Tunnelling field effect transistor based on work function of heterogeneous gate and forming method of tunnelling field effect transistor

A technology of tunneling field effect and work function, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems that the performance of TFET devices needs to be improved, and achieve the reduction of sub-threshold slope, easy implementation, and improved drive The effect of current

Active Publication Date: 2013-03-27
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The shortcoming of prior art is that the performance of TFET device still needs to be improved

Method used

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  • Tunnelling field effect transistor based on work function of heterogeneous gate and forming method of tunnelling field effect transistor
  • Tunnelling field effect transistor based on work function of heterogeneous gate and forming method of tunnelling field effect transistor
  • Tunnelling field effect transistor based on work function of heterogeneous gate and forming method of tunnelling field effect transistor

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Embodiment Construction

[0040] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0041] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicat...

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Abstract

The present disclosure provides a tunneling device, which comprises: a substrate (1100); a channel region (1300) formed in the substrate, and a source region (1500) and a drain region (1400) formed on two sides of the channel region (1300); and a gate stack (1600) formed on the channel region (1300) and a first side wall (1910) and a second side wall (1920) formed on two sides of the gate stack (1600), wherein the gate stack (1600) comprises: a first gate dielectric layer (1631); at least a first gate electrode (1610) and a second gate electrode (1620) formed on the first gate dielectric layer (1631); a second gate dielectric layer (1632) formed between the first gate electrode (1610) and the first side wall (1910); and a third gate dielectric layer (1633) formed between the second gate electrode (1620) and the second side wall (1920).

Description

technical field [0001] The invention relates to the technical field of semiconductor design and manufacture, in particular to a tunneling field effect transistor based on heterogeneous gate work function and a forming method thereof. Background technique [0002] For a long time, in order to obtain higher chip density, faster working speed and lower power consumption, the feature size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been continuously scaled down, and has now entered the nanoscale scope. However, a serious challenge that comes with it is the appearance of short-channel effects, such as subthreshold voltage drop (Vt roll-off), drain-induced barrier lowering (DIBL), and source-drain punch through (punch through), etc. , making the off-state leakage current of the device significantly increased, resulting in performance degradation. [0003] At present, in order to reduce the negative impact brought by the short channel effect, various improve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/43H01L21/336H01L21/28
CPCH01L21/26586H01L29/7391
Inventor 崔宁梁仁荣王敬许军
Owner TSINGHUA UNIV
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