A method for producing a plurality of
semiconductor chips, particularly
radiation-emitting
semiconductor chips, each having at least one epitaxially produced functional
semiconductor layer stack, comprising the following method steps:preparing a growth substrate
wafer (1) substantially comprised of semiconductor material from a semiconductor
material system that is with respect to lattice parameters the same as or similar to that on which a semiconductor layer sequence for the functional semiconductor layer stack is based,forming in the growth substrate
wafer (1) a separation zone (4) disposed parallel to a main face (100) of the growth substrate
wafer (1),joining the growth substrate wafer (1) to an auxiliary carrier wafer (2),detaching along the separation zone (4) a portion (11) of the growth substrate wafer (1) that faces away from the auxiliary carrier wafer (2) as viewed from the separation zone (4),forming on the portion (12) of the growth substrate wafer remaining on the auxiliary carrier wafer (2) a growth surface for subsequent epitaxial growth of a semiconductor layer sequence,epitaxially growing the semiconductor layer sequence (5) on the growth surface,applying a
chip substrate wafer to the semiconductor layer sequence,detaching the auxiliary carrier wafer (2), andsingulating the composite composed of the semiconductor layer sequence and the
chip substrate wafer (7) into mutually separate semiconductor chips.