Integrated circuit structure
A technology of integrated circuits and gate electrodes, which is applied in the structure and formation of fin field effect transistors, can solve the problems of high substrate leakage current, achieve the effects of reducing junction area, optimizing work function, and increasing driving current
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0037] Embodiments of the present invention are enumerated below and described in detail with accompanying drawings. The elements and designs of the following embodiments are for the purpose of simplifying the disclosed inventions, but are not intended to limit the present invention.
[0038] The present invention proposes a novel embodiment of a fin field effect transistor and its method of formation, and describes the intermediate fabrication steps in the manufacture of this embodiment, and also discusses various variations of the embodiment shown in the embodiment and drawings, similar components are identified using similar reference numerals.
[0039] See image 3, forming an integrated circuit. The integrated circuit structure includes a substrate 20, which may be a silicon substrate, a germanium substrate, or a substrate formed of other semiconductor materials. The substrate 20 can be doped with p-type or n-type impurities. Isolation regions, such as shallow trench ...
PUM
Property | Measurement | Unit |
---|---|---|
Work function | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com