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122results about How to "Limit voltage" patented technology

Open drain driver, and a switch comprising the open drain driver

An open drain driver (7) selectively switches a MOSFET switch (MN1) which is passively held in the conducting state into the non-conducting state. The MOSFET switch (MN1) switches an AC analogue input signal on a main input terminal (3) to a main output terminal (4) and the gate of the MOSFET switch (MN1) is AC coupled by a capacitor (C1) to the drain thereof. The open drain driver (7) comprises a first MOSFET (MN2) and a second MOSFET (MN3) through which the gate of the MOSFET switch (MN1) is pulled to ground (Vss). The gate of the first MOSFET (MN2) is coupled to the supply voltage (VDD) for maintaining the first MOSFET (MN2) in the open state. A control signal is applied to the gate of the second MOSFET (MN3) for selectively operating the open drain driver (7) in the conducting state for operating the MOSFET switch (MN1) in the non-conducting state. When the second MOSFET (MN3) is in the non-conducting state, the first MOSFET (MN2) remains in the conducting state until the voltage on a coupling node (9) between the first and second MOSFETs (MN2,MN3) equals the difference between its gate voltage and its threshold voltage, at which stage, any over-voltages applied to the gate of the MOSFET switch (MN1) are divided between the first and second MOSFETs (MN2,MN3). A coupling diode (D1) coupling the coupling node (9) to the supply voltage (VDD) clamps the voltage on the coupling node (9) at the supply voltage (VDD) plus the conducting voltage of the diode (D1), in the event of the voltage on the coupling node (9) rising after the first MOSFET (MN2) has gone into the non-conducting state. The coupling node (9) may be capacitively coupled to the supply voltage (VDD) by a coupling capacitor instead of or as well as the diode (D1) for limiting the voltage on the coupling node (9).
Owner:ANALOG DEVICES INC

RFID tags with shielding structure for incorporation into microwavable food packaging

RFID tags are provided for incorporation into the packaging of a microwavable food item, with the RFID tag being configured to be safely microwaved. The RFID tag includes an antenna defining a gap and configured to operate at a first frequency. An RFID chip is electrically coupled to the antenna across the gap. A shielding structure is electrically coupled to the antenna across the gap and overlays the RFID chip. The shielding structure includes a shield conductor and a shield dielectric at least partially positioned between the shield conductor and the RFID chip. The shielding structure is configured to limit the voltage across the gap when the antenna is exposed to a second frequency that is greater than first frequency. In additional embodiments, RFID tags are provided for incorporation into the packaging of a microwavable food item, with the RFID tag being configured to be safely microwaved. The RFID tag includes an RFID chip and an antenna electrically coupled to the RFID chip. The antenna may have a sheet resistance in the range of approximately 100 ohms to approximately 230 ohms, optionally with an optical density in the range of approximately 0.18 to approximately 0.29. Alternatively, or additionally, the antenna may be configured to fracture into multiple pieces upon being subjected to heating in a microwave oven. Alternatively, or additionally, the RFID tag may be incorporated in an RFID label that is secured to the package by a joinder material with a greater resistance than that of the antenna, such as a sheet resistance in the range of approximately 100 ohms to approximately 230 ohms.
Owner:AVERY DENNISON CORP

High-voltage protection circuitry in a data access arrangement

InactiveUS6876742B1Negative efficiencySuccessfully and economically withstand surge voltageTwo-way loud-speaking telephone systemsSubstations coupling interface circuitsData accessPeak value
A data access arrangement (DAA) having improved surge protection. The DAA incorporates a high voltage clamping device functioning to protect line side circuitry from signal paths created by EMI capacitors. In one embodiment of the invention, EMI capacitors are added between the “plus” and “minus” terminals of the diode bridge of the DAA to balance and reduce noise injection onto the TIP and RING lines. These EMI capacitors also reduce EMI interference. However, by adding EMI capacitors on this side (the “rectified side” or “line side”) of the diode bridge, a high voltage signal path to earth ground is created that may have deleterious effects on the line side circuitry. To effectively negate undesirable signal paths through the EMI capacitors, the DAA includes a high voltage clamping device (e.g., a MOV, SIDACTor™, gas discharge tube or similar device) disposed between the plus and minus terminals of the diode bridge for suppressing high voltage spikes. The high voltage clamping device limits the voltage seen by the line side circuitry as a result of high voltage longitudinal surges by providing a current path from the plus terminal to the minus terminal of the diode bridge, thereby effectively bypassing the line side circuitry. The present invention recognizes and takes advantage of the fact that the diodes of a typical diode bridge are capable of withstanding the peak currents associated with most voltage surges.
Owner:SKYWORKS SOLUTIONS INC
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