Patents
Literature
Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.

2 results about "Phonon energy" patented technology

Phonon, in condensed-matter physics, a unit of vibrational energy that arises from oscillating atoms within a crystal.

All-solid-state triple-clad zinc fluoride-based glass optical fiber and method for manufacturing the same

The application relates to the technical field of special optical material preparation, in particular to a full-solid-state three-clad zinc fluoride-based glass optical fiber and a preparation method thereof. The optical fiber comprises, from inside to outside, an optical fiber core layer, an optical fiber inner clad layer, an optical fiber middle clad layer and an outer clad layer; the optical fiber core layer, the optical fiber inner clad layer and the optical fiber middle clad layer are all zinc fluoride-based glass and have the same component types; the refractive index of the optical fiber core layer is greater than that of the optical fiber inner clad layer; the materials of the optical fiber core layer, the optical fiber inner clad layer and the optical fiber middle clad layer all comprise the following components: ZnF2, BaF2, GaF3, SrF2, LiF, YF3, LaF3, PbF2, NaF and 0-12 mol% of rare earth fluoride; and the material of the outer clad layer is polytetrafluoroethylene. The prepared optical fiber has the advantages of high transmittance, low phonon energy, small loss, stable structure, high mechanical strength, simple preparation process, good repeatability, suitability for mass production and application in the fields of communication and the like.
Owner:HARBIN ENG UNIV +1

A gallium nitride-based semiconductor laser

This invention proposes a gallium nitride-based semiconductor laser, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention incorporates a multi-layered, multi-vacancy electron-phonon modulation layer within the semiconductor laser element, defining the electron affinity distribution and polarization optical phonon energy distribution characteristics of each multi-vacancy electron-phonon modulation layer. This forms single-vacancy, vacancy cluster, and multi-vacancy modulated electron-phonon structures, localizing electron-phonons between the lower confinement layer and the lower waveguide layer. This reduces the Stokes shift caused by the photon energy difference between the pump light and the oscillating light, reduces heat loss from phonon vibration and phonon transport, improves the heat dissipation of the laser element, mitigates interlayer thermal mismatch, suppresses the thermal lensing effect and stress birefringence effect of the laser, improves laser beam distortion and depolarization, and enhances the laser beam quality factor.
Owner:GEN SEMICONDUCTOR (ANHUI) CO LTD