IGZO thin film transistor and method for improving electrical property of IGZO thin film transistor

Abstract

The invention provides an IGZO thin film transistor and a method for improving the electrical property of the IGZO thin film transistor. The method comprises the following steps that a semiconductor structure is provided, the semiconductor structure comprises a substrate, a metal gate is formed on part of the surface of the substrate, and the metal gate and the upper surface of the substrate are respectively covered with a gate oxide layer; an IGZO film layer is manufactured to cover the gate oxide layer, the IGZO film layer is etched to form an active layer and a pixel electrode area, and a source electrode, a drain electrode and a passivation layer are formed above the IGZO film layer in sequence; after the IGZO film layer is etched to form the active layer, the surface of the IGZO film layer is treated through a plasma treatment process. The IGZO film layer is treated through oxygen plasma and UV radiation, the oxygen content of an IGZO film is improved, lattice imperfections between the IGZO film and the gate oxide layer are reduced, meanwhile, impurities and defects on the surface of the IGZO film can be removed, and device performance is improved.

Description

technical field [0001] The invention relates to the field of display screen manufacture, in particular to an IGZO thin film transistor and a method for improving the electrical performance of the IGZO thin film transistor. Background technique [0002] IGZO (indium gallium zinc oxide) is the abbreviation of indium gallium zinc oxide. Amorphous IGZO material is a channel layer material used in the new generation of thin film transistor technology and is a kind of metal oxide (Oxied) panel technology. IGZO material was first proposed by Hideo Hosono of Tokyo Institute of Technology in Japan to be applied in the TFT industry. [0003] Using IGZO technology can make the power consumption of the display screen close to that of OLED, but the cost is lower, the thickness is only 25% higher than that of OLED, and the resolution can reach full HD (full HD, 1920*1080P) or even ultra high definition (Ultra Definition, Resolution 4k*2k) level. [0004] IGZO is currently a very popular...

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Problems solved by technology

[0007] However, in the IGZO film prepared by this patent, there may be more oxygen vacancy defects in the film, which may easily lead to the leakage current phenomenon. At the same time, the source, drain and passivation layer are directly prepared after the IGZO film is prepared. The impurities and defects existing on the surface of the IGZO film are treated, which affects the Schottky contact of the metal between the IGZO film and the source and drain, and generally reduces the performance of the device.

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