Back-contacted solar cells with integral conductive vias and method of making
a solar cell and integral technology, applied in the field of back contact solar cells, can solve the problem of photocurrent loss in heavily doped emitters
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[0027] Note that in the drawings, the thicknesses of the various layers of insulating, semiconducting, and metallic materials, and other dimensions, such as the width of contact pads, are not drawn to scale, but rather are shown schematically for purposes of illustration and easy identification.
[0028] In the specification and claims, processes referred to as “thermomigration” include any gradient-driven migration process, including thermomigration and electromigration.
[0029]FIG. 1A shows a schematic cross-section side view of a first example of a back-contacted silicon solar cell, according to the present invention. Back-contacted solar cell 10 comprises a p-type bulk silicon substrate 12; a front side n+ diffusion emitter layer 14 located on the front side 11 of substrate 12; a back side n+ diffusion emitter layer 15 located on the back side 13 of substrate 12; a n-gridline negative ohmic contact 20 located on the back side 13 of substrate 12, contacting back side emitter layer 1...
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