9 results about "Phonon energy" patented technology

The application provides a semiconductor laser element with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer. The application is characterized in that a topological phonon state layer with a multilayer structure is arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturation electron drift velocity distribution characteristics, the electron affinity energy distribution characteristics and the polarized optical phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes shift loss of the difference between the photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature quenching problem of the laser can be inhibited.

According to the gallium nitride-based semiconductor laser with the gradually-changed polarized optical phonon energy waveguide layer, a fitting curve of In ion strength distribution or In atom concentration distribution of an upper waveguide layer and a lower waveguide layer is tested through SIMS, and a fitting curve of polarized optical phonon energy distribution meets any function distribution of Log3P1, Lop2P2 and Biphase. The spatial continuous regulation and control of the phonon energy of the optical field are realized, so that the LO phonon energy is continuously and gradually changed along the propagation direction, the phonon energy gradient is formed, the LO phonon scattering is improved, the inelastic scattering and energy relaxation of carriers and LO phonons are inhibited, the carrier transportation and phonon scattering are optimized, the service life of the carriers and the gain retention time are prolonged, and the optical field performance is improved. According to the invention, the threshold current density is reduced, the thermal stability of the laser is improved, the use power and the use temperature of the laser are improved, meanwhile, the phonon energy valley value is matched with the quantum well gain peak, the scattering loss is inhibited, additional scattering caused by phonon energy mutation is avoided, the light field limitation is enhanced, and the slope efficiency is improved.

The application relates to the technical field of special optical material preparation, in particular to a full-solid-state three-clad zinc fluoride-based glass optical fiber and a preparation method thereof. The optical fiber comprises, from inside to outside, an optical fiber core layer, an optical fiber inner clad layer, an optical fiber middle clad layer and an outer clad layer; the optical fiber core layer, the optical fiber inner clad layer and the optical fiber middle clad layer are all zinc fluoride-based glass and have the same component types; the refractive index of the optical fiber core layer is greater than that of the optical fiber inner clad layer; the materials of the optical fiber core layer, the optical fiber inner clad layer and the optical fiber middle clad layer all comprise the following components: ZnF2, BaF2, GaF3, SrF2, LiF, YF3, LaF3, PbF2, NaF and 0-12 mol% of rare earth fluoride; and the material of the outer clad layer is polytetrafluoroethylene. The prepared optical fiber has the advantages of high transmittance, low phonon energy, small loss, stable structure, high mechanical strength, simple preparation process, good repeatability, suitability for mass production and application in the fields of communication and the like.

This invention proposes a gallium nitride-based semiconductor laser, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention incorporates a multi-layered, multi-vacancy electron-phonon modulation layer within the semiconductor laser element, defining the electron affinity distribution and polarization optical phonon energy distribution characteristics of each multi-vacancy electron-phonon modulation layer. This forms single-vacancy, vacancy cluster, and multi-vacancy modulated electron-phonon structures, localizing electron-phonons between the lower confinement layer and the lower waveguide layer. This reduces the Stokes shift caused by the photon energy difference between the pump light and the oscillating light, reduces heat loss from phonon vibration and phonon transport, improves the heat dissipation of the laser element, mitigates interlayer thermal mismatch, suppresses the thermal lensing effect and stress birefringence effect of the laser, improves laser beam distortion and depolarization, and enhances the laser beam quality factor.

There is provided a photonics device including: a doped material including an oxide host hosting a system of ytterbium oxide and network modifiers, containing above 0.5×1026 ions / m3 of ytterbium; a laser pump directed to the doped material; and the lifetime of an excited state of the ytterbium in response to the laser pump is of above 0.9 ms and a phonon energy of the host material is above 1000 cm−1.

