The prepared tellurate glass has low phonon energy, high chemical stability, excellent thermal stability and high rare earth ion solubility. More importantly, a specific rare earth ion pair in the glass can generate two fluorescence emission peaks of which the intensity is sensitively changed along with the temperature under the pumping of a specific wavelength (such as 980nm), and high-precision temperature sensing can be realized by monitoring the fluorescence intensity ratio of the two fluorescence emission peaks. The preparation process is simple, the cost is low, and the obtained glass material has a wide application prospect in the field of non-contact optical temperature sensors.

This application discloses a fluorescent glass for mid-infrared emission and its preparation method, belonging to the field of optical materials technology. The method includes the following steps: S1, obtaining phosphor and sulfide glass powder respectively; S2, grinding the mixture containing phosphor and sulfide glass powder, pressing it into shape, and calcining it to obtain the fluorescent glass for mid-infrared emission. Combining the high brightness, wide color gamut, and high stability of phosphor with the low phonon energy and excellent mid-infrared transmittance of sulfide glass, this fluorescent glass can produce strong 2.65μm room temperature fluorescence output under 980nm laser pumping. The preparation method of this application can prepare fluorescent glass materials with a wide emission band in a short time and at a low cost. It is a simple and efficient method for synthesizing mid-infrared fluorescent glass and can expand the selection range of phosphors, resulting in significant economic benefits.

This invention proposes a gallium nitride-based semiconductor laser, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention incorporates a multi-layered, multi-vacancy electron-phonon modulation layer within the semiconductor laser element, defining the electron affinity distribution and polarization optical phonon energy distribution characteristics of each multi-vacancy electron-phonon modulation layer. This forms single-vacancy, vacancy cluster, and multi-vacancy modulated electron-phonon structures, localizing electron-phonons between the lower confinement layer and the lower waveguide layer. This reduces the Stokes shift caused by the photon energy difference between the pump light and the oscillating light, reduces heat loss from phonon vibration and phonon transport, improves the heat dissipation of the laser element, mitigates interlayer thermal mismatch, suppresses the thermal lensing effect and stress birefringence effect of the laser, improves laser beam distortion and depolarization, and enhances the laser beam quality factor.

This invention discloses an S+C+L band ultra-wideband gain active optical fiber. The fiber comprises, from the inside out, an inner core layer, an inner cladding layer, a core layer, a loose layer, and a cladding layer. The inner core layer is doped with Tm ions, the inner cladding layer is doped with fluorine (F), the core layer is doped with Er ions, and the loose layer is doped with Bi, Al, and P ions. In the fiber structure, the Tm ions in the inner core layer are completely encapsulated by the F-formed inner cladding, placing the Tm ions in a low phonon energy environment provided by F, thus improving its S-band luminous efficiency. The core layer is encapsulated by the loose layer and the inner cladding, blocking the contact between Er ions in the core layer and Tm ions in the inner core layer, reducing the energy transfer probability, minimizing the interaction between Tm and Er ions, and improving the luminous efficiency of Er and Tm ions in the S, C, and L bands.

There is provided a photonics device including: a doped material including an oxide host hosting a system of ytterbium oxide and network modifiers, containing above 0.5×1026 ions / m3 of ytterbium; a laser pump directed to the doped material; and the lifetime of an excited state of the ytterbium in response to the laser pump is of above 0.9 ms and a phonon energy of the host material is above 1000 cm−1.

The present disclosure discloses an S+C+L band ultra-wideband gain-active optical fiber, including sequentially from the inner to outer layers: an inner core layer, an inner cladding layer, a core layer, a porous layer, and a cladding layer. The inner core layer is doped with Tm ions, the inner cladding layer is doped with F elements, the core layer is doped with Er ions, and the porous layer is doped with Bi, Al, and P ions. In the fiber structure, the Tm ions in the inner core layer are completely enveloped by the inner cladding layer formed by F elements, placing the Tm ions in a low phonon energy environment provided by the F elements, thereby enhancing their luminescence efficiency in the S-band.

