Method for preparing nano-micrometer lacunaris SiGe thermoelectric material

A technology of silicon germanium alloy and germanium alloy, applied in the field of thermoelectric semiconductor materials, can solve the problems of complex process, high production cost, large equipment investment, etc., and achieve the effect of simple process and low cost

Inactive Publication Date: 2008-01-23
UNIV OF SCI & TECH BEIJING
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem is that the thermoelectric conversion efficiency is low
[0004] In addition, it is generally believed that only by chemical vapor deposition or ion beam sputtering can it be possible to obtain materials with quantum wells, line and dot structures. Compared with simple physical vapor deposition methods, these methods have large investment in equipment and complicated processes. , high production cost, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nano-micrometer lacunaris SiGe thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] 1) Silicon-germanium alloy (Si-germanium) with high conductivity and oxide film protection 1-x Ge x (x=0)) is the raw material;

[0027] 2) Thoroughly clean the silicon-germanium alloy sheet with detergent, deionized water and ultrasonic method respectively. The cleaning steps are as follows:

[0028] (1) Clean the silicon-germanium alloy sheet with detergent and deionized water,

[0029] (2) Clean with ultrasonic wave (built-in deionized water) for 20 minutes, the ultrasonic frequency is 20KHz;

[0030] 3) The silicon-germanium alloy sheet is corroded for the first time by electrochemical corrosion, and the current density is 10mA / cm 2 , the corrosion time is 0.5 minutes, the corrosion solution is composed of hydrofluoric acid with a concentration of 10%, and then thoroughly cleaned with deionized water in an ultrasonic environment with a condition of 20KHz for 35 minutes;

[0031] 4) Dry the cleaned silicon-germanium alloy sheet quickly with a hot air blower and p...

Embodiment 2

[0040] 1) Silicon-germanium alloy (Si-germanium) with high conductivity and oxide film protection 1-x Ge x (x=0.35)) is raw material;

[0041] 2) Thoroughly clean the silicon-germanium alloy sheet with detergent, deionized water and ultrasonic method respectively. The cleaning steps are as follows:

[0042] (1) Clean the silicon-germanium alloy sheet with detergent and deionized water,

[0043] (2) Clean with ultrasonic wave (built-in deionized water) for 25 minutes, the ultrasonic frequency is 25KHz;

[0044] 3) The silicon-germanium alloy sheet is corroded for the first time by electrochemical corrosion, and the current density is 20mA / cm 2 , the corrosion time is 10 minutes, the corrosion solution is composed of hydrofluoric acid with a concentration of 15%, and then thoroughly cleaned with deionized water in an ultrasonic environment with a condition of 20KHz for 30 minutes;

[0045] 4) Dry the cleaned silicon-germanium alloy sheet quickly with a hot air blower and pla...

Embodiment 3

[0054] 1) Silicon-germanium alloy (Si-germanium) with high conductivity and oxide film protection 1-x Ge x (x=0.05)) is raw material;

[0055] 2) Thoroughly clean the silicon-germanium alloy sheet with detergent, deionized water and ultrasonic method respectively. The cleaning steps are as follows:

[0056] (1) Clean the silicon-germanium alloy sheet with detergent and deionized water,

[0057] (2) Clean with ultrasonic wave (built-in deionized water) for 23 minutes, the ultrasonic frequency is 25KHz;

[0058] 3) The silicon-germanium alloy sheet is corroded for the first time by electrochemical corrosion, and the current density is 10-30mA / cm 2 , the corrosion time is 20 minutes, the corrosion solution is composed of hydrofluoric acid with a concentration of 20%, and then thoroughly cleaned with deionized water in an ultrasonic environment with a condition of 20KHz for 30 minutes;

[0059] 4) Dry the cleaned silicon-germanium alloy sheet quickly with a hot air blower and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for making a nano-micro meter multi holes germanium-silicon alloy pyroelectric material. The invention involve the preparation of nano-micro meter multi holes germanium-silicon alloy chips that contain silicon of nanometer size, In, InSb or Sb quantum wire or points. The silicon of nanometer and germanium-silicon quantum wires can be prepared by exploiting electrochemical corrosion, physical vapor phase deposition and secondary chemical corrosion. The multi holes germanium-silicon alloy metal chip comprises In, InSb or Sb and the general weight percentage of them is less than 2%; it has quantized structure of real-hollow combination for separating the actions of electrons and acoustic phonon and improving pyroelectricity property.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric (thermoelectric) semiconductor materials, and in particular provides a method for preparing a nano-microporous silicon-germanium alloy thermoelectric material, which involves nanoscale Si, Ge, In, InSb or Sb quantum wires or dots Nano-microporous silicon-germanium alloy sheets (Si 1-x Ge x (x=0-0.35))). Background technique [0002] The thermoelectric materials that have been practically used since the 1950s are all semiconductor materials. Among them, there is a problem that the thermoelectric conversion efficiency is low. Scientists have done a lot of research work to improve the conversion efficiency of thermoelectric materials, but there has been no major progress. The dimensionless figure of merit (ZT) of thermoelectric materials has been hovering around 1, until the 1990s represented by American scientists Apply solid quantum theory to the research of thermoelectric materials and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34
Inventor 徐桂英赵志远吴晓峰
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap