Acoustic wave resonator adopting multiple layers of coupled phononic crystals

A technology of acoustic wave resonators and phononic crystals, applied in the field of acoustic wave resonators, can solve the problems of increased volume of phononic crystals, localization of sound waves, and weakening of the enhancement effect of sound pressure amplification, and achieve high sound pressure amplification , strong sound wave localization effect, small volume effect

Pending Publication Date: 2017-08-25
STATE GRID JIANGXI ELECTRIC POWER CO LTD RES INST +1
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Problems solved by technology

However, increasing the number of scatterers means that the overall volume of the phononic crystal increases. In addition, as the number of scat

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  • Acoustic wave resonator adopting multiple layers of coupled phononic crystals
  • Acoustic wave resonator adopting multiple layers of coupled phononic crystals
  • Acoustic wave resonator adopting multiple layers of coupled phononic crystals

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Embodiment Construction

[0024] The present invention is further explained in detail below in conjunction with the accompanying drawings.

[0025] Such as figure 1 and figure 2 As shown, the acoustic wave resonator using a multi-layer coupled phononic crystal structure is nested by the first layer of phononic crystal 1, the second layer of phononic crystal 2, the third layer of phononic crystal 3, and the fourth layer of phononic crystal 4. become. Such as figure 1 and Figure 3-6 As shown, the first layer of phononic crystal 1 is placed in the cavity 2-5 of the second layer of phononic crystal 2, and the second layer of phononic crystal 2 is placed in the cavity 3-9 of the third layer of phononic crystal 3 , the third layer of phononic crystals 3 is placed in the cavity 4-17 of the fourth layer of phononic crystals 4 .

[0026] The first layer of phononic crystal 1 includes scatterers 1-1, 1-2, ..., 1-8 and cavities 1-9, and the scatterers 1-1, 1-2, ..., 1-8 are arranged in a 3×3 array . The ...

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Abstract

The invention belongs to the field of acoustic functional devices, and discloses an acoustic wave resonator adopting multiple layers of coupled phononic crystals. The acoustic wave resonator is formed by a plurality of two-dimensional phononic crystals with different scattering body sizes and different crystal lattice coefficients in a nested manner. From the inside out, the first layer of phononic crystals is formed by a 3*3 scattering body array with the center being a single-point vacancy defect, the second layer of phononic crystals is formed by a 2*2 scattering body array, the third layer of phononic crystals is formed by a 3*3 scattering body array with the center being a single-point vacancy defect, and the fourth layer of phononic crystals is formed by a 5*5 scattering body array with the center being a multi-point vacancy defect. The acoustic wave resonator can realize efficient detection and capture for weak acoustic waves; compared with a single phononic crystal with the same volume, the multiple layers of coupled phononic crystals have a stronger acoustic wave localization effect and a higher acoustic pressure amplification factor.

Description

technical field [0001] The invention belongs to the field of novel acoustic functional devices, and in particular relates to an acoustic wave resonator adopting multi-layer coupled phononic crystals, which is used to realize efficient detection, induction and capture of weak sound waves. Background technique [0002] As a new type of artificial synthetic material or structure, phononic crystals are used to design and develop sound insulation and noise reduction materials due to their unique acoustic bandgap characteristics (for example: Chinese invention patents CN104389935A, CN104141722A, CN104538019A, etc.). In addition, recent related studies have shown that the passband characteristics of phononic crystals contain rich physical effects, among which the acoustic localization effect has attracted extensive attention. Because the acoustic wave localization effect has the characteristics of acoustic wave capture and sound pressure amplification, it can be used to develop aco...

Claims

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Application Information

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IPC IPC(8): G01H17/00H03H9/02
CPCH03H9/02062H03H9/02637
Inventor 杨爱超
Owner STATE GRID JIANGXI ELECTRIC POWER CO LTD RES INST
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