The invention discloses a near-infrared second-region excited single rare earth ion doped up-conversion luminescent material and a preparation method thereof.The near-infrared second-region excited single rare earth ion doped up-conversion luminescent material comprises a hexagonal-phase NaYF4 main body structure with low phonon energy and Er < 3 + > ions serving as a sensitizing agent and an activating agent, the molar content of the Er < 3 + > ions is 12.5%, the molar content of the NaYF4 main body structure is 12.5%, and the molar content of the Er < 3 + > ions is 12.5%. According to the invention, the redistribution of energy transition in a luminescence mechanism is caused by the design of a simple core-shell structure and the change of doped ion concentration, so that multicolor luminescence is realized, and the defects of doping of multiple ions and complex structural design in the prior art are overcome.

The present invention discloses a germanate transparent glass-ceramic, wherein the main crystal phase of the germanate transparent glass-ceramic is a rare earth fluoride, and the main crystal phase is uniformly distributed in a residual glass phase. The preparation method of the germanate transparent glass-ceramic comprises: uniformly mixing the components of the germanate transparent glass-ceramic to obtain a mixed material; melting the mixed material at 1300-1550°C and holding the mixture for 10-150 minutes to obtain a glass melt; quenching the glass melt into a shape, and then annealing the glass melt at 200-450°C for 2-24 hours to obtain a glass precursor; holding the glass precursor at 450-650°C for 4-60 hours and then naturally cooling the glass precursor to obtain the germanate transparent glass-ceramic. The present invention also discloses applications of the germanate transparent glass-ceramic. The germanate transparent glass-ceramic provided by the present invention has the advantages of a wide transmittance range, low phonon energy, high refractive index, high hardness, high transparency, and suitability for rare earth upconversion luminescence.

The invention relates to the technical field of warehouse management, and discloses an intelligent component warehouse management system and method based on digital twinning, and the system comprises a stress management unit, a conduction management unit, a change management unit, a compensation management unit and a twinning management unit. Time domain-frequency domain cross characteristics of temperature and humidity data and vibration data can be accurately captured, the non-linear interaction of multiple physical fields and a lattice distortion management graph generated by a conduction management unit are prevented from being omitted, the distortion risk of a quantum dot active area can be recognized in advance, a phonon energy management spectrum of each quantum dot generated by a change management unit, and the quantum dot active area distortion risk can be recognized in advance. According to the quantum dot laser, the dynamic change of lattice distortion can be tracked, the spectral shape compensation signal, generated by the compensation management unit, of the reverse direction of each quantum dot can be offset, the central wavelength drift and the twin management instruction generated by the twin management unit can be offset, management lag can be avoided, the damage probability of the quantum dot laser is reduced, and the warehouse management reliability is improved.

According to the gallium nitride-based semiconductor laser with the gradually-changed longitudinal phonon rate waveguide layer, a fitting curve of In ion strength distribution or In atom concentration distribution of an upper waveguide layer and a lower waveguide layer is tested through an SIMS, a fitting curve of the longitudinal phonon rate meets any function distribution of Allometric2, Allometric1, BiPhasic and FreundichEXT, and the longitudinal phonon rate of the upper waveguide layer and the lower waveguide layer meets any function distribution of the Allometric2, the Allometric1, the BiPhasic and the FreundichEXT. The upper waveguide layer, the lower waveguide layer and the longitudinal (perpendicular to a quantum well surface) phonon group velocity and phonon energy gradient are regulated and controlled, directional management of phonon transportation and scattering is achieved, smooth transition of phonon group velocity is achieved through the gradually-changed longitudinal phonon velocity structure of the upper waveguide layer and the lower waveguide layer, interface reflection and back scattering are reduced, and the quantum efficiency is improved. And thirdly, mismatch between phonon energy and quantum well energy level difference is reduced, resonance scattering is reduced, the carrier relaxation rate is reduced, differential gain is improved, accumulation of high-energy phonons in a waveguide layer and a quantum well is inhibited, and heat reversal current is improved.

