Tunneling field effect transistor having heterogeneous grid work function and formation method thereof

Abstract

The invention provides a tunneling field effect transistor having heterogeneous grid work function, which comprises a substrate, a channel zone formed in the substrate, a source zone and a drain zone formed at two sides of the channel zone, and a grid stack, wherein the doping type of the source zone is opposite to that of the drain zone; the grid stack comprises a grid dielectric layer and further comprises a first grid electrode and a second grid electrode located on the grid dielectric layer and distributed along the direction from the source zone to the drain zone, and a first side wall and a second side wall located on the grid dielectric layer and respectively formed at a side of the first grid electrode and a side of the second grid electrode; and the first grid electrode and the second grid electrode have different work functions. In the embodiment of the invention, a structure of transverse heterogeneous grid work function is introduced to the tunneling field effect transistor, so the energy zone distribution of the channel zone is adjusted, the sub-threshold gradient of the transistor is substantially decreased, meanwhile, the driving current is greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor design and manufacture, in particular to a tunneling field effect transistor with a heterogeneous gate work function and a forming method thereof. Background technique [0002] For a long time, in order to obtain higher chip density, faster working speed and lower power consumption, the feature size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been continuously scaled down, and has now entered the nanoscale scope. However, a serious challenge that comes with it is the appearance of short-channel effects, such as subthreshold voltage drop (Vt roll-off), drain-induced barrier lowering (DIBL), and source-drain punch through (punch through), etc. , making the off-state leakage current of the device significantly increased, resulting in performance degradation. [0003] At present, in order to reduce the negative impact brought by the short channel effect, various improveme...

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Problems solved by technology

[0006] The shortcoming of prior art is that the performance of TFET device still needs to be improved

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