According to the gallium nitride-based semiconductor laser with the gradually-changed longitudinal phonon rate waveguide layer, a fitting curve of In ion strength distribution or In atom concentration distribution of an upper waveguide layer and a lower waveguide layer is tested through an SIMS, a fitting curve of the longitudinal phonon rate meets any function distribution of Allometric2, Allometric1, BiPhasic and FreundichEXT, and the longitudinal phonon rate of the upper waveguide layer and the lower waveguide layer meets any function distribution of the Allometric2, the Allometric1, the BiPhasic and the FreundichEXT. The upper waveguide layer, the lower waveguide layer and the longitudinal (perpendicular to a quantum well surface) phonon group velocity and phonon energy gradient are regulated and controlled, directional management of phonon transportation and scattering is achieved, smooth transition of phonon group velocity is achieved through the gradually-changed longitudinal phonon velocity structure of the upper waveguide layer and the lower waveguide layer, interface reflection and back scattering are reduced, and the quantum efficiency is improved. And thirdly, mismatch between phonon energy and quantum well energy level difference is reduced, resonance scattering is reduced, the carrier relaxation rate is reduced, differential gain is improved, accumulation of high-energy phonons in a waveguide layer and a quantum well is inhibited, and heat reversal current is improved.

A rare earth ion and thorium co-doped LaAlO3 perovskite type laser crystal, by doping thorium ions in LaAlO3 crystal, rhombic domain is single domain, and single domain crystal without scattering along the laser direction is obtained. ‑1 LaAlO3 crystal has lower phonon energy (486cm ‑1 K ‑1 ), larger thermal conductivity (13.6Wm -1 K -1 ), after Nd and Th co-doping, the fluorescence lifetime of Nd is up to 317us, which is the longest in current oxide laser crystal. The crystal growth method provided by the application can grow high-quality single crystal with single domain, and as a gain medium, can produce large energy nanosecond pulse laser, which has great application in many fields such as industry, scientific research, national defense and medicine.

The application relates to the technical field of warehouse management, and discloses an intelligent component warehouse management system and method based on digital twinning, which comprises a stress management unit, a conduction management unit, a change management unit, a compensation management unit and a twinning management unit. The stress management tensor generated by the stress management unit can accurately capture the time-domain-frequency-domain cross characteristics of temperature and humidity data and vibration data, avoids missing the nonlinear interaction of multiple physical fields, the lattice distortion management graph generated by the conduction management unit can identify the distortion risk of a quantum dot active region in advance, the phonon energy management spectrum of each quantum dot generated by the change management unit can track the dynamic change of lattice distortion, the spectrum shape compensation signal generated by the compensation management unit in the reverse direction of each quantum dot can offset the central wavelength drift, and the twinning management instruction generated by the twinning management unit can avoid management lag, reduce the damage probability of a quantum dot laser, and improve the reliability of warehouse management.

This invention relates to a cerium ion-doped high-entropy fluoride scintillation crystal, its preparation method, and its applications. The preparation method involves using single crystal particles or powders of LaF3, GdF3, CaF2, SrF2, BaF2, and CeF3 as raw materials, doping them with Ce ions, grinding them uniformly to obtain a matrix material, vacuuming, and then performing high-temperature sintering to ensure complete matrix material solidification and impurity removal. The material is then slowly cooled to allow crystal growth, reaching room temperature to obtain the cerium ion-doped high-entropy fluoride scintillation crystal. The chemical formula of the high-entropy fluoride scintillation crystal is Ce:M1M2CaSrBaF2. 12 Where M1 and M2 are any two of Y, Lu, Gd, La, Lu, Sc, and Ce. Compared with the prior art, the LaGdCaSrBaF prepared by this invention... 12 High-entropy crystals possess lower phonon energies and smaller 5d level splitting, which can significantly reduce Ce. 3+ The probability of nonradiative transitions to the 5d energy level of ions decreases. Furthermore, the disordered distribution of mixed crystals allows for the modulation of Ce at the atomic, molecular, and group scales. 3+ The local coordination structure of ions allows them to achieve true disorder.