The present application relates to a kind of europium doped germanate red fluorescent powder and preparation method, and europium doped germanate red fluorescent powder is prepared from lithium carbonate, sodium carbonate, germanium oxide and europium oxide, and the molar ratio of raw material is 1:1:8:(0.025 to 0.1), and the structural formula is LiNaGe4O9:xEu 3+ The preparation method is to add solid-phase reaction raw materials to ethanol to grind, and dry precursor mixed powder is obtained by natural air drying in air;The precursor mixed powder is placed in a tube furnace, heated to 800 DEG C at 5 DEG C / min, and calcined for 8 hours;After the product is naturally cooled to room temperature with the tube furnace, the finished product is obtained by grinding, the present application provides an asymmetric coordination environment using the flexible network structure of germanium-oxygen tetrahedron, reduces the matrix phonon energy through the strong covalence of germanium-oxygen bond, suppresses non-radiative transition and concentration quenching by combining the doping concentration within the defined interval, and improves the quantum efficiency and red light emission intensity of fluorescent powder.

The invention provides a rare earth ion double-doped calcium lanthanum borate laser crystal and a preparation method and application thereof, and belongs to the technical field of laser crystals. The calcium lanthanum borate crystal with high phonon energy is used as a rare earth doped matrix, rare earth ions Dy < 3 + > and auxiliary doped rare earth ions Re < 3 + > (rare earth ions except Dy < 3 + > and La < 3 + >) are doped in the rare earth doped matrix, and relaxation of energy level particles under laser to a ground state energy level is accelerated through a cross relaxation phenomenon of the auxiliary doped rare earth ions and Dy < 3 + >. The rare earth ion double-doped calcium lanthanum borate laser crystal provided by the invention can be used as a yellow laser gain medium to output stable yellow laser, and can also convert the yellow laser into ultraviolet laser with double frequency, so that simultaneous output or switching output of the yellow laser and the ultraviolet laser can be realized.

A rare earth ion and thorium co-doped LaAlO3 perovskite type laser crystal, by doping thorium ions in LaAlO3 crystal, rhombic domain is single domain, and single domain crystal without scattering along the laser direction is obtained. ‑1 LaAlO3 crystal has lower phonon energy (486cm ‑1 K ‑1 ), larger thermal conductivity (13.6Wm -1 K -1 ), after Nd and Th co-doping, the fluorescence lifetime of Nd is up to 317us, which is the longest in current oxide laser crystal. The crystal growth method provided by the application can grow high-quality single crystal with single domain, and as a gain medium, can produce large energy nanosecond pulse laser, which has great application in many fields such as industry, scientific research, national defense and medicine.

The present invention discloses a high-crystallinity twin-phase glass-ceramic scintillator and its preparation method and application, belonging to the technical field of solid luminescent materials. The present invention uses SiO2, Al2O3, BaO, and CaF2 as components, and externally dopes TbF3 to prepare a uniform mixed batch, heats to form a glass melt, and then rapidly cools and forms it, and heat-treats it to obtain the glass-ceramic scintillator. Through component design, the present invention in-situ precipitates BaAl2Si2O8 and CaF2 twin-phases in fluorine-oxygen glass, and its crystallinity is as high as 96.01% as confirmed by X-ray diffraction spectrum measurement. The glass-ceramic scintillator contains a large amount of crystal phases of rare earth luminescent ions Tb 3+ It provides a low phonon energy environment, which is beneficial to reducing the probability of its non-radiative transition and improving the luminescence efficiency under X-ray excitation; when the glass-ceramic scintillator is used as an X-ray imaging scintillator material, it has suitable luminescence properties, which can solve the problems of low light yield and poor imaging sensitivity of most existing glass-ceramic scintillators, and the preparation process is simple, which is suitable for large-scale industrial production.

This invention proposes a nitride semiconductor light-emitting diode (LED), comprising, from bottom to top, a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor. The quantum well is a periodic structure composed of a well layer and a barrier layer. A p-type contact layer is disposed above the p-type semiconductor. The p-type contact layer exhibits saturated electron drift velocity distribution characteristics, effective light hole mass distribution characteristics, deformation potential distribution characteristics, and polarized optical phonon energy distribution characteristics. This invention can enhance hole transport and conduction in the p-type contact layer, improve the lateral and longitudinal expansion capabilities of holes in the p-type contact layer, and improve the surge capability and human body mode electrostatic discharge (HBD) immunity of the LED. The HBD immunity is improved from a pass rate of over 90% for 100–200V to over 90% for 200–500V.

