Embodiments include a method comprising depositing a
hard mask layer over a first layer, the
hard mask layer including; lower
hard mask layer, hard
mask stop layer, and upper hard
mask. The hard
mask layer and the first layer are patterned and a spacer deposited on the patterned sidewall. The upper hard
mask layer and top portion of the spacer are removed by selective
etching with respect to the hard mask stop layer, the remaining spacer material extending to a first predetermined position on the sidewall. The hard mask stop layer is removed by selective
etching with respect to the lower hard
mask layer and spacer. The first hard
mask layer and top portion of the spacer are removed by selectively
etching the lower hard mask layer and the spacer with respect to the first layer, the remaining spacer material extending to a second predetermined position on the sidewall.