The application relates to the technical field of warehouse management, and discloses an intelligent component warehouse management system and method based on digital twinning, which comprises a stress management unit, a conduction management unit, a change management unit, a compensation management unit and a twinning management unit. The stress management tensor generated by the stress management unit can accurately capture the time-domain-frequency-domain cross characteristics of temperature and humidity data and vibration data, avoids missing the nonlinear interaction of multiple physical fields, the lattice distortion management graph generated by the conduction management unit can identify the distortion risk of a quantum dot active region in advance, the phonon energy management spectrum of each quantum dot generated by the change management unit can track the dynamic change of lattice distortion, the spectrum shape compensation signal generated by the compensation management unit in the reverse direction of each quantum dot can offset the central wavelength drift, and the twinning management instruction generated by the twinning management unit can avoid management lag, reduce the damage probability of a quantum dot laser, and improve the reliability of warehouse management.

This invention relates to a cerium ion-doped high-entropy fluoride scintillation crystal, its preparation method, and its applications. The preparation method involves using single crystal particles or powders of LaF3, GdF3, CaF2, SrF2, BaF2, and CeF3 as raw materials, doping them with Ce ions, grinding them uniformly to obtain a matrix material, vacuuming, and then performing high-temperature sintering to ensure complete matrix material solidification and impurity removal. The material is then slowly cooled to allow crystal growth, reaching room temperature to obtain the cerium ion-doped high-entropy fluoride scintillation crystal. The chemical formula of the high-entropy fluoride scintillation crystal is Ce:M1M2CaSrBaF2. 12 Where M1 and M2 are any two of Y, Lu, Gd, La, Lu, Sc, and Ce. Compared with the prior art, the LaGdCaSrBaF prepared by this invention... 12 High-entropy crystals possess lower phonon energies and smaller 5d level splitting, which can significantly reduce Ce. 3+ The probability of nonradiative transitions to the 5d energy level of ions decreases. Furthermore, the disordered distribution of mixed crystals allows for the modulation of Ce at the atomic, molecular, and group scales. 3+ The local coordination structure of ions allows them to achieve true disorder.

The invention provides a semiconductor laser element with a topological phonon state layer. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the topological phonon state layers of a multi-layer structure are arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturated electron drift rate distribution characteristic, the electron affinity distribution characteristic and the polarized optical phonon energy distribution characteristic of each topological phonon state layer are designed; according to the invention, the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes frequency shift loss of the photon energy difference between the pump light and the oscillation light can be reduced, and the thermal stress and temperature quenching problems of the laser can be inhibited.

The invention discloses a mid-infrared three-wavelength laser crystal material and a preparation method and application thereof, and belongs to the field of inorganic functional crystal materials. The chemical formula of the intermediate infrared three-wavelength laser crystal material is KDyYGdF10. And the crystal is grown by adopting a Bridgman method. The laser crystal material has ultra-wide-band absorption and emission performance, can realize light emission in the middle-infrared band of 2500-3300 nm and the middle-infrared band of 4100-4400 nm under pumping of 1277 nm, and has peak wavelengths of 2849 nm, 4235 nm and 4273 nm respectively. The laser crystal material has the characteristics of low phonon energy, low melting point, same-component melting and the like, the absorption wavelength of the laser crystal material is matched with that of a commercial Nd: YAG laser pumping source, the absorption peak intensity is high, the absorption of pump light by the crystal is facilitated, so that fluorescence emission with peak wavelengths of 2849 nm, 4235 nm and 4273 nm in a middle-infrared band is realized, and the laser crystal material is a middle-infrared laser crystal material with great application potential.

The present application relates to a kind of deuterated organic semiconductor photocatalyst, it is deuterated polymer 2,4,5,6-tetrakis (9-carbazolyl) -m-dicyanobenzene.The beneficial effects of the present application are: the present application uses isotope substitution to modulate phonon effect and carrier dynamics process in photocatalytic process, provides a distinctive method for realizing efficient semiconductor photocatalysis.By deuterated carbazole replacing carbazole, deuterated carbazole-cyanobenzene conjugated polymer is synthesized, due to the replacement of hydrogen by deuterium, C-D bond stretching and bending energy is weakened, the phonon energy of catalyst is reduced, the non-radiative decay process of carrier is effectively inhibited, the carrier lifetime of deuterated sample is longer, the separation efficiency of photo-generated electron and hole is significantly improved, which leads to higher visible light catalytic decomposition of water hydrogen generation rate, to the effect of improving catalyst activity.